scholarly journals Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates

2001 ◽  
Vol 16 (11) ◽  
pp. 3124-3132 ◽  
Author(s):  
Uong Chon ◽  
Hyun M. Jang ◽  
Sun-Hwa Lee ◽  
Gyu-Chul Yi
Keyword(s):  
Remanent Polarization ◽  
Pyrochlore Phase ◽  
Random Access ◽  
Layered Perovskite ◽  
Oriented Growth ◽  
Plane Orientation ◽  
Amorphous Surface ◽  
Ferroelectric Random Access Memories ◽  
Large Remanent Polarization ◽  
Template Material

Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were successfully grown on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol-coating route. The substitution of lanthanum ions for bismuth ions in the layered perovskite suppressed the formation of pyrochlore phase and enhanced the c-axis-oriented growth. The c-axis-oriented BLT film fabricated on a Pt/Ti/SiO2/Si(100) substrate showed fatigue-free characteristics with a large remanent polarization of 26–28 μC/cm2 and the coercive field of 50–75 kV/cm. These features significantly enhance the potential value of the BLT film for the applications to high-density ferroelectric random-access memories devices. In addition, the c-axis-oriented BLT film, with a homogeneous in-plane orientation on an amorphous surface, can be used as a suitable template material for applications to various electro-magneto-optic devices.

scholarly journals INVESTIGATION ON STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi3.25La0.75Ti3O12 THIN FILMS

2018 ◽  
Vol 54 (1A) ◽  
pp. 80
Author(s):  
Tran Van Dung
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Solution Process ◽  
Hysteresis Loops ◽  
Sample Surface ◽  
Metal Electrode ◽  
Layered Perovskite ◽  
Oriented Growth

Lanthanum doped bismuth titanate (Bi3.25La0.75Ti3O12 abbreviated as BLT) has been known as one of typical materials for Bi-layered perovskite structure which possess several unique properties such as good fatigue with metal electrode and stable remanent polarization, hence it has potential applications in ferroelectric random access memory. In this work, the BLT thin films were fabricated on Pt/TiO2/SiO2/Si substrates by using a solution process, and then their features including crystal structure, surface morphology, and electrical properties were characterized by using X-ray diffraction system (XRD), scanning electron microscopy (SEM), and electrical measurement system (Radiant Precision LC 10), respectively. The obtained results point out that the BLT thin film annealed at 725 oC is mostly optimum from a viewpoint of film quality and ferroelectricity. In particular, the optimum BLT thin film having a thickness of 200 nm does not contain any cracks on the sample surface, and the grain size is closed to 400 nm from SEM observation. XRD patterns imply that the BLT thin film had stoichiometric structure with preferred orientations of (117) and (006), when annealed at temperatures higher than 725 oC. In addition, we found the influence of La (0.75) dopping on c-axis-oriented growth of BLT thin films is clear from the structural analysis. The remanent polarization of optimum BLT thin film is approximately 10 μC/cm2, but the ferroelectric hysteresis loops are not saturated at low applied voltages.

Large remanent polarization and enhanced magnetic properties in non-quenched Bi(Fe,Ga)O3-(Ba,Ca)(Zr,Ti)O3 multiferroic ceramics

2017 ◽  
Vol 110 (11) ◽  
pp. 112902 ◽  
Author(s):  
Ningtao Liu ◽  
Ruihong Liang ◽  
Zhen Liu ◽  
Zhiyong Zhou ◽  
Chenhong Xu ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Remanent Polarization ◽  
Large Remanent Polarization

Large remanent polarization of 100% polar-axis-oriented epitaxial tetragonal Pb(Zr0.35Ti0.65)O3 thin films

2003 ◽  
Vol 82 (26) ◽  
pp. 4761-4763 ◽  
Author(s):  
Hitoshi Morioka ◽  
Gouji Asano ◽  
Takahiro Oikawa ◽  
Hiroshi Funakubo ◽  
Keisuke Saito
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Polar Axis ◽  
Large Remanent Polarization

Voltage pulse controlling multilevel data ferroelectric storage memory with a nonepitaxial ultrathin film

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 80011-80016 ◽  
Author(s):  
Pengfei Hou ◽  
Jinbin Wang ◽  
Xiangli Zhong ◽  
Yuan Zhang ◽  
Xiong Zhang ◽  
...  
Keyword(s):  
Voltage Pulse ◽  
Random Access ◽  
Ultrathin Film ◽  
Low Density ◽  
Multilevel Data ◽  
Ferroelectric Random Access Memories

Multilevel data ferroelectric storage memory is a breakthrough for addressing low density in ferroelectric random access memories.

scholarly journals Direct Comparison of Structural and Electrical Properties of Epitaxial (001)-, (116)-, and (103)-Oriented SrBi2Ta2O9 Thin Films on SrTiO3 and Silicon Substrates

2000 ◽  
Vol 655 ◽  
Author(s):  
H. N. Lee ◽  
A. Pignolet ◽  
S. Senz ◽  
C. Harnagea ◽  
D. Hesse
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Bottom Electrode ◽  
Three Dimensional ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Silicon Substrates ◽  
Epitaxial Thin Films ◽  
Structural And Electrical Properties ◽  
First Time

AbstractAnisotropies of the properties of the bismuth-layered perovskite SrBi2Ta2O9 (SBT) have been investigated using epitaxial thin films grown by pulsed laser deposition both on conducting Nb-doped SrTiO3 (STO) single crystal substrates and on Si(100) substrates. It has been found that the three-dimensional epitaxy relationship SBT(001)∥STO(001); SBT [110] ∥STO[100] can be applied to all SBT thin films on STO substrates of (001), (011), and (111) orientations. An about 1.7 times larger remanent polarization was obtained in (103)-oriented SBT films than in that of (116) orientation, while the (001)-oriented SBT films revealed no ferroelectricity along their c-axis. Non-c-axis-oriented SBT films with a well-defined (116) orientation were also grown on silicon substrates for the first time. They were deposited on Si(100) covered with a conducting SrRuO3 (110) bottom electrode on a YSZ(100) buffer layer.

Large remanent polarization and small leakage in sol–gel derived Bi(Zn1/2Zr1/2)O3–PbTiO3ferroelectric thin films

2013 ◽  
Vol 42 (2) ◽  
pp. 585-590 ◽  
Author(s):  
Linxing Zhang ◽  
Jun Chen ◽  
Hanqing Zhao ◽  
Longlong Fan ◽  
Yangchun Rong ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Large Remanent Polarization

Structure and Device Characteristics of SrBi2Ta2O9-Based Nonvolatile Random-Access Memories

MRS Bulletin ◽  
1996 ◽  
Vol 21 (7) ◽  
pp. 33-39 ◽  
Author(s):  
J.F. Scott ◽  
F.M. Ross ◽  
C.A. Paz de Araujo ◽  
M.C. Scott ◽  
M. Huffman
Keyword(s):  
Lead Zirconate Titanate ◽  
Barium Strontium Titanate ◽  
Paradigm Shift ◽  
Random Access ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Barium Strontium ◽  
Stored Information ◽  
Ferroelectric Random Access Memories ◽  
Ferroelectric Capacitors

Recently there has been a paradigm shift in nonvolatile computer memories from silicon-technology-based EEPROMs (electrically erasable, programmable read-only memories) to devices in which the stored information is coded into + and − polarizations in thin-film ferroelectric capacitors. Such devices have read and erase/rewrite speeds of the order of 1–35 ns, many orders of magnitude faster than the erase/rewrite speeds of the best EEPROMs (Table I). However, fundamental questions concerning their lifetimes had delayed full commercialization. Because ferroelectrics normally have extremely large dielectric constants, their use as nonswitching capacitors in dynamic random-access memories (DRAMs) is also rapidly evolving. The majority of studies to date have emphasized lead zirconate titanate (PZT)-based capacitors for nonvolatile ferroelectric random-access memories (NVFRAMs) and barium strontium titanate-based capacitor DRAMs (see Table II).

Large Remanent Polarization of Pm2O3-Doped Bi4Ti3O12 Films

2013 ◽  
Vol 591 ◽  
pp. 104-107
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Remanent Polarization ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics

Pm-doped bismuth titanate (Pm4-xLaxTi3O12: BPT) and pure Bi4Ti3O12(BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25, 1.0, and 1.25, the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75, the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Fims with x=0.75 were above 40μC/cm2 and 60KV/cm , respectively.

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