Quantitative study of chemical mechanical planarization process affected by bare silicon wafer front surface topography

1999 ◽  
Vol 17 (5) ◽  
pp. 2210
Author(s):  
C. Shan Xu ◽  
Jerry Liu ◽  
Yong Xia
Keyword(s):  
Surface Topography ◽  
Silicon Wafer ◽  
Quantitative Study ◽  
Chemical Mechanical Planarization ◽  
Front Surface ◽  
Planarization Process

Novel Measurement Technique on 3D Surface Topography of Polishing Pad

2008 ◽  
Vol 53-54 ◽  
pp. 265-272
Author(s):  
Dong Ming Guo ◽  
N. Qin ◽  
Ren Ke Kang ◽  
Zhu Ji Jin
Keyword(s):  
Surface Topography ◽  
Chemical Mechanical Planarization ◽  
Sampling Interval ◽  
3D Measurement ◽  
Sampling Area ◽  
Polishing Pad ◽  
3D Surface ◽  
3D Surface Topography ◽  
Planarization Process ◽  
Polishing Pads

Among the properties of polishing pad, the surface roughness plays a crucial role in CMP (Chemical Mechanical Planarization) process. However, there is no acknowledged standard for measuring and characterizing the roughness of pad surface in 3D measurement. In this paper Talysurf CLI 2000 working on the principle of dynamic confocal measurement was initially suggested to measure the 3D surface topography of polishing pads through theoretical and experimental analysis. In addition, based on the Nyquist folding frequency and the statistical theory, a selection technique for sampling interval and sampling area was proposed and verified through experiments. The results showed that Talysurf CLI 2000 is more suitable than NewView to measure the 3D surface topography of polishing pads. 2μm sampling interval, 0.5×0.5mm2 sampling area and 10μm interval, 1×1mm2 area are respectively recommended for IC1000/SubaIV and SubaIV polishing pad.

Advances in Chemical-Mechanical Planarization

MRS Bulletin ◽  
2002 ◽  
Vol 27 (10) ◽  
pp. 743-751 ◽  
Author(s):  
Rajiv K. Singh ◽  
Rajeev Bajaj
Keyword(s):  
Surface Topography ◽  
Process Integration ◽  
Semiconductor Industry ◽  
Chemical Mechanical Planarization ◽  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Fundamental Understanding ◽  
Copper Polishing ◽  
Future Growth

AbstractThe primary aim of this issue of MRS Bulletin is to present an overview of the materials issues in chemical–mechanical planarization (CMP), also known as chemical–mechanial polishing, a process that is used in the semiconductor industry to isolate and connect individual transistors on a chip. The CMP process has been the fastest-growing semiconductor operation in the last decade, and its future growth is being fueled by the introduction of copper-based interconnects in advanced microprocessors and other devices. Articles in this issue range from providing a fundamental understanding of the CMP process to the latest advancements in the field. Topics covered in these articles include an overview of CMP, fundamental principles of slurry design, understanding wafer–pad–slurry interactions, process integration issues, the formulation of abrasive-free slurries for copper polishing, understanding surface topography issues in shallow trench isolation, and emerging applications.

Investigation of cu-BTA complex formation during Cu chemical mechanical planarization process

2016 ◽  
Vol 384 ◽  
pp. 505-510 ◽  
Author(s):  
Byoung-Jun Cho ◽  
Shohei Shima ◽  
Satomi Hamada ◽  
Jin-Goo Park
Keyword(s):  
Complex Formation ◽  
Chemical Mechanical Planarization ◽  
Planarization Process

Note: Evaluation of slurry particle size analyzers for chemical mechanical planarization process

2016 ◽  
Vol 87 (4) ◽  
pp. 046101 ◽  
Author(s):  
Sunjae Jang ◽  
Atul Kulkarni ◽  
Hongyi Qin ◽  
Taesung Kim
Keyword(s):  
Particle Size ◽  
Chemical Mechanical Planarization ◽  
Planarization Process

Analyses of Diamond Disk Substrate Wear and Diamond Microwear in Copper Chemical Mechanical Planarization Process

2010 ◽  
Vol 157 (3) ◽  
pp. H250 ◽  
Author(s):  
Anand Meled ◽  
Yun Zhuang ◽  
Xiaomin Wei ◽  
Jiang Cheng ◽  
Yasa Adi Sampurno ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Diamond Disk ◽  
Planarization Process ◽  
Disk Substrate
Sign in / Sign up

Export Citation Format

Share Document