Application of Frequency-Domain Thermal Measurements in Electronics Packaging

Author(s):  
Yizhang Yang ◽  
Zhen Zhang ◽  
Maxat Touzelbaev

Increase of power densities has become the primary constraint for semiconductor industry to sustain the Moore’s law for microprocessor evolution. Further development of packaging technology and advanced thermal interface materials (TIMs) requires both maximization of the total thermal throughput of the system and mitigation of the thermal impact from non-uniformly distributed hotspots. Therefore, thermal characterization techniques capable of resolving partial thermal resistances at the component level have received increased emphasis in development of advanced packaging technologies. This work develops a practical method for thermal characterization of IC packages using the frequency-domain measurement technique. It is well suited for investigation of package thermal performance during various application-specific tests in field conditions, as well as a tool for development of TIM and optimization of packaging process. Both steady-state and dynamic thermal characterizations of the IC packages can be achieved using this technique. Various applications, such as thermal structure function measurement, silicon die hot-spot detection, and in-situ thermal/mechanical characterization of TIMs are discussed.

2014 ◽  
Vol 35 (9) ◽  
pp. 3403-3426 ◽  
Author(s):  
D. Coppola ◽  
M. Laiolo ◽  
D. Delle Donne ◽  
M. Ripepe ◽  
C. Cigolini

2011 ◽  
Vol 2011 (1) ◽  
pp. 000947-000952
Author(s):  
Jichul Kim ◽  
Jae Choon Kim ◽  
Mina Choi ◽  
Eunseok Cho ◽  
Hyunggil Baek ◽  
...  

A new technique is proposed for simultaneous, in-situ characterization of in-package thermal resistances (junction-to-case and junction-to-board) in a single test. A thin resistive heater is patterned on package top surface to establish one-dimensional heat conduction along the package vertical direction. Accompanying temperature rise at the heater is measured using a thermocouple and analyzed to estimate equivalent thermal R-C network model of the package. Due to the one-dimensionality of the probing thermal wave, the derived R-C network model represents physical package thermal structure, enabling simultaneous estimation of both thermal resistances (theta-JC and theta-JB). The proposed technique is validated by measuring theta-JC and JB of an overmolded flip-chip ball grid array package. The proposed method eliminates need for a separate test setup for the characterization of each thermal resistance, enhancing the accuracy and efficiency of the package thermal characterization. In addition, use of the external heater and sensing element, instead of on-chip heater and temperature sensor, enables in-situ thermal characterization of a real package mounted on the set board.


2013 ◽  
Vol 380-384 ◽  
pp. 3388-3391
Author(s):  
Xiao Chao ◽  
Li Xin Wang

The research of thermal resistance, an important parameter for the thermal characterization of Power MOSFET device, is gaining increasing importance. Structure function, a novel and popular method, can be used to analyse the thermal characterization of Power MOSFET. In this paper, Wiener filter, a frequency-domain method of performing deconvolution that produces the structure function, is proposed. This method is applied to a Power MOSFET device in a TO-39 package. The thermal resistance of this Power MOSFET device was analysed from the structure function based on Wiener filter method.


Author(s):  
S.F. Corcoran

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.


1999 ◽  
Vol 6 (1) ◽  
pp. 101-108 ◽  
Author(s):  
E. Delacre ◽  
D. Defer ◽  
E. Antczak ◽  
B. Duthoit

2005 ◽  
Vol 125 ◽  
pp. 177-180
Author(s):  
T. Lopez ◽  
M. Picquart ◽  
G. Aguirre ◽  
Y. Freile ◽  
D. H. Aguilar ◽  
...  

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