High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3as gate dielectric

2010 ◽  
Vol 43 (44) ◽  
pp. 442001 ◽  
Author(s):  
D X Xia ◽  
J B Xu
2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jeong ◽  
Joo Kim ◽  
Hansol Yang ◽  
Jaeyoung Jang

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.


2015 ◽  
Vol 107 (10) ◽  
pp. 103302 ◽  
Author(s):  
Amit Tewari ◽  
Srinivas Gandla ◽  
Anil Reddy Pininti ◽  
K. Karuppasamy ◽  
Siva Böhm ◽  
...  

2009 ◽  
Vol 1196 ◽  
Author(s):  
Yoshihide Fujisaki ◽  
Tatsuya Takei ◽  
Yoshiki Nakajima ◽  
Hiroto Sato ◽  
Mitsunori Suzuki ◽  
...  

AbstractWe have demonstrated a 5-inch flexible color liquid crystal display (LCD) and organic light emitting display (OLED) driven by low-voltage operation organic TFT. In order to achieve high-quality and high-resolution moving images, OTFTs with high performances such as a high mobility, high ON/OFF ratio, low sub-threshold slope (SS) and low operating voltage, are developed. We fabricated pentacene-based low-voltage operation OTFT with a Ta2O5 gate dielectric prepared at a low temperature process. The resulting OTFT array showed a high mobility of 0.3-0.4 cm2/Vs, ON/OFF ratio over 107, VTH=2.7V, and low SS=0.3 V/decade. OTFTs with solution-processable materials such as fluoropolymer gate dielectric and liquid-crystalline semiconducting polymers, PBTTT, were also investigated. Electrical characteristics and stabilities of these devices will be discussed. In the final section, we will demonstrate OTFT-driven flexible displays. Both of the flexible LC device and the OLED device were successfully integrated on the pentacene-based OTFT arrays. Printing and lamination techniques were introduced to assemble the flexible LC device. Phosphorescent polymer materials, which can be patterned by ink-jet printing, were used for emitting layer of OLED. Color moving images were successively shown on the resulting 5-inch displays using an active-matrix driving technique of the OTFT at a low driving voltage of 15V.


2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.


2018 ◽  
Vol 924 ◽  
pp. 482-485
Author(s):  
Min Seok Kang ◽  
Kevin Lawless ◽  
Bong Mook Lee ◽  
Veena Misra

We investigated the impact of an initial lanthanum oxide (La2O3) thickness and forming gas annealing (FGA) conditions on the MOSFET performance. The FGA has been shown to dramatically improve the threshold voltage (VT) stability of 4H-SiC MOSFETs. The FGA process leads to low VTshift and high field effect mobility due to reduction of the interface states density as well as traps by passivating the dangling bonds and active traps in the Lanthanum Silicate dielectrics. By optimizing the La2O3interfacial layer thickness and FGA condition, SiC MOSFETs with high threshold voltage and high mobility while maintaining minimal VTshift are realized.


Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 852 ◽  
Author(s):  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Sung Park ◽  
Yong-Hoon Kim

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.


Author(s):  
Huiling Shang ◽  
H. Okorn-Schmidt ◽  
K.K. Chan ◽  
M. Copel ◽  
J.A. Ott ◽  
...  

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