Mechanical properties and oxidation behavior of ZrNx thin films fabricated through high-power impulse magnetron sputtering deposition

2016 ◽  
Vol 34 (2) ◽  
pp. 02D107 ◽  
Author(s):  
Li-Chun Chang ◽  
Ching-Yen Chang ◽  
Yung-I Chen ◽  
Hsuan-Ling Kao
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
High Power ◽  
Oxidation Behavior ◽  
Sputtering Deposition

Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Anis Suhaili Bakri ◽  
Nafarizal Nayan ◽  
Chin Fhong Soon ◽  
Mohd Khairul Ahmad ◽  
Ahmad Shuhaimi Abu Bakar ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Young’S Modulus ◽  
Plasma Deposition ◽  
Young's Modulus ◽  
Rf Magnetron Sputtering ◽  
Content Type ◽  
Sputtering Deposition ◽  
Atomic Force

Purpose This paper aims to report the influence of sputtering plasma deposition time on the structural and mechanical properties of the a-axis oriented aluminium nitride (AlN) thin films. Design/methodology/approach The AlN films were prepared using RF magnetron sputtering plasma on a silicon substrate without any external heating with various deposition times. The films were characterized using X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), atomic force microscope (AFM) and nanoindentation techniques. Findings The XRD results show that the AlN thin films are highly oriented along the (100) AlN plane at various deposition times indicating the a-axis preferred orientation. All the AlN thin films exhibit hexagonal AlN with a wurtzite structure. The hardness and Young’s modulus of AlN thin films with various deposition times were measured using a nanoindenter. The measured hardness of the AlN films on Si was in the range of 14.1 to 14.7 GPa. The surface roughness and the grain size measured using the AFM revealed that both are dependent on the deposition times. Originality/value The novelty of this work lies with a comparison of hardness and Young’s modulus result obtained at different sputtering deposition temperature. This study also provides the relation of AlN thin films’ crystallinity with the hardness of the deposited films.

Pulse synchronized substrate bias for the High Power Pulsed Magnetron Sputtering deposition of CrAlN

2021 ◽  
pp. 138792
Author(s):  
K. Bobzin ◽  
T. Brögelmann ◽  
N.C. Kruppe ◽  
M. Engels ◽  
C. Schulze
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Substrate Bias ◽  
Sputtering Deposition ◽  
Pulsed Magnetron

scholarly journals High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Voltage ◽  
High Power ◽  
Power Supply ◽  
Indium Tin Oxide ◽  
Volume Ratio ◽  
Cold Spraying ◽  
High Voltage Power Supply ◽  
Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

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