Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

Indium molybdenum oxide (IMO) films were deposited onto the polyethersulfone (PES) substrates by ion-beam-assisted evaporation (IBAE) deposition at low temperature in this study. The effects of film thickness on their optical and electrical properties were investigated. The results show that the deposited IMO films exhibit a preferred orientation of B(222). The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness. The IMO film with the lowest resistivity of 7.61 × 10−4 ohm-cm has been achieved when the film thickness is 120 nm. It exhibits a satisfactory surface roughness of 8.75 nm and an average visible transmittance of 78.7%.

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Sputtered Silicon for Microstructures and Microcavities

10.1115/imece1999-0244 ◽

1999 ◽

Author(s):

Kenneth A. Honer ◽

Gregory T. A. Kovacs

Keyword(s):

Surface Roughness ◽

Electrical Resistivity ◽

Low Temperature ◽

Film Thickness ◽

Plane Stress ◽

Strain Gradient ◽

Sacrificial Layer ◽

Low Temperature Annealing ◽

Deposition Power ◽

Density Surface

Abstract Sputtered silicon can be used to make released microstructures at temperatures compatible with prefabricated aluminum-metallized CMOS circuitry. The fabrication sequence is similar to LPCVD polysilicon processes and involves a wet release from an oxide sacrificial layer. This process was used to fabricate a variety of test structures, including cantilevers, combs, and spirals. During release of the structures porosity to HF was observed in films up to 5 μm thick. This porosity resulted in the formation of completely enclosed cavities formed beneath silicon membranes over oxide sacrificial layers, and may have implications for the packaging of released devices. Several properties of the sputtered silicon films were investigated, including their in-plane stress, strain gradient, film density, surface roughness, electrical resistivity, and permeability. The dependency of these properties on deposition power, pressure, and film thickness as well as the effects of low-temperature annealing were also investigated.

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Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

Thin Solid Films ◽

10.1016/j.tsf.2005.06.035 ◽

2005 ◽

Vol 492 (1-2) ◽

pp. 203-206 ◽

Cited By ~ 26

Author(s):

Zhi Yan ◽

Zhi Tang Song ◽

Wei Li Liu ◽

Qing Wan ◽

Fu Min Zhang ◽

...

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Electrical Properties ◽

Ion Beam ◽

Optical And Electrical Properties ◽

Oxide Thin Films ◽

Ion Beam Assisted Deposition ◽

P Type

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OPTICAL AND ELECTRICAL PROPERTIES OF ARGON ION BEAM IRRADIATED PVA/Ag NANOCOMPOSITES

Surface Review and Letters ◽

10.1142/s0218625x1750038x ◽

2017 ◽

Vol 24 (03) ◽

pp. 1750038 ◽

Cited By ~ 5

Author(s):

A. M. ABDEL REHEEM ◽

A. ATTA ◽

T. A. AFIFY

Keyword(s):

Silver Nanoparticles ◽

Electrical Properties ◽

Ion Beam ◽

Composite Films ◽

Band Gap Energy ◽

Dielectric Measurement ◽

Optical And Electrical Properties ◽

Structure Property ◽

Casting Technique ◽

Argon Ion

In this work, PVA/Ag nanocomposites films were prepared using solution casting technique, these films were irradiated with Argon ion beam to modify the structure. The main objective of the study is to enhance the optical and electrical properties of the polymer nanocomposites films by irradiation. The conventional characterization techniques such as UV–Visible spectroscopy, X-ray diffraction (XRD), Fourier transform infrared (FTIR), transmission electron microscope (TEM) and dielectric measurement are employed to understand the structure–property relations. FTIR analysis of these composite films shows chemical changes and a significant impact on them can be observed after irradiation. After doping, the XRD data shows silver nanoparticles formation in the PVA polymer. The band gap energy of samples is decreased with increases in the concentration of silver nanoparticles and ion beam fluence, which gives clear indication that ion beam irradiation induced defects are formed in the composite systems. The electrical conductivity, dielectric loss [Formula: see text] and dielectric constant [Formula: see text] are increased with increasing ion beam fluence and Ag dopant concentration.

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Effect of Au ion beam on structural, surface, optical and electrical properties of ZnO thin films prepared by RF sputtering

Ceramics International ◽

10.1016/j.ceramint.2018.06.061 ◽

2018 ◽

Vol 44 (14) ◽

pp. 16464-16469 ◽

Cited By ~ 6

Author(s):

M. Fiaz Khan ◽

K. Siraj ◽

A. Sattar ◽

S. Majeed ◽

H. Faiz ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Ion Beam ◽

Rf Sputtering ◽

Zno Thin Films ◽

Optical And Electrical Properties ◽

Surface Optical ◽

Structural Surface

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Structure, Optical and Electrical Properties of Pulsed Laser Deposited and Ion Beam Deposited CNx Films

MRS Proceedings ◽

10.1557/proc-498-295 ◽

1997 ◽

Vol 498 ◽

Cited By ~ 1

Author(s):

K. F. Chan ◽

X.-A. Zhao ◽

C. W. Ong

Keyword(s):

Electrical Conductivity ◽

Electrical Properties ◽

Ion Beam ◽

Pulsed Laser ◽

Film Structure ◽

Laser Deposition ◽

Optical And Electrical Properties ◽

Ion Beam Deposition ◽

Valence Bands ◽

Beam Deposition

ABSTRACTCNx films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature Ts = 25°C and high N2 partial pressure have the highest N content (fN) and polymerlike structure, accompanied by large band gap (Eg) and low electrical conductivity (σroom). The rise in Ts lowers fN and induces graphitization of the film structure, so Eg reduces and σroom increases. IBD (with and without N2+ assist) films are graphitic. Higher Ts further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and σroom approaches to that of graphite. No evidence was found to show successful formation of the hypothetical β-C3N4 phase in the films.

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