High mobility in GaN MOSFETs with AlSiO gate dielectric and AlN mobility enhancement layer

2021 ◽  
Author(s):  
Matthew Smith ◽  
Yosuke Kajiwara ◽  
Hiroshi Ono ◽  
Po-Chin Huang ◽  
Daimotsu Kato ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
High Mobility ◽  
Enhancement Layer

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO2 Gate Dielectric

2018 ◽  
Vol 924 ◽  
pp. 482-485
Author(s):  
Min Seok Kang ◽  
Kevin Lawless ◽  
Bong Mook Lee ◽  
Veena Misra
Keyword(s):  
Threshold Voltage ◽  
Interfacial Layer ◽  
Field Effect ◽  
Lanthanum Oxide ◽  
Gate Dielectric ◽  
High Mobility ◽  
High Threshold ◽  
Field Effect Mobility ◽  
The Impact ◽  
Lanthanum Silicate

We investigated the impact of an initial lanthanum oxide (La2O3) thickness and forming gas annealing (FGA) conditions on the MOSFET performance. The FGA has been shown to dramatically improve the threshold voltage (VT) stability of 4H-SiC MOSFETs. The FGA process leads to low VTshift and high field effect mobility due to reduction of the interface states density as well as traps by passivating the dangling bonds and active traps in the Lanthanum Silicate dielectrics. By optimizing the La2O3interfacial layer thickness and FGA condition, SiC MOSFETs with high threshold voltage and high mobility while maintaining minimal VTshift are realized.

scholarly journals High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric

Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 852 ◽  
Author(s):  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Sung Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Linear Type ◽  
Channel Layer ◽  
Indium Gallium

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric

2003 ◽  
Author(s):  
Huiling Shang ◽  
H. Okorn-Schmidt ◽  
K.K. Chan ◽  
M. Copel ◽  
J.A. Ott ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
High Mobility

A polymer gate dielectric for high-mobility polymer thin-film transistors and solvent effects

2004 ◽  
Vol 85 (15) ◽  
pp. 3283-3285 ◽  
Author(s):  
Joonhyung Park ◽  
S. Young Park ◽  
Sang-Oak Shim ◽  
Hyewon Kang ◽  
Hong H. Lee
Keyword(s):  
Thin Film ◽  
Solvent Effects ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Polymer Thin Film

Engineering gate dielectric surface properties for enhanced polymer field-effect transistor performance

2015 ◽  
Vol 3 (47) ◽  
pp. 12267-12272 ◽  
Author(s):  
Yanlian Lei ◽  
Bo Wu ◽  
Wing-Kin Edward Chan ◽  
Furong Zhu ◽  
Beng S. Ong
Keyword(s):  
Surface Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
High Mobility ◽  
Dielectric Surface ◽  
Effect Transistor

A high-performance “hybrid” dual-silane SAM enables the attainment of both a high mobility and on/off ratio, together with other desirable FET properties.

scholarly journals Impact of the Gate Dielectric on Contact Resistance in High‐Mobility Organic Transistors

2019 ◽  
Vol 5 (5) ◽  
pp. 1800723 ◽  
Author(s):  
Alexandra F. Paterson ◽  
Alexander D. Mottram ◽  
Hendrik Faber ◽  
Muhammad R. Niazi ◽  
Zhuping Fei ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Gate Dielectric ◽  
High Mobility ◽  
Organic Transistors

High Mobility Strained Ge MOSFETs with high-k gate dielectric on Si

2006 ◽  
Author(s):  
J.P. Donnelly ◽  
D.Q. Kelly ◽  
S. Joshi ◽  
S. Dey ◽  
D. Shahrjerdi ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
High Mobility ◽  
High K ◽  
High K Gate Dielectric

High mobility strained Ge PMOSFETs with high- gate dielectric and metal gate on Si substrate

2008 ◽  
Vol 44 (3) ◽  
pp. 240 ◽  
Author(s):  
J.P. Donnelly ◽  
D.Q. Kelly ◽  
D.I. Garcia-Gutierrez ◽  
M. José-Yacamán ◽  
S.K. Banerjee
Keyword(s):  
Gate Dielectric ◽  
High Mobility ◽  
Si Substrate ◽  
Metal Gate
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