Experimental determination of the power functions of the two-sample rank tests of WILCOXON, VAN DER WAERDEN and TERRY by Monte Carlo techniques.

1967 ◽  
Vol 21 (1) ◽  
pp. 55-68 ◽  
Author(s):  
P. Laan ◽  
J. Oosterhoff
Keyword(s):  
Monte Carlo ◽  
Experimental Determination ◽  
Power Functions ◽  
Rank Tests ◽  
Monte Carlo Techniques

scholarly journals Clustering in $^{18}$O - absolute determination of branching ratios via high-resolution particle spectroscopy

2020 ◽  
Author(s):  
Stuart Pirrie ◽  
Carl Wheldon ◽  
Tzany Kokalova ◽  
Jack Bishop ◽  
R. Hertenberger ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Excited State ◽  
High Resolution ◽  
Cluster Structure ◽  
High Energy ◽  
Branching Ratios ◽  
Light Nuclei ◽  
Decay Channels ◽  
Monte Carlo Techniques

The determination of absolute branching ratios for high-energy states in light nuclei is an important and useful tool for probing the underlying nuclear structure of individual resonances: for example, in establishing the tendency of an excited state towards \alphaα-cluster structure. Difficulty arises in measuring these branching ratios due to similarities in available decay channels, such as (\mathbf{^{18}}18O,\mathbf{n}𝐧) and (\mathbf{^{18}}18O,\mathbf{2n}2𝐧), as well as differences in geometric efficiencies due to population of bound excited levels in daughter nuclei. Methods are presented using Monte Carlo techniques to overcome these issues.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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