Hf1−xZrxO2 and HfO2/ZrO2 gate dielectrics with extremely low density of interfacial defects using low temperature atomic layer deposition on GaN and InP
2021 ◽
Vol 39
(3)
◽
pp. 032407
Keyword(s):
2017 ◽
Vol 9
(49)
◽
pp. 42928-42934
◽
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
2019 ◽
Vol 45
(6)
◽
pp. 7407-7412
◽
Keyword(s):
Keyword(s):
2015 ◽
Vol 33
(4)
◽
pp. 041512
◽
Keyword(s):