Dielectric Properties of Er-Doped HfTiO Films for High-K Gate Stacks

2011 ◽  
Author(s):  
Xianfei Li ◽  
Ping Wu ◽  
Hui Wang ◽  
Yili Pei ◽  
Sen Chen ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gate Dielectric ◽  
Dielectric Materials ◽  
Atomic Ratio ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
High K ◽  
Er Doped

HfTiErO and HfTiO thin films (∼50nm), as potential replacements for traditional SiO2 gate dielectric materials, were prepared on n-Si (100) substrates by radio frequency magnetron sputtering. The dielectric characteristics of HfTiErO were compared with those of HfTiO. The structure of HfTiErO was analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The growth of HfTiErO and HfTiO were observed by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). Experimental results indicate that as the Er content increases, the dielectric constant (k) can increase to the maximum (∼20.2) and then decrease. In comparison with HfTiO, HfTiErO films (the atomic ratio of Hf:Ti:Er was 1:0.16:0.10) can exhibit a higher relative permittivity (increasing by 54% compared with HfTiO), a smoother interface, a better surface microscopy and a lower interface trap density in C-V curves.

Degradation of Co-Evaporated Perovskite Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 923-929 ◽  
Author(s):  
Congcong Wang ◽  
Youzhen Li ◽  
Xuemei Xu ◽  
Benjamin Ecker ◽  
Chenggong Wang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Substantial Reduction ◽  
Complete Removal ◽  
Ambient Air ◽  
Atomic Ratio ◽  
X Ray Diffraction ◽  
Structural Conversion ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTMethylammonium lead halide perovskites have been developed as highly promising materials to fabricate efficient solar cells in the past few years. We have investigated degradation of co-evaporated CH3NH3PbI3 films in ambient air, oxygen and water respectively using x-ray photoelectron spectroscopy (XPS), small angle x-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). The CH3NH3PbI3 film has an excellent atomic ratio and crystallinity. XPS results indicate that the film is not sensitive to oxygen and dry air, while ambient and water exposures achieve similar effects. XRD further indicates a structural conversion to PbI2 and a drastic morphology change from smooth to rough is revealed by AFM and SEM. The experiment indicated that H2O plays a dominated role in the degradation of CH3NH3PbI3 films. The degradation can be characterized by almost complete removal of N, substantial reduction of I, residual of PbI2, C, O, and I compounds on the surface.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Characterization of X-ray irradiated graphene oxide coatings using X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy

2013 ◽  
Vol 28 (2) ◽  
pp. 68-71 ◽  
Author(s):  
Thomas N. Blanton ◽  
Debasis Majumdar
Keyword(s):  
Atomic Force Microscopy ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
X Ray Diffraction ◽  
Carbon Phase ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

In an effort to study an alternative approach to make graphene from graphene oxide (GO), exposure of GO to high-energy X-ray radiation has been performed. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) have been used to characterize GO before and after irradiation. Results indicate that GO exposed to high-energy radiation is converted to an amorphous carbon phase that is conductive.

Improved Functional Capabilities of Quasi-Two-Dimensional Tungsten Oxide Nanostructures

2016 ◽  
Vol 689 ◽  
pp. 55-59
Author(s):  
Serge Zhuiykov
Keyword(s):  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Current Sensing ◽  
X Ray ◽  
Force Microscopy ◽  
Functional Capabilities ◽  
Atomic Force ◽  
Oxide Nanostructures ◽  
Afm Analysis

Electrical properties and morphology of orthorhombic β–WO3 nano-flakes with thickness of ~7-9 nm were investigated at the nanoscale using energy dispersive X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and current sensing force spectroscopy atomic force microscopy (CSFS-AFM, or PeakForce TUNATM). CSFS-AFM analysis established good correlation between the topography of the developed nanostructures and various features of WO3 nano-flakes synthesized via a two-step sol-gel-exfoliation method. It was determined that β–WO3 nano-flakes annealed at 550°C possess distinguished and exceptional thickness-dependent properties in comparison with the bulk, micro- and nano-structured WO3 synthesized at alternative temperatures.

STUDIES ON SURFACE STRUCTURE, MORPHOLOGY AND COMPOSITION OF Co–W COATINGS ELECTRODEPOSITED WITH DIRECT AND PULSE CURRENT USING GLUCONATE BATH

2013 ◽  
Vol 20 (01) ◽  
pp. 1350006 ◽  
Author(s):  
PARTHASARATHI BERA ◽  
H. SEENIVASAN ◽  
K. S. RAJAM
Keyword(s):  
Photoelectron Spectroscopy ◽  
Pulse Current ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Force Microscopy ◽  
Dsc Studies ◽  
Atomic Force ◽  
Electrodeposited Coating

Co–W alloy coatings were deposited with direct current (DC) and pulse current (PC) electrodeposition methods using gluconate bath at pH5 and characterized by X-ray diffraction, field emission scanning electron microscopy, atomic force microscopy, differential scanning calorimetry (DSC) and X-ray photoelectron spectroscopy (XPS). DSC studies hint at the possibility of formation of metallic glasses. Detailed XPS studies of these alloy coatings have been carried out to compare elemental states and composition of Co and W in DC and PC electrodeposited alloys. DC-plated alloy has significant amount of Co and W metal along with their respective oxidized species. In contrast, mainly oxidized metals are present in the following layers of as-deposited coatings prepared with PC plating. Concentration of Co metal is observed to increase during sputtering, whereas there is no change in W6+ concentration. Microhardness measurement of all the Co–W coatings shows higher hardness compared to Co metal and 1:1 and 1:4 PC electrodeposited coatings show little higher hardness compared to 1:2 PC electrodeposited coating.

scholarly journals Electronic and vibrational decoupling in chemically exfoliated bilayer 2D-V2O5

2021 ◽  
Author(s):  
Reshma P R ◽  
Anees Pazhedath ◽  
Ganesan Karuppiah ◽  
Arun Prasad ◽  
Sandip Dhara
Keyword(s):  
Transition Metal ◽  
Photoelectron Spectroscopy ◽  
Density Functional ◽  
Blue Shift ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
Visible Absorption ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Abstract Recently emerged transition metal oxide (TMO) based 2D nanostructures are gaining a foothold in advanced applications. Unlike, 2D transition metal dichalchogenides, it is strenuous to obtain high quality thin TMOs due to exotic surface reconstruction during synthesis. Herein, we report the synthesis of bilayer thin 2D-V2O5 nanosheets using chemical exfoliation. Synchrotron X-ray diffraction, X-ray photoelectron spectroscopy and atomic force microscopy substantiate the successful formation of bilayer thin 2D-V2O5. Ultraviolet-visible absorption spectra exhibit a thickness dependent blue shift in the optical band gap, signifying the emergence of electronic decoupling. Raman spectroscopy fingerprinting shows a thickness dependent vibrational decoupling of phonon modes. Further, it has been verified by computing the lattice vibrational modes using density functional perturbation theory. In this study, the manifestation of the electronic and vibrational decoupling is used as a novel probe to confirm the successful exfoliation of bilayer 2D-V2O5 from its bulk counterpart.

scholarly journals Laser Ablation Ceramic Target for 8YSZ High-k Dielectric Electrolyte thin Films Precessed by PLD on Si(100) and Pt/Si(111)

2020 ◽  
Vol 71 (7) ◽  
pp. 272-277
Author(s):  
Rovena Veronica Pascu
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
High K ◽  
Potential Applications ◽  
Electrochemical Devices ◽  
High K Dielectric

The cubic structure 8YSZ (8%Yttria-Stabilized Zirconia) thin films deposited by PLD(Pulsed Laser Deposition) on substrates Si (100) and Pt/Si (111) by identical control parameters have potential applications as electrolytes for planar micro electrochemical devices like Lambda oxygen sensors and IT-�SOFC. It appearance differences in polycrystalline structural and optical characterization by XRD (X-ray Diffraction), SEM (Scanning Electron Microscope), AFM (Atomic Force Microscopy) and V- VASE (Variable Angle Spectroscopic Ellipsometry. The differences are relating on crystalline dimensions, lattice parameters; surface roughness measured by V- VASE and AFM are presented synthetic to evidence the differences generated by substrates.

scholarly journals Ultrashort Pulsed Laser Ablation of Magnesium Diboride: Plasma Characterization and Thin Films Deposition

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Angela De Bonis ◽  
Agostino Galasso ◽  
Antonio Santagata ◽  
Roberto Teghil
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Optical Emission ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Laser Target ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

A MgB2target has been ablated by Nd:glass laser with a pulse duration of 250 fs. The plasma produced by the laser-target interaction, showing two temporal separated emissions, has been characterized by time and space resolved optical emission spectroscopy and ICCD fast imaging. The films, deposited on silicon substrates and formed by the coalescence of particles with nanometric size, have been analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction. The first steps of the films growth have been studied by Transmission Electron Microscopy. The films deposition has been studied by varying the substrate temperature from 25 to 500°C and the best results have been obtained at room temperature.

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