Specific Features of the Atomic Structure of Iron Silicide Nanocrystals in a Silicon Matrix

Modern surface analysis is based largely upon the use of ionizing radiation to probe the electronic and atomic structure of the surfaces physical and chemical makeup. In many of these studies the ionizing radiation used as the primary probe is found to induce changes in the structure and makeup of the surface, especially when electrons are employed. A number of techniques employ the phenomenon of radiation induced desorption as a means of probing the nature of the surface bond. These include Electron- and Photon-Stimulated Desorption (ESD and PSD) which measure desorbed ionic and neutral species as they leave the surface after the surface has been excited by some incident ionizing particle. There has recently been a great deal of activity in determining the relationship between the nature of chemical bonding and its susceptibility to radiation damage.

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Simulated Dark-Field Electron Micrographs of Point Defects and Organometallics

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100114621 ◽

1975 ◽

Vol 33 ◽

pp. 200-201

Author(s):

William Krakow

Keyword(s):

Electron Micrographs ◽

Point Defects ◽

Structure Determination ◽

Atomic Structure ◽

Image Interpretation ◽

Dark Field ◽

Field Electron ◽

Dark Field Microscopy ◽

Dark Field Electron

Tilted beam dark-field microscopy has been applied to atomic structure determination in perfect crystals, several synthesized molecules with heavy atcm markers and in the study of displaced atoms in crystals. Interpretation of this information in terms of atom positions and atom correlations is not straightforward. Therefore, calculated dark-field images can be an invaluable aid in image interpretation.

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Surface reconstructions of (001) cleaved GdBa2Cu3O7-δ

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010012093x ◽

1992 ◽

Vol 50 (1) ◽

pp. 106-107

Author(s):

H.W. Zandbergen ◽

M.R. McCartney

Keyword(s):

Electron Microscopy ◽

Copper Oxide ◽

Grain Boundaries ◽

Atomic Structure ◽

Oxygen Deficiency ◽

Surface Layers ◽

Layer Sequence ◽

Surface Reconstructions ◽

Good Agreement

Very few electron microscopy papers have been published on the atomic structure of the copper oxide based superconductor surfaces. Zandbergen et al. have reported that the surface of YBa2Cu3O7-δ was such that the terminating layer sequence is bulk-Y-CuO2-BaO-CuO-BaO, whereas the interruption at the grain boundaries is bulk-Y-CuO2-BaO-CuO. Bursill et al. reported that HREM images of the termination at the surface are in good agreement with calculated images with the same layer sequence as observed by Zandbergen et al. but with some oxygen deficiency in the two surface layers. In both studies only one or a few surfaces were studied.

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High-resolution electron microscopy of the atomic structure of some grain boundaries in Au

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100143663 ◽

1986 ◽

Vol 44 ◽

pp. 414-415

Author(s):

W. Krakow ◽

D. A. Smith

Keyword(s):

Atomic Structure ◽

High Resolution Electron Microscopy ◽

Image Features ◽

Image Feature ◽

Resolution Electron ◽

Tilt Boundaries ◽

Processing Techniques ◽

Atom Position ◽

Structure Configuration

The successful determination of the atomic structure of [110] tilt boundaries in Au stems from the investigation of microscope performance at intermediate accelerating voltages (200 and 400kV) as well as a detailed understanding of how grain boundary image features depend on dynamical diffraction processes variation with specimen and beam orientations. This success is also facilitated by improving image quality by digital image processing techniques to the point where a structure image is obtained and each atom position is represented by a resolved image feature. Figure 1 shows an example of a low angle (∼10°) Σ = 129/[110] tilt boundary in a ∼250Å Au film, taken under tilted beam brightfield imaging conditions, to illustrate the steps necessary to obtain the atomic structure configuration from the image. The original image of Fig. 1a shows the regular arrangement of strain-field images associated with the cores of ½ [10] primary dislocations which are separated by ∼15Å.

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Atomic structure imaging of the Si/SiO2 interface with high-resolution electron microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100143559 ◽

1986 ◽

Vol 44 ◽

pp. 390-391

Author(s):

J.L. Batstone ◽

J.M. Gibson ◽

Alice.E. White ◽

K.T. Short

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Atomic Structure ◽

High Resolution Electron Microscopy ◽

Medium Voltage ◽

Voltage Electron ◽

Resolution Electron ◽

Structural Image ◽

Electron Microscopes ◽

Point To Point

High resolution electron microscopy (HREM) is a powerful tool for the determination of interface atomic structure. With the previous generation of HREM's of point-to-point resolution (rpp) >2.5Å, imaging of semiconductors in only <110> directions was possible. Useful imaging of other important zone axes became available with the advent of high voltage, high resolution microscopes with rpp <1.8Å, leading to a study of the NiSi2 interface. More recently, it was shown that images in <100>, <111> and <112> directions are easily obtainable from Si in the new medium voltage electron microscopes. We report here the examination of the important Si/Si02 interface with the use of a JEOL 4000EX HREM with rpp <1.8Å, in a <100> orientation. This represents a true structural image of this interface.

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Morphology and atomic structure of segregated grain boundaries in Cu-Sb

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100121673 ◽

1992 ◽

Vol 50 (1) ◽

pp. 254-255

Author(s):

R. W. Fonda ◽

D. E. Luzzi

Keyword(s):

Grain Boundary ◽

Grain Boundaries ◽

Intergranular Fracture ◽

Atomic Structure ◽

Copper Alloys ◽

Polycrystalline Materials ◽

Grain Boundary Embrittlement ◽

Boundary Embrittlement

The properties of polycrystalline materials are strongly dependant upon the strength of internal boundaries. Segregation of solute to the grain boundaries can adversely affect this strength. In copper alloys, segregation of either bismuth or antimony to the grain boundary will embrittle the alloy by facilitating intergranular fracture. Very small quantities of bismuth in copper have long been known to cause severe grain boundary embrittlement of the alloy. The effect of antimony is much less pronounced and is observed primarily at lower temperatures. Even though moderate amounts of antimony are fully soluble in copper, concentrations down to 0.14% can cause grain boundary embrittlement.

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Atomic structure of stair rod misfit dislocations at the GaAs on Si(100) interface

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100174849 ◽

1990 ◽

Vol 48 (4) ◽

pp. 342-343

Author(s):

D. Gerthsen

Keyword(s):

Lattice Constant ◽

Atomic Structure ◽

Spherical Aberration ◽

Stacking Faults ◽

Misfit Dislocations ◽

Gaas On Si ◽

Thermal Expansion Coefficients ◽

Transmission Electron ◽

Intersection Line ◽

Oriented Parallel

The prospect of technical applications has induced a lot of interest in the atomic structure of the GaAs on Si(100) interface and the defects in its vicinity which are often studied by high resolution transmission electron microscopy. The interface structure is determined by the 4.1% lattice constant mismatch between GaAs and Si, the large difference between the thermal expansion coefficients and the polar/nonpolar nature of the GaAs on Si interface. The lattice constant mismatch is compensated by misfit dislocations which are characterized by a/2<110> Burgers vectors b which are oriented parallel or inclined on {111} planes with respect to the interface. Stacking faults are also frequently observed. They are terminated by partial dislocations with b = a/6<112> on {111} planes. In this report, the atomic structure of stair rod misfit dislocations is analysed which are located at the intersection line of two stacking faults at the interface.A very thin, discontinous film of GaAs has been grown by MBE on a Si(100) substrate. Fig.1.a. shows an interface section of a 27 nm wide GaAs island along [110] containing a stair rod dislocation. The image has been taken with a JEOL 2000EX with a spherical aberration constant Cs = 1 mm, a spread of focus Δz = 10 nm and an angle of beam convergence ϑ of 2 mrad.

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Quasiperiodic interfaces: HREM observations of grain and phase boundaries

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100174795 ◽

1990 ◽

Vol 48 (4) ◽

pp. 332-333

Author(s):

K. L. Merkle

Keyword(s):

Atomic Structure ◽

Direct Determination ◽

Lattice Parameter ◽

Atomic Scale ◽

Misfit Dislocations ◽

Oxide Systems ◽

Atomic Structures ◽

Periodic Arrays ◽

Parameter Ratio ◽

Metal Metal

The atomic structures of internal interfaces have recently received considerable attention, not only because of their importance in determining many materials properties, but also because the atomic structure of many interfaces has become accessible to direct atomic-scale observation by modem HREM instruments. In this communication, several interface structures are examined by HREM in terms of their structural periodicities along the interface.It is well known that heterophase boundaries are generally formed by two low-index planes. Often, as is the case in many fcc metal/metal and metal/metal-oxide systems, low energy boundaries form in the cube-on-cube orientation on (111). Since the lattice parameter ratio between the two materials generally is not a rational number, such boundaries are incommensurate. Therefore, even though periodic arrays of misfit dislocations have been observed by TEM techniques for numerous heterophase systems, such interfaces are quasiperiodic on an atomic scale. Interfaces with misfit dislocations are semicoherent, where atomically well-matched regions alternate with regions of misfit. When the misfit is large, misfit localization is often difficult to detect, and direct determination of the atomic structure of the interface from HREM alone, may not be possible.

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Nano-probe x-ray analysis and high-resolution imaging on planar defects in high-pressure synthesized infinite-layer superconductor

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171377 ◽

1994 ◽

Vol 52 ◽

pp. 728-729

Author(s):

Y. Y. Wang ◽

H. Zhang ◽

V. P. Dravid ◽

H. Zhang ◽

L. D. Marks ◽

...

Keyword(s):

High Pressure ◽

High Resolution ◽

Atomic Structure ◽

Emission Spectra ◽

High Resolution Electron Microscopy ◽

Planar Defects ◽

X Ray ◽

Infinite Layer ◽

Resolution Electron ◽

Resolution Imaging

Azuma et al. observed planar defects in a high pressure synthesized infinitelayer compound (i.e. ACuO2 (A=cation)), which exhibits superconductivity at ~110 K. It was proposed that the defects are cation deficient and that the superconductivity in this material is related to the planar defects. In this report, we present quantitative analysis of the planar defects utilizing nanometer probe xray microanalysis, high resolution electron microscopy, and image simulation to determine the chemical composition and atomic structure of the planar defects. We propose an atomic structure model for the planar defects.Infinite-layer samples with the nominal chemical formula, (Sr1-xCax)yCuO2 (x=0.3; y=0.9,1.0,1.1), were prepared using solid state synthesized low pressure forms of (Sr1-xCax)CuO2 with additions of CuO or (Sr1-xCax)2CuO3, followed by a high pressure treatment.Quantitative x-ray microanalysis, with a 1 nm probe, was performed using a cold field emission gun TEM (Hitachi HF-2000) equipped with an Oxford Pentafet thin-window x-ray detector. The probe was positioned on the planar defects, which has a 0.74 nm width, and x-ray emission spectra from the defects were compared with those obtained from vicinity regions.

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