High Dielectric Properties of Bi1.5Zn1.0Nb1.5O7Thin Films Fabricated at Room Temperature

2008 ◽  
Vol 91 (10) ◽  
pp. 3399-3401 ◽  
Author(s):  
Jungho Ryu ◽  
Kun-Young Kim ◽  
Jong-Jin Choi ◽  
Byung-Dong Hahn ◽  
Woon-Ha Yoon ◽  
...  
2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000072-000077
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu0.05Nb2O7, and Eu0.56Ta2O7) in order to study the influence of A- and B-site modifications on dielectric properties.


2013 ◽  
Vol 802 ◽  
pp. 134-138 ◽  
Author(s):  
Worawut Makcharoen

The CaCu3Ti4O12(CCTO) has the advantage for the various applications especially for capacitive elements in microelectronic devices over the ferroelectric materials including BaTiO3. CCTO is a ceramic compound with a high dielectric constant but it has a high loss tangent at room temperature. In this work, the Influences of PtO2doping on the dielectric properties of CaCu3Ti4O12(CCTO) ceramics were investigate. The ceramics CCTO and PtO2doping CCTO were studied by X- ray diffraction, scanning electron microscopy. The dielectric properties have been measured as a function of temperature and frequency range 0.1 - 500 kHz. The XRD shows the CCTO structure does not changes after doping with platinum. The results show that PtO2doped can reduce the mean grain sizes of CCTO, but the dielectric constant still remained a height. The samples of 2.0 mol% Pt-doped have exhibited high dielectric constant of about 22,000 and the loss tangent about 0.7 at room temperature and frequency at 10 kHz. The reduced of the loss tangent could be interpreted with the internal barrier layer capacitor model (IBLC)


2006 ◽  
Vol 949 ◽  
Author(s):  
Xiaobing Shan ◽  
Xin Yang ◽  
Kewei Zhang ◽  
Zhongyang Cheng

ABSTRACTBy using conventional solution casting method, a flexible ceramic [CaCu3Ti4O12 (CCTO)]-Polymer [P(VDF-TrFE)] composite has been fabricated. The CCTO ceramic powders with a relative uniform size were prepared by traditional powder processing method. The dielectric properties of these films with different CCTO fractions were determined. The process was optimized to achieve high dielectric constant. A dielectric constant about 510 at room temperature and 1240 at 95 °C at 1 kHz for 6 layer hot compression was obtained.


2017 ◽  
Vol 43 (17) ◽  
pp. 15205-15213 ◽  
Author(s):  
Xin Dong ◽  
Guodong Xia ◽  
Qian Zhang ◽  
Lubin Li ◽  
Hongyu Gong ◽  
...  

2021 ◽  
Vol 2070 (1) ◽  
pp. 012093
Author(s):  
Dharmendra Mewada ◽  
Rajesh Kumar Katare

Abstract This project work reports synthesis, structural and dielectric nature of composite of the type (95%) La2CoMnO6+ (5%) Ba0.5Na0.5TiO3. The composite was characterized at room temperature for structural and dielectric properties. The structural characterization X-ray diffraction was carried for structural confirmation. The XRD data study convey the sample is dual phase in nature evident from the corresponding diffraction peaks. Monoclinic phase was acquired by La2CoMnO6 and the space groupof the phase is P 1 21/n whereas Ba0.5Na0.5TiO3 phase has acquired cubic structure with space group Pm-3m. The frequency dependent dielectric constant examined reveals high dielectric constant which decreases with increase in applied ac field values. Dielectric loss calculated shows the behaviour like dielectric constant which initially decreases abruptly with applied field and later attains frequency independent values. However, the ac conductivity was observed higher in the as synthesized.


2012 ◽  
Vol 1397 ◽  
Author(s):  
Juan Li ◽  
Dengren Jin ◽  
Lixin Zhou ◽  
Jinrong Cheng

ABSTRACTHigh dielectric tunability, low dielectric loss tangent and appropriate level of dielectric constant are the basic requirements for applications as electrically tunable dielectric microwave devices. In our experiments, the SrTiO3 green compacts made of the powder mixtures with various particle sizes were infiltrated with a BaTiO3 precursor solution and sintered at different temperatures between 1280 and 1350 ºC for 2 hours and 1350 ºC for 6 hours. The sintering, microstructural and dielectric properties were investigated. Results showed that the relative density of SrTiO3 ceramics could reached 93% when sintered at 1280 ºC for 2 hours. When sintered for 6 hours at 1350 °C, the room temperature dielectric constant of SrTiO3 reaches 900 at a frequency of 1MHz. It has only weak temperature dependence between 100 and 500K. The reason of the low sintering temperature for the dense SrTiO3 ceramics and the effects of sintering scheme on the dielectric properties from 100 K to 500 K are discussed in this paper.


2006 ◽  
Vol 518 ◽  
pp. 241-246 ◽  
Author(s):  
S. Marković ◽  
M. Mitrić ◽  
N. Cvjetićanin ◽  
Dragan P. Uskokovic

BaTi1-xSnxO3 (BTS) powders, with x ranging from 0 to 1, were synthesized by solid-state reaction technique. The powders were pressed into pellets and sintered at 1370 and 1420 oC. The structural characterization of sintered BTS samples was made at room temperature using X-ray diffraction and Raman spectroscopy measurements. The BTS samples were found to be singlephase solid solutions. Dielectric properties of sintered BTS samples were studied as a function of sintering temperatures and tin contents, too. For samples with x ranging from 0 up to 0.15, it has been found that the Curie temperature decreases while the maximum of the dielectric constant increases with increasing tin content. These samples have relatively high dielectric constants, contrary to x > 0.2 samples with very low dielectric constants. It is noticed that BTS ceramics sintered at 1420 oC exhibit better dielectric properties than those sintered at 1370 oC.


Author(s):  
Gyuseung Han ◽  
In Won Yeu ◽  
Kun Hee Ye ◽  
Seung-Cheol Lee ◽  
Cheol Seong Hwang ◽  
...  

Through DFT calculations, a Be0.25Mg0.75O superlattice having long apical Be–O bond length is proposed to have a high bandgap (>7.3 eV) and high dielectric constant (∼18) at room temperature and above.


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