0.12 µm Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon–Nitride-Assisted Process

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Chemical Vapor Deposited

Low Static and Dynamic On‐Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond

physica status solidi (a) ◽

10.1002/pssa.201900815 ◽

2020 ◽

Vol 217 (7) ◽

pp. 1900815

Author(s):

Kumud Ranjan ◽

Abhinay Sandupatla ◽

Subramaniam Arulkumaran ◽

Geok Ing Ng

Keyword(s):

Electron Mobility ◽

Figure Of Merit ◽

Chemical Vapor ◽

High Electron ◽

High Electron Mobility ◽

Chemical Vapor Deposited ◽

High Figure

Passivation Effects of 100 nm In0.4AlAs/In0.35GaAs Metamorphic High-Electron-Mobility Transistors with a Silicon Nitride Layer by Remote Plasma-Enhanced Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2341 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2341-2343 ◽

Cited By ~ 5

Author(s):

Sungwon Kim ◽

Kyoungchul Jang ◽

Gyungseon Seol ◽

Jincherl Her ◽

Kwangseok Seo

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

Nitride Layer ◽

High Electron ◽

High Electron Mobility ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Dry etching bilayer and trilevel resist systems for submicron gate length GaAs based high electron mobility transistors for power and digital applications

10.1116/1.585949 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2949 ◽

Cited By ~ 9

Author(s):

F. Ren

Keyword(s):

Electron Mobility ◽

Dry Etching ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Numerical performance evaluation of AlGaN/GaN high electron mobility transistors including gate length effects

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2009.04.026 ◽

2009 ◽

Vol 41 (8) ◽

pp. 1517-1521 ◽

Cited By ~ 6

Author(s):

Z. Hashempour ◽

A. Asgari ◽

S. Nikipar ◽

M. Abolhasani ◽

M. Kalafi

Keyword(s):

Performance Evaluation ◽

Electron Mobility ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Numerical Performance ◽

Length Effects

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors

10.1116/1.3593002 ◽

2011 ◽

Vol 29 (3) ◽

pp. 031211 ◽

Cited By ~ 8

Author(s):

Chien-Fong Lo ◽

T. S. Kang ◽

L. Liu ◽

F. Ren ◽

S. J. Pearton ◽

...

Keyword(s):

Silicon Nitride ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Blocking Voltage

Effect of Gate Length on the Electrical Characteristics of Nanoelectronic AlGaN/GaN High Electron Mobility Transistors to Fabricate the Biomedical Sensors in Nanoelectronics

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2018.2361 ◽

2018 ◽

Vol 13 (8) ◽

pp. 1123-1127 ◽

Cited By ~ 1

Author(s):

Sanjib Kalita ◽

Subhadeep Mukhopadhyay

Keyword(s):

Electron Mobility ◽

Gate Length ◽

High Electron ◽

Electrical Characteristics ◽

High Electron Mobility ◽

Biomedical Sensors ◽

Gate Length Scaling Effect on High-Electron Mobility Transistors Devices Using AlGaN/GaN and AlInN/AlN/GaN Heterostructures

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.8726 ◽

2014 ◽

Vol 14 (8) ◽

pp. 6243-6246 ◽

Cited By ~ 2

Author(s):

S. Y. Liao ◽

C. C. Lu ◽

T. Chang ◽

C. F. Huang ◽

C. H. Cheng ◽

...

Keyword(s):

Electron Mobility ◽

Gate Length ◽

High Electron ◽

Scaling Effect ◽

High Electron Mobility ◽

Length Scaling

Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

physica status solidi (a) ◽

10.1002/pssa.201900760 ◽

2020 ◽

Vol 217 (7) ◽

pp. 1900760

Author(s):

Eric Frayssinet ◽

Luan Nguyen ◽

Marie Lesecq ◽

Nicolas Defrance ◽

Maxime Garcia Barros ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Chemical Vapor ◽

Vapor Phase Epitaxy ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

High-Power-Density 0.25 µm Gate-Length AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating 6H–SiC Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.13 ◽

2006 ◽

Vol 45 (1A) ◽

pp. 13-17 ◽

Cited By ~ 17

Author(s):

J.-W. Lee ◽

V. Kumar ◽

I. Adesida

Keyword(s):

Power Density ◽

High Power ◽

Electron Mobility ◽

Gate Length ◽

High Electron ◽

High Power Density ◽

High Electron Mobility ◽

Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length

Journal of Applied Physics ◽

10.1063/1.353341 ◽

1993 ◽

Vol 73 (2) ◽

pp. 804-812 ◽

Cited By ~ 23

Author(s):

P. Dollfus ◽

C. Bru ◽

P. Hesto

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Mobility ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Physical Limitations