Room-temperature wide-range luminescence and structural, optical, and electrical properties of SILAR deposited Cu-Zn-S nano-structured thin films

2016 ◽  
Author(s):  
Edwin Jose ◽  
M.C. Santhosh Kumar
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Room Temperature ◽  
Optical And Electrical Properties ◽  
Wide Range

Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2–Ar sputtering gas mixture

2015 ◽  
Vol 344 ◽  
pp. 217-222 ◽  
Author(s):  
L. Álvarez-Fraga ◽  
F. Jiménez-Villacorta ◽  
J. Sánchez-Marcos ◽  
A. de Andrés ◽  
C. Prieto
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Gas Mixture ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films

Optimization of IGZO/Cu/IGZO Multilayers as Transparent Composite Electrode on Flexible Substrate by Room-temperature Sputtering and Post-Deposition Anneals

2013 ◽  
Vol 1577 ◽  
Author(s):  
Aritra Dhar ◽  
T. L. Alford
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Flexible Substrate ◽  
Middle Layer ◽  
Optical Transmittance ◽  
Optical And Electrical Properties ◽  
Composite Electrodes ◽  
Transparent Composite

ABSTRACTHighly transparent composite electrodes made of multilayers of In- and Ga-doped ZnO and Cu (IGZO/Cu/IGZO) thin films (30/3-9/30 nm thick) are deposited onto flexible substrates at room temperature and by using radio frequency magnetron sputtering. The effect of Cu thickness on the electrical and optical properties of the multilayer stack has been studied in accordance with the Cu morphology. The optical and electrical properties of the multilayers are studied with the UV–Vis spectrophotometry, Hall measurement and four point probe analyses. Results are compared with those from a single IGZO layered thin film. The average optical transmittance and sheet resistance both decreases with increase of copper thickness and has been optimized at 6 nm Cu middle layer thickness. The Haacke figure of merit (FOM) has been calculated to evaluate the performance of the films. The highest FOM achieved is 6 x 10-3 Ω-1 for a Cu thickness of 6 nm with a sheet resistance of 12.2 Ω/sq and an average transmittance of 86%. The multilayered thin films are annealed upto 150 °C in vacuum, forming gas and O2 environments and the optical and electrical properties are studied and compared against the as-deposited samples. Thus IGZO/Cu/IGZO multilayer is a promising flexible electrode material for the next-generation flexible optoelectronics.

scholarly journals Investigation of the Structural, Optical and Electrical Properties of AgInSe2 Thin Films

2018 ◽  
Vol 31 (1) ◽  
pp. 37 ◽  
Author(s):  
Iman Hameed Khudayer ◽  
Bushra Hashem Hussein Ali ◽  
Mohammed Hamid Mustafa ◽  
Ayser Jumah Ibrahim
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Electrical Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Optical And Electrical Properties ◽  
X Ray ◽  
20 Nm

  The Silver1Indium1Selenide (AgInSe2) (AIS) thin1films of (3001±20) nm thickness  have been1prepared2from the compound alloys2using thermal evaporation2 technique onto the glass2substrate at room temperature, with a deposition rate2(3±0.1) nm2sec-1. The2structural, optical and electrical3properties have been studied3at different annealing3temperatures (Ta=450, 550 and 650) K. The amount3or (concentration) of the elements3(Ag, In, Se) in the  prepared alloy3was verified using  an energy dispersive3x-ray spectrometer (EDS)3technology. X-ray diffraction3analysis shows that AIS alloy  prepared as (powder) and the thin films3are polycrystalline  of tetragonal3structure with preferential orientation3(112). The crystalline3size increases  as a function3of annealing temperature. The atomic force3microscope (AFM) technique  was used to examine3the  topography  and  estimate3the surface roughness, also the  average grain3size of the films. The results show3that the grain size increases3with annealing3temperature.   The optical4band gap of the films lies4in the range 1.6-1.9 eV. The films4appear to be4n-type indicating that the electrons4as a dominant charge4carrier. The electrical conductivity4increases  with a corresponding4increase in annealing4temperature.  

scholarly journals Preparation of polymer thin film using as NH3 gas Sensor

2014 ◽  
Vol 11 (2) ◽  
pp. 598-604
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Gas Sensor ◽  
Organic Semiconductor ◽  
Glass Substrate ◽  
Room Temperature ◽  
Oxidative Polymerization ◽  
Optical And Electrical Properties ◽  
Polymer Thin Film

Polyaniline organic Semiconductor polymer thin films have been prepared by oxidative polymerization at room temperature, this polymer was deposited on glass substrate with thickness 900nm, FTIR spectra was tested , the structural,optical and electrical properties were studied through XRD ,UV-Vis ,IR measurements ,the results was appeared that polymer thin film sensing to NH3 gas.

Influences of the RF power ratio on the optical and electrical properties of GZO thin films by DC coupled RF magnetron sputtering at room temperature

2016 ◽  
Vol 503 ◽  
pp. 111-116 ◽  
Author(s):  
Shou Peng ◽  
Tingting Yao ◽  
Yong Yang ◽  
Kuanxiang Zhang ◽  
Jiwen Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Power Ratio ◽  
Optical And Electrical Properties ◽  
Rf Power

Influence of sputtering conditions on the optical and electrical properties of laser-annealed and wet-etched room temperature sputtered ZnO:Al thin films

2014 ◽  
Vol 555 ◽  
pp. 13-17 ◽  
Author(s):  
Rym Boukhicha ◽  
Coralie Charpentier ◽  
Patricia Prod'Homme ◽  
Pere Roca i Cabarrocas ◽  
Jean-François Lerat ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Room Temperature ◽  
Optical And Electrical Properties
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