Sputtered Silicon for Microstructures and Microcavities

1999 ◽  
Author(s):  
Kenneth A. Honer ◽  
Gregory T. A. Kovacs
Keyword(s):  
Surface Roughness ◽  
Electrical Resistivity ◽  
Low Temperature ◽  
Film Thickness ◽  
Plane Stress ◽  
Strain Gradient ◽  
Sacrificial Layer ◽  
Low Temperature Annealing ◽  
Deposition Power ◽  
Density Surface

Abstract Sputtered silicon can be used to make released microstructures at temperatures compatible with prefabricated aluminum-metallized CMOS circuitry. The fabrication sequence is similar to LPCVD polysilicon processes and involves a wet release from an oxide sacrificial layer. This process was used to fabricate a variety of test structures, including cantilevers, combs, and spirals. During release of the structures porosity to HF was observed in films up to 5 μm thick. This porosity resulted in the formation of completely enclosed cavities formed beneath silicon membranes over oxide sacrificial layers, and may have implications for the packaging of released devices. Several properties of the sputtered silicon films were investigated, including their in-plane stress, strain gradient, film density, surface roughness, electrical resistivity, and permeability. The dependency of these properties on deposition power, pressure, and film thickness as well as the effects of low-temperature annealing were also investigated.

scholarly journals Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

2010 ◽  
Vol 2010 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Chiuan Kuo ◽  
Chi-Chang Liu ◽  
Yaug-Fea Jeng ◽  
Chung-Chih Lin ◽  
Yeuh-Yeong Liou ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Low Temperature ◽  
Film Thickness ◽  
Molybdenum Oxide ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Visible Transmittance ◽  
Deposited Film

Indium molybdenum oxide (IMO) films were deposited onto the polyethersulfone (PES) substrates by ion-beam-assisted evaporation (IBAE) deposition at low temperature in this study. The effects of film thickness on their optical and electrical properties were investigated. The results show that the deposited IMO films exhibit a preferred orientation of B(222). The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness. The IMO film with the lowest resistivity of 7.61 × 10−4 ohm-cm has been achieved when the film thickness is 120 nm. It exhibits a satisfactory surface roughness of 8.75 nm and an average visible transmittance of 78.7%.

Growth Behavior of Au Films on SiO2Film and Direct Transfer for Smoothing Au Surfaces

2019 ◽  
Vol 13 (2) ◽  
pp. 254-260 ◽  
Author(s):  
Michitaka Yamamoto ◽  
Takashi Matsumae ◽  
Yuichi Kurashima ◽  
Hideki Takagi ◽  
Tadatomo Suga ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Low Temperature ◽  
Film Thickness ◽  
Root Mean Square ◽  
Room Temperature ◽  
Growth Behavior ◽  
Direct Transfer ◽  
Mean Square ◽  
Low Temperature Bonding ◽  
Deposited Films

Direct transfer of Au films deposited on smooth SiO2film with RMS (root mean square) surface roughness of 0.24 nm was investigated with the aim of generating smooth Au surfaces. Deposited Au films with different thicknesses were transferred to rough Au surfaces on target substrates at room temperature with a contact pressure of 50 MPa. Observation of the growth behavior of the deposited films revealed that they formed a continuous structure when their nominal film thickness was around 15 nm or above. The transfer of continuous Au films with a thickness of 20, 51, or 102 nm reduced the RMS roughness of the rough Au surfaces from 1.6 nm to 0.4 nm. In contrast, the transfer of Au films with a thickness less than 5 nm increased their surface roughness. This direct transfer technique should thus be useful for low temperature bonding.

Non-Ohmic Normal State Behavior and the Onset of Global Superconductivity in Partially Annealed Quench–Condensed Films of Tin

1990 ◽  
Vol 195 ◽  
Author(s):  
Carl A. Shiffman ◽  
Robert S. Markiewicz ◽  
Men Ho
Keyword(s):  
Low Temperature ◽  
Film Thickness ◽  
Sheet Resistance ◽  
Normal State ◽  
State Behavior ◽  
Low Temperature Annealing ◽  
A Value

ABSTRACTFilms of tin condensed onto 4K pyrex substrates can be driven from “insulating” (i.e. dR/dT < 0) to superconducting behavior by low temperature annealing. Global superconductivity occurs when the normul state sheet resistance, R□, shrinks to a value very near R□ ≡ h/4ea, as in experiments where R□ is changed by increasing the film thickness. When R□ > R□, conduction is decidedly non-ohmic, with R□(T,V) = R□(T) + R1 (T)exp(−m(T)|V|).

Defect Observation of Embedded Components of a Low Temperature Co-Fired Ceramic

2010 ◽  
Vol 654-656 ◽  
pp. 2394-2397 ◽  
Author(s):  
Rosidah Alias ◽  
Sabrina Mohd Shapee ◽  
Mohd Zulfadli Mohamed Yusoff ◽  
Ibrahim Azmi ◽  
Zulkifli Ambak ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Low Temperature ◽  
Glass Ceramic ◽  
Ceramic Composite ◽  
Composite System ◽  
Surface Defects ◽  
Densification Process ◽  
Density Surface ◽  
Kinetics Of ◽  
Glass Ceramic Composite

This paper reports observations of defects in laminated eight layers of a glass-ceramic composite system fabricated by a standard low temperature co-fired ceramic (LTCC) technology. The layers were laminated at 3000 psi and 70 °C for 10 minutes and were fired at 850 °C for 15 minutes. Material characterizations of the green compact and fired substrate were carried out on density, surface roughness and microstructure. The crack and warpage of the substrate were related to the microstructure and densification process of the system. It was found that the presence of these defects could be due to a mismatch of the sintering kinetics of the glass-ceramic composite system and silver conductor materials which lead to the development of stresses which act on both materials. The detailed microscopic observation of the internal and surface defects is explained.

Low-temperature annealing of YBa2Cu3O7-x

1992 ◽  
Vol 50 (1) ◽  
pp. 88-89
Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Depletion ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Oxygen Diffusion Rate

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.

A new method for quantifying the blocking of coated paperboard

TAPPI Journal ◽  
2010 ◽  
Vol 9 (5) ◽  
pp. 29-35 ◽  
Author(s):  
PAULINE SKILLINGTON ◽  
YOLANDE R. SCHOEMAN ◽  
VALESKA CLOETE ◽  
PATRICE C. HARTMANN
Keyword(s):  
Surface Roughness ◽  
Fatty Acid ◽  
Surface Energy ◽  
Film Thickness ◽  
External Factors ◽  
Additive Concentration ◽  
Pressure Surface ◽  
Fatty Acid Amides ◽  
Coated Surfaces ◽  
Definite Period

Blocking is undesired adhesion between two surfaces when subjected to pressure and temperature constraints. Blocking between two coated paperboards in contact with each other may be caused by inter-diffusion, adsorption, or electrostatic forces occurring between the respective coating surfaces. These interactions are influenced by factors such as the temperature, pressure, surface roughness, and surface energy. Blocking potentially can be reduced by adjusting these factors, or by using antiblocking additives such as talc, amorphous silica, fatty acid amides, or polymeric waxes. We developed a method of quantifying blocking using a rheometer. Coated surfaces were put in contact with each other with controlled pressure and temperature for a definite period. We then measured the work necessary to pull the two surfaces apart. This was a reproducible way to accurately quantify blocking. The method was applied to determine the effect external factors have on the blocking tendency of coated paperboards, i.e., antiblocking additive concentration, film thickness, temperature, and humidity.

EVANOHM

Alloy Digest ◽  
1960 ◽  
Vol 9 (4) ◽  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Temperature Coefficient ◽  
Base Alloy ◽  
Nickel Base Alloy ◽  
Temperature Coefficient Of Resistance ◽  
High Electrical Resistivity ◽  
Nickel Base

Abstract EVANOHM is a nickel-base alloy having low temperature coefficient of resistance and high electrical resistivity. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on joining. Filing Code: Ni-57. Producer or source: Wilbur B. Driver Company.

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