Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors

2011 ◽  
Vol 29 (3) ◽  
pp. 031211 ◽  
Author(s):  
Chien-Fong Lo ◽  
T. S. Kang ◽  
L. Liu ◽  
F. Ren ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Blocking Voltage

AlGaAs/InGaAs High-Electron Mobility Transistors Fabricated Using Silicon Nitride Passivation and Selective-Etching Process

2021 ◽  
Vol 13 (4) ◽  
pp. 638-641
Author(s):  
Yu-Shyan Lin ◽  
Chun-Cheng Lin
Keyword(s):  
Silicon Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Current Gain ◽  
High Electron ◽  
High Electron Mobility ◽  
Power Characteristics ◽  
Electron Mobility Transistors ◽  
Selective Etch ◽  
Recessed Gate

AlGaAs/InGaAs high-electron mobility transistors (HEMTs) are grown by molecular beam epitaxy (MBE). The studied HEMTs use two AlAs layers as etch-stop layers in the selective-etch recessed-gate fabrication of the HEMTs. The influence of passivation using silicon nitride on HEMTs is examined. Passivation improves the dc, high-frequency, and power characteristics of AlGaAs/InGaAs HEMTs. The passivated HEMT has a maximum extrinsic transconductance of 207 mS/mm, a unity-current-gain frequency (fT) of 13 GHz, and a maximum oscillation frequency (fmax) of 26 GHz. Furthermore, the variation of dc characteristics of the passivated HEMT with temperature is reduced.

GaN‐on‐silicon high electron mobility transistors with blocking voltage of 3 kV

2015 ◽  
Vol 51 (19) ◽  
pp. 1532-1534 ◽  
Author(s):  
N. Herbecq ◽  
I. Roch‐Jeune ◽  
A. Linge ◽  
B. Grimbert ◽  
M. Zegaoui ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Blocking Voltage

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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