Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures
2011 ◽
Vol 29
(2)
◽
pp. 021002
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1998 ◽
Vol 16
(5)
◽
pp. 2725
2001 ◽
Vol 48
(7)
◽
pp. 1290-1296
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2007 ◽
Vol 17
(01)
◽
pp. 85-89
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2018 ◽
Vol 57
(4S)
◽
pp. 04FG02
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Keyword(s):
2001 ◽
Vol 40
(Part 1, No. 3A)
◽
pp. 1188-1193
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2017 ◽
1997 ◽
Vol 15
(5)
◽
pp. 1773
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