Influence of electric-field-assisted thermal ionization on the formation of the schottky barrier between metal and amorphous silicon

2000 ◽  
Vol 34 (3) ◽  
pp. 300-304 ◽  
Author(s):  
P. N. Krylov
Keyword(s):  
Electric Field ◽  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Thermal Ionization

Transport parameters and electric field profile in amorphous silicon solar cells

1991 ◽  
Vol 23 (2-4) ◽  
pp. 273-281
Author(s):  
R. Könenkamp ◽  
S. Muramatsu ◽  
H. Itoh ◽  
S. Matsubara ◽  
T. Shimada
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Field Profile ◽  
Transport Parameters ◽  
Electric Field Profile

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 881-886 ◽  
Author(s):  
Hiroyuki Okino ◽  
Norifumi Kameshiro ◽  
Kumiko Konishi ◽  
Naomi Inada ◽  
Kazuhiro Mochizuki ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Current ◽  
Tunneling Current ◽  
Leakage Currents ◽  
Reverse Leakage Current ◽  
Low Leakage ◽  
Chip Size ◽  
Barrier Metal

The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field

2019 ◽  
Vol 30 (40) ◽  
pp. 405207 ◽  
Author(s):  
Hengheng Li ◽  
Zhongpo Zhou ◽  
Kelei Zhang ◽  
Haiying Wang
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Interlayer Distance

scholarly journals SiC trench MOSFET with integrated side-wall Schottky barrier diode having P+ electric field shield

2019 ◽  
Vol 16 (5) ◽  
pp. 20181135-20181135
Author(s):  
Bo Yi ◽  
Hao Hu ◽  
Jia Lin ◽  
Junji Cheng ◽  
Haimeng Huang ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Side Wall ◽  
Schottky Barrier Diode
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