scholarly journals Chlorine-Based Plasma Etching of GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
R. J. Shul ◽  
R. D. Briggs ◽  
S. J. Pearton ◽  
C. B. Vartuli ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Wide Band ◽  
Group Iii Nitrides ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Group Iii ◽  
Inductively Coupled ◽  
Group Iii Nitride

ABSTRACTThe wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 μm/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved etch quality of the group-III nitrides over more conventional reactive ion etch (RIE) systems.

AlGaN/GaN Based Heterostructures for MEMS and NEMS Applications

2010 ◽  
Vol 159 ◽  
pp. 27-38
Author(s):  
Volker Cimalla ◽  
C. C. Röhlig ◽  
V. Lebedev ◽  
Oliver Ambacher ◽  
Katja Tonisch ◽  
...  
Keyword(s):  
Microelectromechanical Systems ◽  
Longitudinal Vibration ◽  
Wide Band ◽  
Group Iii Nitrides ◽  
Vibration Modes ◽  
Wide Band Gap ◽  
Group Iii ◽  
Wide Band Gap Semiconductors ◽  
Dimensional Electron Gas ◽  
Group Iii Nitride

With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are receiving more attention. The outstanding properties of group III-nitrides offer many more possibilities for the implementation of new functionalities and a variety of technologies are available to realize group III-nitride based MEMS. In this work we demonstrate the application of these techniques for the fabrication of full-nitride MEMS. It includes a novel actuation and sensing principle based on the piezoelectric effect and employing a two-dimensional electron gas confined in AlGaN/GaN heterostructures as integrated back electrode. Furthermore, the actuation of flexural and longitudinal vibration modes in resonator bridges are demonstrated as well as their sensing properties.

Comparison Of Dry-Etch Techniques For Gan, Inn, And Ain

1997 ◽  
Vol 483 ◽  
Author(s):  
R. J. Shul ◽  
G. A. Vawter ◽  
C. G. Willison ◽  
M. M. Bridges ◽  
J. W. Lee ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
High Plasma ◽  
Group Iii ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Dry Etch

AbstractFabrication of group-III nitride devices relies on the ability to pattern features to depths ranging from ∼1000 Å to > 5 μm with anisotropic profiles, smooth morphologies, selective etching of one material over another, and a low degree of plasma-induced damage. In this study, GaN etch rates and etch profiles are compared using reactive ion etch (RIE), reactive ion beam etching (RIBE), electron cyclotron resonance (ECR), and inductively coupled plasma (ICP) etch systems. RIE yielded the slowest etch rates and sloped etch profiles despite dc-biases > −900 V. ECR and ICP etching yielded the highest rates with anisotropic profiles due to their high plasma flux and the ability to control ion energies independently of plasma density. RIBE etch results also showed anisotropic profiles with slower etch rates than either ECR or ICP possibly due to lower ion flux. InN and AIN etch characteristics are also compared using ICP and RIBE.

Dry and Wet Etching for Group III – Nitrides

1998 ◽  
Vol 537 ◽  
Author(s):  
I. Adesida ◽  
C. Youtsey ◽  
A. T. Ping ◽  
F. Khan ◽  
L. T. Romano ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Group Iii Nitrides ◽  
Device Fabrication ◽  
Wet Etching ◽  
Microwave Transistors ◽  
Group Iii ◽  
Inductively Coupled ◽  
Dislocation Densities ◽  
High Bond ◽  
Etch Rates

AbstractThe group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and highly anisotropic profiles obtained by inductively-coupled-plasma reactive ion etching are presented. Photoenhanced wet etching provides an alternative path to obtaining high etch rates without ion-induced damage. This method is shown to be suitable for device fabrication as well as for the estimation of dislocation densities in n-GaN. This has the potential of developing into a method for rapid evaluation of materials.

scholarly journals Group-III Nitride ETCH Selectivity IN BCl /Cl ICP Plasmas

1999 ◽  
Vol 4 (S1) ◽  
pp. 823-833 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
C. G. Willison ◽  
J. Han ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Plasma Chemistry ◽  
Optical Emission ◽  
Group Iii Nitrides ◽  
Plasma Etch ◽  
Source Power ◽  
Group Iii ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Coupled Plasmas

Patterning the group-III nitrides has been challenging due to their strong bond energies and relatively inert chemical nature as compared to other compound semiconductors. Plasma etch processes have been used almost exclusively to pattern these films. The use of high-density plasma etch systems, including inductively coupled plasmas (ICP), has resulted in relatively high etch rates (often greater than 1.0 µm/min) with anisotropic profiles and smooth etch morphologies. However, the etch mechanism is often dominated by high ion bombardment energies which can minimize etch selectivity. The use of an ICP-generated BCl3 /Cl2 plasma has yielded a highly versatile GaN etch process with rates ranging from 100 to 8000 Å/min making this plasma chemistry a prime candidate for optimization of etch selectivity. In this study, we will report ICP etch rates and selectivities for GaN, AlN, and InN as a function of BCl3/Cl2 flow ratios, cathode rf-power, and ICP-source power. GaN:InN and GaN:AlN etch selectivities were typically less than 7:1 and showed the strongest dependence on flow ratio. This trend may be attributed to faster GaN etch rates observed at higher concentrations of atomic Cl which was monitored using optical emission spectroscopy (OES).

scholarly journals Dry and Wet Etching for Group III – Nitrides

1999 ◽  
Vol 4 (S1) ◽  
pp. 38-48 ◽  
Author(s):  
I. Adesida ◽  
C. Youtsey ◽  
A. T. Ping ◽  
F. Khan ◽  
L. T. Romano ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Group Iii Nitrides ◽  
Device Fabrication ◽  
Wet Etching ◽  
Microwave Transistors ◽  
Group Iii ◽  
Inductively Coupled ◽  
Dislocation Densities ◽  
High Bond ◽  
Etch Rates

The group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and highly anisotropic profiles obtained by inductively-coupled-plasma reactive ion etching are presented. Photoenhanced wet etching provides an alternative path to obtaining high etch rates without ion-induced damage. This method is shown to be suitable for device fabrication as well as for the estimation of dislocation densities in n-GaN. This has the potential of developing into a method for rapid evaluation of materials.

The Evolution of Nitride Semiconductors

1997 ◽  
Vol 482 ◽  
Author(s):  
I. Akasaki
Keyword(s):  
Group Iii Nitrides ◽  
Research Society ◽  
Current Status ◽  
Nitride Semiconductors ◽  
Light Emitting ◽  
Group Iii ◽  
Commercial Success ◽  
Materials Research ◽  
Fundamental Research ◽  
Group Iii Nitride

AbstractThe great scientific and commercial success of the group-III nitrides in recent years is the result of persistent fundamental research over a time span of three decades. In the late 60's and in the early 70's the very heart of gallium nitride research was located in J.I. Pankove's laboratory at RCA. There the first single crystalline GaN was grown by Maruska and Tietjen and the very first GaN light emitting diodes were produced by Pankove in September 1971, 26 years ago. Since then the community of nitride research has come a long and troublesome way, but it has succeeded. This 1997 Fall Meeting Symposium on Nitride Semiconductors of the Materials Research Society is dedicated to Professor J.I. Pankove for his outstanding and groundbreaking contributions in the early development of group-III nitride research. This paper reports a historical summary of the evolution of the field summarizing the landmark contributions that have led to the current status of success.

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