Design and application of photonic devices based on photonic crystal near Dirac point

2018 ◽  
Author(s):  
Guoyan Dong
Keyword(s):  
Photonic Crystal ◽  
Dirac Point ◽  
Photonic Devices ◽  
Design And Application

Design of Dirac-point photonic crystal quantum cascade lasers

2017 ◽  
Author(s):  
Yong Liang ◽  
Zhixin Wang ◽  
Xuefan Yin ◽  
Chao Peng ◽  
Weiwei Hu ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Dirac Point ◽  
Quantum Cascade Lasers ◽  
Quantum Cascade ◽  
Cascade Lasers

2D photonic crystal membrane surface operation micro-nano-scale photonic devices

2004 ◽  
Author(s):  
Pierre Viktorovitch ◽  
Jean Louis Leclercq ◽  
Xavier Letartre ◽  
Pedro Rojo-Romeo ◽  
Christian Seassal
Keyword(s):  
Photonic Crystal ◽  
Membrane Surface ◽  
Photonic Devices ◽  
Nano Scale ◽  
Photonic Crystal Membrane

Dirac Point and Cloaking Based on Honeycomb Lattice Photonic Crystal

2013 ◽  
Vol 6 (4) ◽  
pp. 042003 ◽  
Author(s):  
Hao Guo ◽  
Honggang Liu ◽  
Xiong Zhang ◽  
Hongjun Chen ◽  
Wenxing Liu ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Dirac Point ◽  
Honeycomb Lattice

scholarly journals Larger-area single-mode photonic crystal surface-emitting lasers enabled by an accidental Dirac point

2014 ◽  
Vol 39 (7) ◽  
pp. 2072 ◽  
Author(s):  
Song-Liang Chua ◽  
Ling Lu ◽  
Jorge Bravo-Abad ◽  
John D. Joannopoulos ◽  
Marin Soljačić
Keyword(s):  
Photonic Crystal ◽  
Dirac Point ◽  
Crystal Surface ◽  
Single Mode ◽  
Surface Emitting Lasers ◽  
Emitting Lasers

Two- and Three-Dimensional Photonic Crystals Built with VLSI Tools

MRS Bulletin ◽  
2001 ◽  
Vol 26 (8) ◽  
pp. 627-631 ◽  
Author(s):  
Shawn-Yu Lin ◽  
J.G. Fleming ◽  
E. Chow
Keyword(s):  
Photonic Crystal ◽  
Photonic Crystals ◽  
Integrated Circuit ◽  
Three Dimensional ◽  
Photonic Devices ◽  
Processing Technology ◽  
Photonic Crystal Slabs ◽  
The Creation ◽  
On Chip ◽  
Made In

The drive toward miniature photonic devices has been hindered by our inability to tightly control and manipulate light. Moreover, photonics technologies are typically not based on silicon and, until recently, only indirectly benefited from the rapid advances being made in silicon processing technology. In the first part of this article, the successful fabrication of three-dimensional (3D) photonic crystals using silicon processing will be discussed. This advance has been made possible through the use of integrated-circuit (IC) fabrication technologies (e.g., very largescale integration, VLSI) and may enable the penetration of Si processing into photonics. In the second part, we describe the creation of 2D photonic-crystal slabs operating at the λ = 1.55 μm communications wavelength. This class of 2D photonic crystals is particularly promising for planar on-chip guiding, trapping, and switching of light.

Prototyping of three-dimensional photonic crystal structures using electron-beam lithography

2004 ◽  
Vol 846 ◽  
Author(s):  
G. Subramania ◽  
J. M. Rivera
Keyword(s):  
Electron Beam ◽  
Photonic Crystal ◽  
Electron Beam Lithography ◽  
Near Infrared ◽  
Photonic Band Gap ◽  
Three Dimensional ◽  
Photonic Devices ◽  
Layer By Layer ◽  
Photonic Band Gap Structure ◽  
Band Gap Structure

ABSTRACTWe demonstrate the fabrication of a three-dimensional woodpile photonic crystal in the near-infrared regime using a layer-by-layer approach involving electron-beam lithography and spin-on-glass planarization. Using this approach we have shown that we can make structures with lattice spacings as small as 550 nm with silicon as well as gold thus allowing for fabrication of photonic crystals with omnidirectional gap in the visible and near-IR. As a proof of concept we performed optical reflectivity and transmission measurements on a silicon structure which reveal peaks and valleys expected for a photonic band gap structure. The approach described here can be scaled down to smaller lattice constants (down to ∼400 nm) and can also be used with a variety of materials (dielectric and metallic) thus enabling rapid prototyping full three-dimensional photonic bandgap based photonic devices in the visible.

Behaviors of the multiple interface states in photonic crystal heterostructure with frequency-dependent dielectric functions

2020 ◽  
pp. 2150053
Author(s):  
Xun Cui ◽  
Li-Ming Zhao ◽  
Yun-Song Zhou ◽  
Hai-Tao Yan
Keyword(s):  
Photonic Crystal ◽  
Dirac Point ◽  
Incident Angle ◽  
Energy Levels ◽  
Interface State ◽  
Interface States ◽  
Defect Band ◽  
Multiple Interface ◽  
Photonic Crystal Heterostructure ◽  
Sinusoidal Function

In this paper, Dirac point method is used to study the interface state of one-dimensional photonic crystal heterojunction [Formula: see text] containing dispersive materials GaAs. We found that the energy levels of the interface states satisfy a simple sinusoidal function. We investigate the variation of the energy levels of the interface states with the incident angle, it is found that these interface states move toward high-frequency with the increase of the incident angle. At the same time, it is found that there is an extra localized band and it is further proved that the extra band corresponds to the defect band, and the energy levels of the defect band possess the same behavior with those of interface states.

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