Vapor deposition of parylene-F using hydrogen as carrier gas

1999 ◽  
Vol 14 (1) ◽  
pp. 246-250 ◽  
Author(s):  
D. Mathur ◽  
G-R. Yang ◽  
T-M. Lu
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Device Fabrication ◽  
New Method ◽  
Silicon Substrates ◽  
Microelectronic Device ◽  
Precursor Method ◽  
Liquid Precursor ◽  
Carrier Gas ◽  
Liquid Precursors

A new method for depositing parylene-F (PA-F) thin films on silicon substrates has been explored. Hydrogen has been used as a carrier gas along with liquid precursors, dibromotetrafluoro-p-xylene and 1,4-bis(trifluoromethyl)benzene, to deposit PA-F. The properties of this film have been compared with the films obtained by the Gorham dimer method and the liquid precursor method using FTIR, XPS, and XRD. The PA-F films deposited by the dimer or liquid precursor acquired some kind of microcrystallinity on annealing. However, the PA-F films deposited in the presence of hydrogen were amorphous on annealing. This property could be potentially exploited for application in microelectronic device fabrication.

Chemical Vapor Deposition of Ruthenium Dioxide Thin Films From Bis(2, 4-Dimethylpentadienyl)Ruthenium

1997 ◽  
Vol 495 ◽  
Author(s):  
Lamartine Meda ◽  
Richard C. Breitkopf ◽  
Terry E. Haas ◽  
Rein U. Kirss
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Ruthenium Dioxide ◽  
Silicon Substrates ◽  
Carrier Gas

ABSTRACTThin films of polycrystalline RuO2 were deposited from bis(2,4-dimethylpentadienyl) ruthenium, (η5-2, 4-Me2C5H5)2Ru (1) and ruthenocene (2) on quartz and silicon substrates between 200 and 500°C under Ar/O2 or O2. Films deposited from 1 were more adherent than those grown from 2 under the same conditions, however, none of the films were particularly adherent when O2 was used as a carrier gas. SEM revealed a columnar structure for both precursors with grain size ranging from 0.15 – 1 5μ. Crystallinity increased after annealing the films to 800°C. Resistivity decreased as the annealing temperature increased.

Experimental Study of the Effect of Precursor Composition On the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process

2021 ◽  
Author(s):  
Omar D. Jumaah ◽  
Yogesh Jaluria
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transport Processes ◽  
Carrier Gas ◽  
Precursor Composition

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (AL2O3) substrates is carried out in two commercial MOCVD systems. This paper focuses on the composition of the precursor and the carrier gases, since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also the carrier gas plays an important role in deposition rate and uniformity. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.

Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Diamond Thin Films ◽  
Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

Fabrication of Organic Small Molecular Thin Films based on Ultrasonic Spray-Assisted Vapor-Deposition Method

2012 ◽  
Vol 1400 ◽  
Author(s):  
Jinchun Piao ◽  
Shigetaka Katori ◽  
Takumi Ikenoue ◽  
Shizuo Fujita
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Vapor Deposition ◽  
Low Cost ◽  
Device Fabrication ◽  
Deposition Method ◽  
Material Loss ◽  
Good Surface ◽  
Low Leakage ◽  
Molecular Thin Films

ABSTRACTSmall molecular thin films using solution-based method is a challengeable subject in organic optical and electronic devices. In our previous research, we successfully deposited aluminum tris(8-hydroxyquinoline) (Alq3) films on glass substrate. In this paper, aiming at future exploration of electroluminescent devices, we deposited N, N ’-Bis(3-methylphenyl)-N,N’- diphenylbenzidine) (TPD) films on indium-tin-oxide (ITO) substrates using the vapor-deposition method. Photoluminescence characteristics evidenced the actual formation of TPD thin films. Together with the good surface morphology and low leakage current of the films, the results are promising for actual device fabrication at low cost and low material loss.

Omcvd Elaboration and Characterization of Silicon Carbide and Carbon-Silicon Carbide Films from Organosilicon Compounds

1992 ◽  
Vol 271 ◽  
Author(s):  
R. Morancho ◽  
A. Reynes ◽  
M'b. Amjoud ◽  
R. Carles
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Thermal Behavior ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organosilicon Compounds ◽  
Carrier Gas

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.

Chemical Vapor Deposition of Nickel Ferrite Using Ni C5H5 2 and Fe C5H4C4H9 C5H5

2010 ◽  
Vol 3 (1) ◽  
Author(s):  
Rachel Walker ◽  
M. Singh ◽  
Y. Yang ◽  
C.G. Takoudis
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Nickel Ferrite ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Pressure Chemical ◽  
Oxygen Gas ◽  
The Individual

Chemical vapor deposition was used to deposit thin films of nickel oxide (NiO) and iron oxide (Fe2O3) on silicon substrates. Precursors chosen for this process were nickelocene,Ni(C5H5)2 and n-butylferrocene, Fe(C5H4C4H9)(C5H5), which were oxidized with oxygen gas in a low-pressure chemical vapor deposition system. Following the deposition of the individual metal oxides, the two precursors were used together with the goal of depositing a thin film of nickel ferrite (NiFe2O4). Both co-deposition and cyclic deposition were carried out, and the resulting thin films were analyzed using x-ray photoelectron spectroscopy. This study found that the resulting thin films did not contain NiFe2O4, but were composed of NiO and Fe2O3 in a different ratio. It is suggested that changing various parameters in this experiment can be used to vary this ratio.

Organometallic Chemical Vapor Deposition of Strontium Titanate thin Films

1989 ◽  
Vol 168 ◽  
Author(s):  
W. A. Feil ◽  
B. W. Wessels ◽  
L. M. Tonge ◽  
T. J. Marks
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Dielectric Constants ◽  
Silicon Substrates ◽  
Metal Organic ◽  
Organic Precursors ◽  
Organometallic Chemical Vapor Deposition

AbstractSrTiO3 thin films were deposited by low pressure organometallic chemical vapor deposition on silicon substrates using the volatile metal-organic precursors titanium isopropoxide and Sr(dipivaloylmethanate)2. Oxygen and water vapor were used as reactant gases and argon was used as a carrier gas. Growth rates ranging from 0.6–2.1 μm/hr were obtained at 650–800°C. Polycrystalline films were obtained at growth temperatures of 650–750°C, and amorphous films above 750°C. SrTiO3 films deposited on silicon substrates exhibited resistivities greater than 109 Ω-cm and dielectric constants up to 100.

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