Calculation of Performance of MEMS-Switch with Increased Capacitance Ratio

2020 ◽  
Vol 49 (4) ◽  
pp. 253-262
Author(s):  
I. V. Uvarov ◽  
N. V. Marukhin ◽  
P. S. Shlepakov ◽  
V. F. Lukichev
Keyword(s):  
Mems Switch ◽  
Capacitance Ratio

scholarly journals Design and Fabrication of a Ka Band RF MEMS Switch with High Capacitance Ratio and Low Actuation Voltage

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 37
Author(s):  
Kun Deng ◽  
Fuxing Yang ◽  
Yucheng Wang ◽  
Chengqi Lai ◽  
Ke Han
Keyword(s):  
Rf Mems ◽  
Dielectric Material ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Ka Band ◽  
High Capacitance ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
Metal Insulator Metal ◽  
State Capacitance

In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal (MIM) capacitors is employed on a signal line to improve the capacitance ratio, which will not degrade the switch reliability. To reduce the actuation voltage, a low spring constant bending folding beam and bilateral drop-down electrodes are designed in the MEMS switch. The paper analyzes the switch pull-in model and deduces the elastic coefficient calculation equation, which is consistent with the simulation results. The measured results indicated that, for the proposed MEMS switch with a gap of 2 μm, the insertion loss is better than −0.5 dB and the isolation is more than −20 dB from 25 to 35 GHz with an actuation voltage of 15.8 V. From the fitted results, the up-state capacitance is 6.5 fF, down-state capacitance is 4.3 pF, and capacitance ratios is 162. Compared with traditional MEMS capacitive switches with dielectric material Si3N4, the proposed MEMS switch exhibits high on/off capacitance ratios of 162 and low actuation voltage.

RF-MEMS Varactor With Minimal Contact

2004 ◽  
Author(s):  
Qin Shen ◽  
Ioannis Chasiotis ◽  
N. Scott Barker
Keyword(s):  
Rf Mems ◽  
Phase Shifters ◽  
Capacitive Switches ◽  
Intimate Contact ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
Matching Networks ◽  
Minimal Contact ◽  
Bottom Side

An innovative RF-MEMS varactor has been developed for use in distributed RF-MEMS circuits such as phase shifters and tunable matching networks where the capacitance ratio between on- and off- state must be limited to 2–10. By fabricating standoffs on the bottom side of the beam, this device eliminates the intimate contact between the FR-MEMS and dielectric, that is found in typical RF-MEMS beam capacitive switches. These standoffs limit the range of motion, allowing the capacitance ratio to be set, and also greatly reduces the contact area thus preventing stiction from occurring. The RF-MEMS switch has been fabricated with initial measurements demonstrating a capacitance ratio of 2.5. Preliminary reliability testing results demonstrate that this RF-MEMS design is very robust.

scholarly journals Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification

Micromachines ◽  
2018 ◽  
Vol 9 (8) ◽  
pp. 390 ◽  
Author(s):  
Ke Han ◽  
Xubing Guo ◽  
Stewart Smith ◽  
Zhongliang Deng ◽  
Wuyu Li
Keyword(s):  
Rf Mems ◽  
Coplanar Waveguide ◽  
Metal Insulator ◽  
High Capacitance ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
Metal Insulator Metal ◽  
Switch Design ◽  
And Performance ◽  
Metallic Membrane

This paper proposes a novel high-capacitance-ratio radio frequency micro-electromechanical systems (RF MEMS) switch. The proposed RF MEMS mainly consists of serpentine flexure MEMS metallic beam, comprised of coplanar waveguide (CPW) transmission line, dielectric and metal-insulator-metal (MIM) floating metallic membrane. Comparing the proposed high-capacitance-ratio MEMS switch with the ones in available literature, an acceptable insertion loss insulation, acceptable response time and high capacitance ratio (383.8) are achieved.

scholarly journals Design and Analysis of Shunt Configuration-Based RF MEMS Switch

2019 ◽  
Vol 8 (9) ◽  
pp. 2034-2039
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Beam Width ◽  
Switching Speed ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
State Capacitance

In this paper a shunt type RF MEMS switch design and analysis for tunable applications is presented. Switch works based on the electrostatic actuation principle. Theoretical calculated Switch parameters are compared with the electromechanical and electromagnetic simulation results. The effect of various materials like conductor and dielectrics & parameters like airgap, beam width on the electromechanical parameters of the switch is analyzed to get low pull-in voltage, high switching speed, better capacitance ratio, return loss, insertion loss, and isolation loss. The switch up and down state capacitance are 40.9fF and 4.45pF respectively. Down to up state capacitance ratio of this switch is 108.69. The designed switch has an actuation voltage of 32V. RF performance is simulated from 1-10GHz. In ON state switch has return loss of -35dB, insertion loss of -0.1dB. In the OFF-state switch has return loss of -1dB and an isolation loss of -11dB.

Optimization of Scattering Parameters through Numerical Investigation of One-bit RF MEMS Switch over Ku, K and Ka Band

2020 ◽  
Vol 12 ◽  
Author(s):  
Pampa Debnath ◽  
Ujjwal Mondal ◽  
Arpan Deyasi
Keyword(s):  
Transmission Line ◽  
Numerical Investigation ◽  
Line Width ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Ka Band ◽  
Mems Switch ◽  
Overlap Area

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

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