Contact resistance degradation of Pd/Ge ohmic contact on pseudomorphic high electron mobility transistor

1998 ◽  
Vol 16 (5) ◽  
pp. 2725
Author(s):  
Jong-Lam Lee
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Resistance Degradation

Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures

2014 ◽  
Vol 61 (4) ◽  
pp. 265-270 ◽  
Author(s):  
Y. Takei ◽  
M. Okamoto ◽  
W. Saito ◽  
K. Tsutsui ◽  
K. Kakushima ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Algan Layer ◽  
High Electron Mobility

Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer

2007 ◽  
Vol 17 (01) ◽  
pp. 85-89 ◽  
Author(s):  
Yunju Sun ◽  
Lester F. Eastman
Keyword(s):  
Contact Resistance ◽  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistor ◽  
Metal Contact ◽  
High Electron ◽  
Transfer Resistance ◽  
High Electron Mobility ◽  
Hemt Structure ◽  
Gan Hemts

A significant improvement of contact transfer resistance on undoped GaN/AlGaN/AlN (10 Å)/ GaN high electron mobility transistor (HEMT) structure was demonstrated using a Ta/Ti/Al/Mo/Au metallization scheme compared to a Ti/Al/Mo/Au metallization scheme. A contact resistance as low as 0.16 ± 0.03 ohm - mm was achieved by rapid thermal annealing of evaporated Ta (125 Å)/ Ti (150 Å)/ Al (900 Å)/ Mo (400 Å)/ Au (500 Å) metal contact at 700 °C for 1 min followed by 800 °C for 30 sec in a N 2 ambient. An excellent edge acuity was also demonstrated for the annealed Ta/Ti/Al/Mo/Au ohmic contacts.

Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor

2004 ◽  
Vol 84 (20) ◽  
pp. 3996-3998 ◽  
Author(s):  
K. Nishizono ◽  
M. Okada ◽  
M. Kamei ◽  
D. Kikuta ◽  
K. Tominaga ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Doped Zno

AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact

2001 ◽  
Vol 40 (Part 1, No. 3A) ◽  
pp. 1188-1193 ◽  
Author(s):  
Jong-Lam Lee ◽  
Yi-Tae Kim ◽  
Jung-Woo Oh ◽  
Byung-Teak Lee
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility
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