As[sub 4] pressure dependence of surface segregation of indium atoms during molecular beam epitaxy of In[sub 0.08]Ga[sub 0.92]As/GaAs superlattices on (411)A GaAs substrates
2000 ◽
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(3)
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pp. 1579
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2007 ◽
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1993 ◽
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2000 ◽
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1999 ◽
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