Liquid Precursor Route for Hetero-epitaxy of Zr(Y)O2 Thin Films on (001) Cubic Zirconia

Thin films of ZrO2-Al2O3 were grown on cubic-Zr(Y)O2 substrates by a liquid precursor route. Phase formation and epitaxy of these films was studied as a function of heat-treatment temperature and time. The following sequence of phases was observed in these thin films: Precursor → t-(Zr,Al)O2 → t-(Zr,Al)O2 + γ-(Al,Zr)2O3 → m-ZrO2 + α-Al2O3 Observations strongly suggest that the epitaxial process initiated before the metastable, single phase t-(Zr, Al)O2 partitioned to t-(Zr, Al)O2 + γ-(Al, Zr)2O3. Observations at 1400 °C show that, after the γ to α transformation, α-Al2O3, grains develop an elongated, prismatic morphology and an epitaxial relation with the underlying and surrounding m-ZrO2. The phase that is chemically and structurally similar to the substrate, in this case t-(Zr,Al)O2, or m-ZrO2, forms an epitaxial layer between the substrate and isolated, prismatic grains of heteroepitaxial α-Al2O3.

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Nanoparticle precursor route to low‐temperature spray deposition of CdTe thin films

Applied Physics Letters ◽

10.1063/1.115094 ◽

1995 ◽

Vol 67 (15) ◽

pp. 2176-2178 ◽

Cited By ~ 29

Author(s):

Martin Pehnt ◽

Douglas L. Schulz ◽

Calvin J. Curtis ◽

Kim M. Jones ◽

David S. Ginley

Keyword(s):

Thin Films ◽

Low Temperature ◽

Spray Deposition ◽

Precursor Route ◽

Cdte Thin Films

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Vapor deposition of parylene-F using hydrogen as carrier gas

Journal of Materials Research ◽

10.1557/jmr.1999.0036 ◽

1999 ◽

Vol 14 (1) ◽

pp. 246-250 ◽

Cited By ~ 4

Author(s):

D. Mathur ◽

G-R. Yang ◽

T-M. Lu

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Device Fabrication ◽

New Method ◽

Silicon Substrates ◽

Microelectronic Device ◽

Precursor Method ◽

Liquid Precursor ◽

Carrier Gas ◽

Liquid Precursors

A new method for depositing parylene-F (PA-F) thin films on silicon substrates has been explored. Hydrogen has been used as a carrier gas along with liquid precursors, dibromotetrafluoro-p-xylene and 1,4-bis(trifluoromethyl)benzene, to deposit PA-F. The properties of this film have been compared with the films obtained by the Gorham dimer method and the liquid precursor method using FTIR, XPS, and XRD. The PA-F films deposited by the dimer or liquid precursor acquired some kind of microcrystallinity on annealing. However, the PA-F films deposited in the presence of hydrogen were amorphous on annealing. This property could be potentially exploited for application in microelectronic device fabrication.

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Formation of Complex Non-Equilibrium Morphologies of Calcite via Biomimetic Processing

MRS Proceedings ◽

10.1557/proc-774-o6.7 ◽

2003 ◽

Vol 774 ◽

Cited By ~ 3

Author(s):

Yi-yeoun Kim ◽

Laurie B. Gower

Keyword(s):

Thin Films ◽

Local Solution ◽

Ion Concentration ◽

Mineralization Process ◽

Liquid Precursor ◽

Inorganic Composites ◽

Biomimetic Approach ◽

Biomimetic Processing ◽

Over Time ◽

Non Equilibrium

AbstractOur biomimetic approach for fabricating organic-inorganic composites with structures similar to biominerals is based on a novel mineralization process, called the Polymer-Induced-Liquid-Precursor (PILP) process. This process enables the deposition of non-equilibrium mineral morphologies of calcite under low-temperature and aqueous-based conditions [1], including patterned thin films of calcite. We have recently found that when a surplus of acidic polymer is added, the patterned mineral films act as a secondary template for directing new crystal outgrowths, which form into complex morphologies of calcite with time, such as fibrous mats and “horsetails”. Two interdependent factors, the polymer and Ca-ion concentration, which change the local solution environment over time, appear to modulate the creation of these different structures. Such observations may provide clues for unraveling the long-standing mystery of how biological systems fabricate their sophisticated and complex morphologies.

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Single solid source precursor route to the synthesis of MOCVD Cu-Cd-S thin films

Materials Research Express ◽

10.1088/2053-1591/ab413a ◽

2019 ◽

Vol 6 (10) ◽

pp. 106442 ◽

Cited By ~ 1

Author(s):

B Olofinjana ◽

A C Adebisi ◽

F O Efe ◽

O Fasakin ◽

K O Oyedotun ◽

...

Keyword(s):

Thin Films ◽

Precursor Route

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Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

RSC Advances ◽

10.1039/c9ra05348d ◽

2019 ◽

Vol 9 (54) ◽

pp. 31386-31397 ◽

Cited By ~ 4

Author(s):

Nico Koslowski ◽

Rudolf C. Hoffmann ◽

Vanessa Trouillet ◽

Michael Bruns ◽

Sabine Foro ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Yttrium Oxide ◽

High Voltage ◽

Thin Film Transistor ◽

Aluminium Oxide ◽

Oxide Formation ◽

Molecular Precursor ◽

P Transformation ◽

Precursor Route

Transformation of a new molecular precursor allows the formation of yttrium oxide under moderate conditions displaying high voltage breakthrough behaviour.

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