Nanodiamond Coating for Field Emission Filaments

Materials ◽  
2003 ◽  
Author(s):  
A. V. Kvit ◽  
V. V. Zhirnov ◽  
T. Tyler ◽  
J. J. Hren

Nanodiamond is very important for autoemission applications because it allows investigators to reduce electric field for electron emission current generation. Moreover, we can also consider nanodiamonds as “bricks” for new method of diamond coating growth. In this paper we describe the formation and investigation of nanodiamond-based coating on Mo needles. Manipulation of nanodiamond particles with high electric fields allows us to prepare systems of isolated diamond quantum dots on a conductive surface. Localization of an isolated single-crystalline diamond particle ∼5 nm in size on the «tip of a needle» presents an unique opportunity for studies of correlations between the structural and emission properties of individual diamond nanoparticles. Combinations of TEM observations, field emission measurements, and repeated diamond depositions on the same emitter provided a direct comparison of the effects of various amounts of nanodiamond particles on the emission properties of a coated metal field emitter. By utilizing Z-contrast and EELS technique we investigated distribution of nitrogen impurity inside individual nanoparticle and aging effect (increasing of s p2 fraction on the surface of nanodiamond with time).

2019 ◽  
Vol 89 (6) ◽  
pp. 952
Author(s):  
Р.К. Яфаров

AbstractVariations of the morphology and field-emission properties of surface-structured n - and p -type silicon wafers have been studied. The silicon surface has been structured by etching in a fluorine–carbon plasma and depositing subnanodimensional island carbon masks. It has been shown that surface structuring in a fluorine–carbon plasma makes it possible to reach desired field-emission currents in electric fields of different strengths. Physicochemical models of field emission mechanisms and models of destruction of surface-modified multipoint silicon array cathodes have been considered.


2011 ◽  
Vol 279 ◽  
pp. 88-92
Author(s):  
Jin Hai Gao ◽  
Wu Qing Zhang ◽  
Zhen Li

The globe-like diamond microcrystalline aggregates films were fabricated by microwave plasma chemical vapor deposition method. The field emission properties and emission stability of the films were tested using a diode structure in vacuum. It was found that the globe-like diamond microcrystalline aggregates films exhibited good electron emission properties and stability. The turn-on field of 0. 55 V /μm and the current density of 11mA/cm2 at the electric fields of 2.73V/μm were obtained. At the successive operator circles, the turn-on field tends to stabilize at 1. 08V /μm and the current density of 6.6 mA/cm2 is obtained.


2017 ◽  
Vol 423 ◽  
pp. 788-792 ◽  
Author(s):  
Yijia Wang ◽  
Qiuping Wei ◽  
Zhiming Yu ◽  
Hangyu Long ◽  
Zejun Deng ◽  
...  

Author(s):  
David J. Larson ◽  
Patrick P. Camus ◽  
Thomas F. Kelly

An atom probe field ion microscope (APFIM) has been constructed inside a NORAN Instruments Automated Digital Electron Microscope (ADEM). The ADEM is a scanning electron microscope (SEM) with a field emission source and a very large vacuum chamber. The APFIM has positive and negative high voltage capability and uses a microchannel-plate/phosphor screen assembly as an imaging and single-ion detector. The APFIM specimen can be cooled by a cryogenic refrigerator. The motivation for this study was the need to deliver an electron beam to the apex of an APFIM specimen while a high field is applied. The beam will be used to thermally pulse the field evaporation rate. The expected field-induced image shift and distortion has been studied previously in a transmission EM with a liquid metal field emission source as a specimen.Fig. 1 shows the interior of the instrument. Computer simulations were done for electron trajectories with negative and positive voltages applied to the emitter based on a simple paraboloidal electric field model described previously.


2018 ◽  
Vol 36 (1) ◽  
pp. 27-33
Author(s):  
Izabela Stępińska ◽  
Elżbieta Czerwosz ◽  
Mirosław Kozłowski ◽  
Halina Wronka ◽  
Piotr Dłużewski

Abstract Field emission from materials at high electric fields can be associated with unfavorable or even destructive effect on the surface of the investigated cathode. The impact of high voltage electric power supply causes locally very strong electric fields focusing on the cathode surface. It causes a number of phenomena, which can adversely affect the morphology and the structure of the cathode material. Such a phenomenon is, for example, peeling of an emissive layer from the substrate or its burnout. It results in tearing of the layer and a decrease or loss of its ability to electrons emission. The cold cathodes in a form of CNT films with various CNTs superficial distribution are obtained by physical vapor deposition followed by chemical vapor deposition. CNTs are catalyzed in pyrolytic process with xylene (CVD), by Ni in a form of nanograins (few nm in size) placed in carbonaceous matrix. These films are built of emissive CNTs - carbonaceous film deposited on different substrates. In this work, the morphology and topography of superficial changes resulting from external electric field in such films were investigated.


1995 ◽  
Vol 416 ◽  
Author(s):  
W. Zhu ◽  
G. P. Kochanski ◽  
S. Jin

ABSTRACTWe have developed both experimental and numerical methods to collect and analyze field emission data from diamond samples. The diamond emitters are either films prepared by low pressure chemical vapor deposition (CVD) or powders synthesized by traditional high pressure high temperature (HPHT) processes. We established a strong correlation between the electric field required for emission and the defect densities in undoped or p-type doped diamond. We further found that ultrafine diamond particulate emitters offer substantially enhanced electron field emission properties at low electric fields compared to CVD diamond emitters. When subject to appropriate processing schemes, the particulate diamond emitters exhibit extremely low emission fields, typically 1-5 V/μm for a current density of 10 mA/cm2. These are believed to be the lowest-voltage field emitters ever reported.


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