CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

2007 ◽  
Vol 41 (11) ◽  
pp. 1345-1350 ◽  
Author(s):  
I. V. Sedova ◽  
O. G. Lyublinskaya ◽  
S. V. Sorokin ◽  
A. A. Sitnikova ◽  
A. A. Toropov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Znse Quantum Dot

InGaP-based InGaAs quantum dot solar cells with GaAs spacer layer fabricated using solid-source molecular beam epitaxy

2012 ◽  
Vol 101 (13) ◽  
pp. 133110 ◽  
Author(s):  
T. Sugaya ◽  
A. Takeda ◽  
R. Oshima ◽  
K. Matsubara ◽  
S. Niki ◽  
...  
Keyword(s):  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Dot Solar Cells ◽  
Spacer Layer

Room-Temperature Operation of In0.5Ga0.5As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 605-607 ◽  
Author(s):  
Tzer-En Nee ◽  
Nien-Tze Yeh ◽  
Po-Wen Shiao ◽  
Jen-Inn Chyi ◽  
Ching-Ting Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Gaas Substrates ◽  
Room Temperature Operation

InAs/GaAs quantum dot lasers with GaP strain-compensation layers grown by molecular beam epitaxy

2016 ◽  
Vol 213 (4) ◽  
pp. 958-964 ◽  
Author(s):  
Takeo Kageyama ◽  
Katsuyuki Watanabe ◽  
Quoc Huy Vo ◽  
Keizo Takemasa ◽  
Mitsuru Sugawara ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Strain Compensation ◽  
Gaas Quantum Dot

High-Power 1.3-$\mu$m Quantum-Dot Superluminescent Light-Emitting Diode Grown by Molecular Beam Epitaxy

2007 ◽  
Vol 19 (2) ◽  
pp. 109-111 ◽  
Author(s):  
S. K. Ray ◽  
T. L. Choi ◽  
K. M. Groom ◽  
H. Y. Liu ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
High Power ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Light Emitting
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