scholarly journals Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration

2017 ◽  
Vol 326 ◽  
pp. 281-290 ◽  
Author(s):  
Mari Napari ◽  
Manu Lahtinen ◽  
Alexey Veselov ◽  
Jaakko Julin ◽  
Erik Østreng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Zno Film ◽  
Temperature Plasma ◽  
Reactor Configuration ◽  
Layer Deposition

scholarly journals SiO2 thin film growth through a pure atomic layer deposition technique at room temperature

RSC Advances ◽  
2020 ◽  
Vol 10 (31) ◽  
pp. 18073-18081
Author(s):  
D. Arl ◽  
V. Rogé ◽  
N. Adjeroud ◽  
B. R. Pistillo ◽  
M. Sarr ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Deposition Technique ◽  
Sio2 Thin Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Technique

In this study, less contaminated and porous SiO2 films were grown via ALD at room temperature.

Room temperature plasma enhanced atomic layer deposition for TiO2and WO3films

2016 ◽  
Vol 34 (1) ◽  
pp. 01A118 ◽  
Author(s):  
Alexander Strobel ◽  
Hans-Dieter Schnabel ◽  
Ullrich Reinhold ◽  
Sebastian Rauer ◽  
Andreas Neidhardt
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Temperature Plasma ◽  
Layer Deposition

Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma

2015 ◽  
Vol 3 (19) ◽  
pp. 4848-4851 ◽  
Author(s):  
Matthias M. Minjauw ◽  
Jolien Dendooven ◽  
Boris Capon ◽  
Marc Schaekers ◽  
Christophe Detavernier
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Temperature Plasma ◽  
Layer Deposition

A plasma enhanced ALD process for Ru using RuO4 and H2-plasma is reported at sample temperatures ranging from 50 °C to 100 °C.

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

Preparation on ZnO film by Atomic Layer Deposition

1999 ◽  
Vol 169-170 ◽  
pp. 159-162 ◽  
Author(s):  
K. Kobayashi ◽  
S. Okudaira ◽  
Yuuki Ishida
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Film ◽  
Layer Deposition
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