Hydrostatic pressure: a unique tool in studies of quantum structures and light emitting devices based on group-III nitrides

2006 ◽  
Author(s):  
T. Suski ◽  
G. Franssen ◽  
P. Perlin ◽  
H. Teisseyre ◽  
A. Kamińska
Keyword(s):  
Hydrostatic Pressure ◽  
Group Iii Nitrides ◽  
Quantum Structures ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices

Heteroepitaxy of GaN on Silicon: In Situ Measurements

2005 ◽  
Vol 483-485 ◽  
pp. 1051-1056
Author(s):  
A. Krost ◽  
Armin Dadgar ◽  
F. Schulze ◽  
R. Clos ◽  
K. Haberland ◽  
...  
Keyword(s):  
Low Cost ◽  
Group Iii Nitrides ◽  
In Situ Monitoring ◽  
Attractive Alternative ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Thermal Expansion Coefficients ◽  
Long Time

Due to the lack of GaN wafers, so far, group-III nitrides are mostly grown on sapphire or SiC substrates. Silicon offers an attractive alternative because of its low cost, large wafer area, and physical benefits such as the possibility of chemical etching, lower hardness, good thermal conductivity, and electrical conducting or isolating for light emitting devices or transistor structures, respectively. However, for a long time, a technological breakthrough of GaN-on-silicon has been thought to be impossible because of the cracking problem originating in the huge difference of the thermal expansion coefficients between GaN and silicon which leads to tensile strain and cracking of the layers when cooling down. However, in recent years, several approaches to prevent cracking and wafer bowing have been successfully applied. Nowadays, device-relevant thicknesses of crackfree group-III-nitrides can be grown on silicon. To reach this goal the most important issues were the identification of the physical origin of strains and its engineering by means of in situ monitoring during metalorganic vapor phase epitaxy.

scholarly journals Многообразие свойств приборных структур на основе нитридов элементов III группы, связанное с модификацией фрактально-перколяционной системы

2018 ◽  
Vol 52 (7) ◽  
pp. 804
Author(s):  
В.В. Емцев ◽  
Е.В. Гущина ◽  
В.Н. Петров ◽  
Н.А. Тальнишних ◽  
А.Е. Черняков ◽  
...  
Keyword(s):  
High Electron Mobility Transistor ◽  
Group Iii Nitrides ◽  
Growth Conditions ◽  
High Electron ◽  
Extended Defects ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Fractal Percolation ◽  
Gan Hemt

AbstractA fractal-percolation system that includes extended defects and random fluctuations in the alloy composition is formed during the growth of device structures based on Group-III nitrides. It is established that the specific features of this system are determined not only by the growth conditions. It is shown that the diversity of the electrical and optical properties of InGaN/GaN LEDs (light-emitting diodes) emitting at wavelengths of 450–460 and 519–530 nm, as well as that of the electrical properties of AlGaN/GaN HEMT (high-electron-mobility transistor) structures, is due to modification of the properties of the fractal-percolation system both during the growth process and under the action of the injection current and irradiation. The influence exerted by these specific features on the service life of light-emitting devices and on the reliability of AlGaN/GaN HEMT structures is discussed.

Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

2001 ◽  
Vol 171 (8) ◽  
pp. 857 ◽  
Author(s):  
Igor L. Krestnikov ◽  
V.V. Lundin ◽  
A.V. Sakharov ◽  
D.A. Bedarev ◽  
E.E. Zavarin ◽  
...  
Keyword(s):  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices

Group III nitride-based UV light emitting devices

2003 ◽  
Vol 195 (3) ◽  
pp. 491-495 ◽  
Author(s):  
H. Amano ◽  
S. Takanami ◽  
M. Iwaya ◽  
S. Kamiyama ◽  
I. Akasaki
Keyword(s):  
Uv Light ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Group Iii Nitride

Light emission versus energy gap in group-III nitrides: hydrostatic pressure studies

2003 ◽  
Vol 235 (2) ◽  
pp. 225-231 ◽  
Author(s):  
T. Suski ◽  
H. Teisseyre ◽  
S. P. Łepkowski ◽  
P. Perlin ◽  
H. Mariette ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Light Emission ◽  
Energy Gap ◽  
Group Iii Nitrides ◽  
Group Iii

scholarly journals Chlorine-Based Plasma Etching of GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
R. J. Shul ◽  
R. D. Briggs ◽  
S. J. Pearton ◽  
C. B. Vartuli ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Wide Band ◽  
Group Iii Nitrides ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Group Iii ◽  
Inductively Coupled ◽  
Group Iii Nitride

ABSTRACTThe wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 μm/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved etch quality of the group-III nitrides over more conventional reactive ion etch (RIE) systems.

The Evolution of Nitride Semiconductors

1997 ◽  
Vol 482 ◽  
Author(s):  
I. Akasaki
Keyword(s):  
Group Iii Nitrides ◽  
Research Society ◽  
Current Status ◽  
Nitride Semiconductors ◽  
Light Emitting ◽  
Group Iii ◽  
Commercial Success ◽  
Materials Research ◽  
Fundamental Research ◽  
Group Iii Nitride

AbstractThe great scientific and commercial success of the group-III nitrides in recent years is the result of persistent fundamental research over a time span of three decades. In the late 60's and in the early 70's the very heart of gallium nitride research was located in J.I. Pankove's laboratory at RCA. There the first single crystalline GaN was grown by Maruska and Tietjen and the very first GaN light emitting diodes were produced by Pankove in September 1971, 26 years ago. Since then the community of nitride research has come a long and troublesome way, but it has succeeded. This 1997 Fall Meeting Symposium on Nitride Semiconductors of the Materials Research Society is dedicated to Professor J.I. Pankove for his outstanding and groundbreaking contributions in the early development of group-III nitride research. This paper reports a historical summary of the evolution of the field summarizing the landmark contributions that have led to the current status of success.

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