Thermal stability of Ti and Pt nanowires manufactured by Ga+ focused ion beam

AbstractPt nanowires have been produced by FIB deposition of Pt thin films in a commercial Ga+ focused ion beam (FIB) system, followed by cross-sectional sputtering to form electron transparent Pt nanowires. The thermal stability of amorphous FIB manufactured Pt wires has been investigated by in-situ thermal cycling in a TEM. The Pt wires are stable up to 580-650°C where partial crystallization is observed in vacuum. Facetted nanoparticles grow on the wire surface, growing into free space by surface diffusion and minimising contact area with the underlying wire. The particles are fcc Pt with some dissolved Ga. Continued heating results in particle spheroidization, coalescence and growth, retaining the fcc structure.

Download Full-text

Sputtered Cu Films Containing Various Insoluble Substances for Advanced Barrierless Metallization

Materials Science Forum ◽

10.4028/www.scientific.net/msf.539-543.3497 ◽

2007 ◽

Vol 539-543 ◽

pp. 3497-3502 ◽

Cited By ~ 2

Author(s):

J.P. Chu ◽

C.H. Lin

Keyword(s):

Thermal Stability ◽

Leakage Current ◽

Focused Ion Beam ◽

Ion Beam ◽

The Other ◽

Oxide Semiconductor ◽

Good Thermal Stability ◽

Cu Films ◽

Pure Cu ◽

Thermal Stability Of

Sputtered Cu films containing various insoluble substances, such as Cu(W2.3), Cu(Mo2.0), Cu(Nb0.4), Cu(C2.1) and Cu(W0.4C0.7), are examined in this study. These films are prepared by magnetron sputtering, followed by thermal annealing. The crystal structure, microstructure, SIMS depth-profiles, leakage current, and resistivity of the films are investigated. Good thermal stability of these Cu films is confirmed with focused ion beam, X-ray diffractometry, SIMS, and electrical property measurements. After annealing at 400°C, obvious drops in resistivity, to ~3.8 μ-cm, are seen for Cu(W) film, which is lower than the other films. An evaluation of the leakage current characteristic from the SiO2/Si metal-oxide-semiconductor (MOS) structure also demonstrates that Cu with dilute tungsten is more stable than the other films studied. These results further indicate that the Cu(W) film has more thermal stability than the Cu(Mo), Cu(Nb), Cu(C), Cu(WC) and pure Cu films. Therefore, the film is suitable for the future barrierless metallization.

Download Full-text

Silver Metallization with Reactively Sputtered TiN Diffusion Barrier Films

MRS Proceedings ◽

10.1557/proc-812-f8.3 ◽

2004 ◽

Vol 812 ◽

Cited By ~ 3

Author(s):

L. Gao ◽

J. Gstöttner ◽

R. Emling ◽

Ch. Linsmeier ◽

M. Balden ◽

...

Keyword(s):

Thermal Stability ◽

Sheet Resistance ◽

Diffusion Barrier ◽

Photoelectron Spectroscopy ◽

Focused Ion Beam ◽

Ion Beam ◽

Electrical Measurement ◽

Silver Layer ◽

X Ray ◽

Thermal Stability Of

AbstractThe physical and electrical properties as well as thermal stability of reactively sputtered titanium nitride (TiN) film serving as a diffusion barrier was studied for silver (Ag) metallization. The thermal stability of Ag/TiN metallizations on Si with 12-nm-thick TiN barriers, as-deposited and after annealing at 300-650°C in N2/H2 for 30 min, was investigated with sheet resistance measurement, X-ray diffraction, focused ion beam-scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. According to electrical measurement no change of sheet resistance was found after annealing at 600°C, but an abrupt rise appeared at 650°C annealing. There are two causes by which the Ag/TiN/Si structure became degraded. One is agglomeration of the silver layer, and the other is oxidation and diffusion which are also associated problems during thermal annealing.

Download Full-text

Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

MRS Proceedings ◽

10.1557/proc-514-191 ◽

1998 ◽

Vol 514 ◽

Cited By ~ 1

Author(s):

M. F. Wu ◽

A. Vantomne ◽

S. Hogg ◽

H. Pattyn ◽

G. Langouche ◽

...

Keyword(s):

Thermal Stability ◽

Ion Beam ◽

Hexagonal Structure ◽

Orthorhombic Structure ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

Good Crystalline Quality ◽

Ion Beam Synthesis ◽

Thermal Stability Of

ABSTRACTThe Nd-disilicide, which exists only in a tetragonal or an orthorhombic structure, cannot be grown epitaxially on a Si(111) substrate. However, by adding Y and using channeled ion beam synthesis, hexagonal Nd0.32Y0.68Si1.7 epilayers with lattice constant of aepi = 0.3915 nm and cepi = 0.4152 nm and with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3 % respectively) are formed in a Si(111) substrate. This shows that the addition of Y to the Nd-Si system forces the latter into a hexagonal structure. The epilayer is stable up to 950 °C; annealing at 1000 °C results in partial transformation into other phases. The formation, the structure and the thermal stability of this ternary silicide have been studied using Rutherford backscattering/channeling, x-ray diffraction and transmission electron microscopy.

Download Full-text

Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2016.10.049 ◽

2017 ◽

Vol 62 ◽

pp. 192-195 ◽

Cited By ~ 2

Author(s):

Tuan T. Tran ◽

Hemi H. Gandhi ◽

David Pastor ◽

Michael J. Aziz ◽

J.S. Williams

Keyword(s):

Thermal Stability ◽

Ion Beam ◽

Tin Alloys ◽

Germanium Tin ◽

Ion Beam Synthesis ◽

Thermal Stability Of

Download Full-text

Implant isolation of ZnO epitaxial layers

MRS Proceedings ◽

10.1557/proc-744-m3.5 ◽

2002 ◽

Vol 744 ◽

Author(s):

S. O. Kucheyev ◽

C. Jagadish ◽

J. S. Williams ◽

P. N. K. Deenapanray ◽

Mitsuaki Yano ◽

...

Keyword(s):

Thermal Stability ◽

Single Crystal ◽

Sheet Resistance ◽

Annealing Temperature ◽

Ion Beam ◽

Irradiation Temperature ◽

Minor Effect ◽

Electrical Isolation ◽

Atomic Displacements ◽

Thermal Stability Of

ABSTRACTThe formation of highly resistive films of single-crystal ZnO as a result of irradiation with MeV Li, O, and Si ions is demonstrated. Results show that the ion doses necessary for electrical isolation close-to-inversely depend on the number of ion-beam-generated atomic displacements. Results show that an increase in the dose of 2 MeV O ions (up to ∼ 2 orders of magnitude above the threshold isolation dose) and irradiation temperature (up to 350 °C) has a relatively minor effect on the thermal stability of electrical isolation, which is limited to temperatures of ∼ 300 — 400 °C. For the case of multiple-energy implantation with keV Cr, Fe, or Ni ions, the evolution of sheet resistance with annealing temperature is consistent with defect-induced isolation, with a relatively minor effect of Cr, Fe, or Ni impurities on the thermal stability of isolation. Based on these results, the mechanism for electrical isolation in ZnO by ion bombardment is discussed.

Download Full-text