Piezoelectric interaction in controlling the effective electron temperature and the non-ohmic mobility characteristics in GaN and other III–V compounds at low lattice temperature

In a compound semiconductor that lacks inversion symmetry, the free electrons interact simultaneously with the piezoelectric and acoustic phonons. This combined interaction principally controls the electrical transport at low lattice temperatures. Again, at low temperatures, the electrons in some of the compounds may be significantly perturbed for comparatively low fields, say, even for a fraction of a Vcm−1 or so, which effectively seems to be high enough, and the material exhibits electrical nonlinearity. Such a perturbed ensemble then attains a field dependent effective electron temperature Te, which exceeds the lattice temperature TL. The relative importance of the piezoelectric interaction in controlling the field dependence of the effective electron temperature, and therefrom, the non-ohmic mobility characteristics have been analyzed here under the condition of low lattice temperature. The numerical results obtained for InSb, InAs, and GaN are studied in detail. When compared with the experiments, the results here seem to give the same qualitative picture with respect to the variation of the non-ohmic mobility with the electric field for the indium compounds. The results, being interesting, stimulate further work in the same field.