Room temperature plasma enhanced atomic layer deposition for TiO2and WO3films

2016 ◽  
Vol 34 (1) ◽  
pp. 01A118 ◽  
Author(s):  
Alexander Strobel ◽  
Hans-Dieter Schnabel ◽  
Ullrich Reinhold ◽  
Sebastian Rauer ◽  
Andreas Neidhardt
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Temperature Plasma ◽  
Layer Deposition

scholarly journals Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration

2017 ◽  
Vol 326 ◽  
pp. 281-290 ◽  
Author(s):  
Mari Napari ◽  
Manu Lahtinen ◽  
Alexey Veselov ◽  
Jaakko Julin ◽  
Erik Østreng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Zno Film ◽  
Temperature Plasma ◽  
Reactor Configuration ◽  
Layer Deposition

Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma

2015 ◽  
Vol 3 (19) ◽  
pp. 4848-4851 ◽  
Author(s):  
Matthias M. Minjauw ◽  
Jolien Dendooven ◽  
Boris Capon ◽  
Marc Schaekers ◽  
Christophe Detavernier
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Temperature Plasma ◽  
Layer Deposition

A plasma enhanced ALD process for Ru using RuO4 and H2-plasma is reported at sample temperatures ranging from 50 °C to 100 °C.

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

A Selective BP/Si Contact Formed by Low-Temperature Plasma-Enhanced Atomic Layer Deposition

2021 ◽  
Vol 47 (1) ◽  
pp. 96-98
Author(s):  
A. S. Gudovskikh ◽  
D. A. Kudryashov ◽  
A. I. Baranov ◽  
A. V. Uvarov ◽  
I. A. Morozov
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Layer Deposition

ZnO Schottky Nanodiodes Processed From Plasma-Enhanced Atomic Layer Deposition at Near Room Temperature

2018 ◽  
Vol 65 (10) ◽  
pp. 4513-4519
Author(s):  
Mei Shen ◽  
Triratna P. Muneshwar ◽  
Kenneth C. Cadien ◽  
Ying Yin Tsui ◽  
Douglas W. Barlage
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Study on fabrication method of composite oxide by room temperature atomic layer deposition

Impact ◽  
2020 ◽  
Vol 2020 (5) ◽  
pp. 16-18
Author(s):  
Fumihiko Hirose
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Graduate School ◽  
Room Temperature ◽  
Atomic Layer ◽  
Science And Engineering ◽  
Layer Deposition ◽  
Potential Applications ◽  
Properties Of Materials ◽  
Conducting Research

Thin films can be used to improve the surface properties of materials, enhancing elements such as absorption, abrasion resistance and corrosion resistance, for example. These thin films provide the foundation for a variety of applications in various fields and their applications depend on their morphology and stability, which is influenced by how they are deposited. Thin films can be deposited in different ways. One of these is a technology called atomic layer deposition (ALD). Professor Fumihiko Hirose, a scientist based at the Graduate School of Science and Engineering, Yamagata University, Japan, is conducting research on the room temperature ALD of oxide metals. Along with his team, Professor Hirose has developed a new and improved way of performing ALD to create thin films, and the potential applications are endless.

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