Hf1−xZrxO2 and HfO2/ZrO2 gate dielectrics with extremely low density of interfacial defects using low temperature atomic layer deposition on GaN and InP

2021 ◽  
Vol 39 (3) ◽  
pp. 032407
Author(s):  
Kaveh Ahadi ◽  
Ken Cadien
RSC Advances ◽  
2016 ◽  
Vol 6 (20) ◽  
pp. 16301-16307 ◽  
Author(s):  
Kaveh Ahadi ◽  
Ken Cadien

Anomalous growth per cycle was observed using in situ ellipsometry during the initial cycles of plasma enhanced atomic layer deposition of high-κ dielectrics, while thermal atomic layer deposition of these oxides exhibited linear growth per cycle.


2001 ◽  
Vol 79 (5) ◽  
pp. 665-667 ◽  
Author(s):  
Anri Nakajima ◽  
Takashi Yoshimoto ◽  
Toshirou Kidera ◽  
Shin Yokoyama

2005 ◽  
Vol 86 (22) ◽  
pp. 222904 ◽  
Author(s):  
Satoshi Kamiyama ◽  
Takayoshi Miura ◽  
Yasuo Nara ◽  
Tsunetoshi Arikado

2015 ◽  
Vol 33 (4) ◽  
pp. 041512 ◽  
Author(s):  
Morteza Aghaee ◽  
Philipp S. Maydannik ◽  
Petri Johansson ◽  
Jurkka Kuusipalo ◽  
Mariadriana Creatore ◽  
...  

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