Ovine ill-thrift in Nova Scotia. 4. The survival at low oxygen partial pressure of fungi isolated from the contents of the ovine rumen

1972 ◽  
Vol 18 (7) ◽  
pp. 1119-1128 ◽  
Author(s):  
D. Brewer ◽  
J. M. Duncan ◽  
S. Safe ◽  
A. Taylor
Keyword(s):  
Carbon Dioxide ◽  
Nova Scotia ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Low Oxygen ◽  
Mucor Rouxii ◽  
Permanent Pasture ◽  
Method Of Determination ◽  
Partial Pressures

Aspergillus fumigatus, Mucor rouxii, and Sporormia minima have been isolated from the rumen contents of sheep grazing permanent pasture at Nappan, Nova Scotia. To determine the ability of these fungi to survive and grow at the low oxygen partial pressure present in the rumen, a method of determination of oxygen, nitrogen, and carbon dioxide has been developed. The lowest partial pressures of oxygen [Formula: see text] and nitrogen that could be detected were 0.0005 cm Hg and the precision of the determination was ±0.001 cm Hg. Carbon dioxide was determined with slightly less precision than achieved for oxygen and nitrogen. Using this method, respiration was detected in cultures of all the fungi named at [Formula: see text] Hg and growth was observed at [Formula: see text] Hg in the case of M. rouxii. It is concluded that all these fungi are capable of survival in the ovine rumen.

Cortical CO2 and O2 at high pressures of argon, nitrogen, helium, and oxygen

1965 ◽  
Vol 20 (6) ◽  
pp. 1249-1252 ◽  
Author(s):  
Peter B. Bennett
Keyword(s):  
Carbon Dioxide ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
High Pressures ◽  
Inert Gases ◽  
Inert Gas ◽  
Low Oxygen ◽  
Nitrogen Narcosis ◽  
Partial Pressures ◽  
Argon Mixture

In 37 chloralosed cats (45–50 mg/kg) exposed to increased pressures of argon, nitrogen, or helium between 8.67 and 10.8 atm abs in the presence of either 0.2 or 2.34 atm abs oxygen or oxygen alone, the cortical carbon dioxide was measured with a modified Severinghaus electrode and the cortical oxygen polarographically. In mixtures with an oxygen partial pressure of 2.34 atm abs, the cortical oxygen increased above controls. The greater the density of the mixture then, the less was the increase. The cortical carbon dioxide also increased, but conversely, the greater the density of the mixture the greater the increase in carbon dioxide. In mixtures of low oxygen partial pressures, the cortical oxygen was below control values whereas the carbon dioxide showed little change except for a slight increase with the heavier argon mixture. Inert gas narcosis, as indicated by depression of auditory induced cortical spikes, did not correlate with the changes in cortical carbon dioxide but with the inert gas itself. Increasing the oxygen partial pressure and the density of the mixture respired caused retention of brain carbon dioxide, which synergistically potentiated the narcosis. nitrogen narcosis; inert gases; depth intoxication; tissue carbon dioxide; tissue oxygen; brain Submitted on August 10, 1964

Tensile Properties and Creep Behavior of SiC-Based Fibers under Various Oxygen Partial Pressures

2005 ◽  
Vol 475-479 ◽  
pp. 1333-1336 ◽  
Author(s):  
Jan Ji Sha ◽  
J.S. Park ◽  
Tatsuya Hinoki ◽  
Akira Kohyama ◽  
J. Yu
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Tensile Properties ◽  
Creep Behavior ◽  
Elevated Temperatures ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
Sic Fibers ◽  
Partial Pressures ◽  
Ar Gas

Three kinds of atmospheres (air, highly-pure Ar and ultra highly-pure Ar gas) with different oxygen partial pressures were applied to investigate the tensile properties and creep behavior of SiC fibers such as Hi-NicalonTM and TyrannoTM-SA. These fibers were annealed and crept at elevated temperatures ranging from1273-1773 K in such environments. After annealing at 1773 K, the room temperature tensile strengths of SiC-based fibers decreased with decreasing the oxygen partial pressure and the near stoichiometric fiber TyrannoTM-SA shows excellent strength retention. At temperatures above the 1573 K, the creep resistance of SiC fibers evaluated by bending stress relaxation (BSR) method under high oxygen partial pressure was lower than that of in low oxygen partial pressure. The microstructural features on these fibers were examined by scanning electron microscopy (SEM) and X-ray diffraction (XRD).

scholarly journals Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Partial Pressures ◽  
Effect Of Oxygen ◽  
Parameter Dependent

Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4and Ag2Cu2O3phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K.

Role of Oxygen Vacancies on the Ferroelectric Properties of Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Chi Kong Kwok ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Vacancy Concentration ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Low Oxygen ◽  
Partial Pressures ◽  
Pzt Films

AbstractThe properties of ferroelectric thin films can be significantly influenced by the presence of point defects. The concentration of vacancies presented in these thin films is known to be one of the key parameters causing the degradation of these films when these films are subjected to polarization reversals.To study the effects of the vacancy concentration on the ferroelectric properties, sol gel PZT films and powders were annealed in different oxygen partial pressures. For the PZT films, the reduction of oxides to pure metals was not observed even with films annealed at 2×10−5 atmosphere of oxygen partial pressure. Samples annealed at low oxygen partial pressure (for instance, 10−3 and 2×10−5 atmosphere), which has more Pb and O2 depletions and consequently has more Pb and O2 vacancies, cannot be switched easily. The ratios of coercive field after and before fatigue increase as the defect concentrations of the annealed samples increase.

Si-N nanowire formation from Silicon nano and microparticles.

2003 ◽  
Vol 789 ◽  
Author(s):  
Chandana Rath ◽  
A. Pinyol ◽  
J. Farjas ◽  
P. Roura ◽  
E. Bertran
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Crystalline Silicon ◽  
Silica Layer ◽  
Whisker Formation ◽  
Low Oxygen ◽  
Partial Pressures ◽  
Precursor Material ◽  
Different Temperatures ◽  
First Time

ABSTRACTWe report silicon nitride whisker formation from hydrogenated amorphous silicon (a-Si:H) nanoparticles grown by PECVD for the first time. We compared the results with the kinetics of whisker formation from ball milled crystalline silicon (c-Si) microparticles. Whisker formation is analyzed at different temperatures (900–1440 °C) and oxygen partial pressures. At temperatures equal or above 1350 C and at low oxygen partial pressure we observe monocrystalline α-Si3N4 whiskers having 30–100 nm diameter and several microns length. By increasing the oxygen partial pressure, the structure of whiskers is completely changed, as shown by electron microscopy. In this case we observe α-Si3N4 whiskers covered by an amorphous silica layer at 1350 C. Finally, when the precursor material is silicon microparticles, thicker (170–330 nm) and longer whiskers are formed.

Stability of monoclinic and tetragonal zirconia at low oxygen partial pressure

2000 ◽  
Vol 15 (2) ◽  
pp. 377-381 ◽  
Author(s):  
Niels Mommer ◽  
Theresa Lee ◽  
John A. Gardner
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Angular Correlation ◽  
Perturbed Angular Correlation ◽  
Tetragonal Zirconia ◽  
Cubic Phase ◽  
Monoclinic Zirconia ◽  
Low Oxygen ◽  
Partial Pressures

We have found that both tetragonal and monoclinic zirconia annealed at temperaturess in the range of 1100 to 1300 °C in atmospheres of low oxygen partial pressures (down to 10−26 Pa) transform slowly to an apparently cubic phase. The transformation can be reversed by increasing the oxygen partial pressure sufficiently, i.e., exposing the sample to air again. These observations were made by 111In/Cd perturbed angular correlation (PAC) measurements of undoped zirconia samples. Upon annealing under various reducing atmospheres PAC spectra show a steadily increasing fraction of Cd probe atoms in a locally cubic environment with the fraction of probe atoms in tetragonal or monoclinic sites decreasing accordingly.

scholarly journals Magnesium protoporphyrin chelatase activity in Rhodopseudomonas spheroides. Studies with whole cells

1972 ◽  
Vol 127 (1) ◽  
pp. 97-106 ◽  
Author(s):  
A. Gorchein
Keyword(s):  
Protein Synthesis ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pure Oxygen ◽  
Low Oxygen ◽  
Anaerobic Conditions ◽  
Whole Cells ◽  
Partial Pressures ◽  
Deficient Medium ◽  
Rhodopseudomonas Spheroides

1. Whole cells of Rhodopseudomonas spheroides grown under semi-anaerobic conditions in the light incorporated magnesium into exogenous protoporphyrin when incubated with EDTA or the related chelators EGTA, N-(2-hydroxyethyl)-ethylenediamine-NN′N′- triacetate and trans-1,2-diaminocyclohexanetetra-acetate. 2. The reaction was demonstrated under anaerobic conditions in the light or at low oxygen partial pressure in the dark. Partial pressures of oxygen greater than 15% inhibited the reaction. 3. Cells grown under pure oxygen were completely inactive, but on adaptation to growth under low oxygen partial pressure (O2+N2, 5:95) the development of activity paralleled the synthesis of bacteriochlorophyll. 4. The reaction with normal cells did not require protein synthesis, but cells that had lost their activity by being illuminated in Mg2+-deficient medium did not recover it in the absence of protein synthesis. 5. The product of the reaction was magnesium protoporphyrin monomethyl ester. 6. Evidence is presented that insertion of magnesium is obligatorily coupled with methylation and it is concluded that the reaction is dependent on a multienzyme complex.

Systematic trends of YBa2Cu3O7−δ thin films post annealed in low oxygen partial pressures

1994 ◽  
Vol 9 (8) ◽  
pp. 1936-1945 ◽  
Author(s):  
S.Y. Hou ◽  
Julia M. Phillips ◽  
D.J. Werder ◽  
T.H. Tiefel ◽  
J.H. Marshall ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Low Oxygen ◽  
Normal State Resistivity ◽  
Film Properties ◽  
Ion Channeling ◽  
Partial Pressures ◽  
High Annealing ◽  
Wide Range ◽  
Different Characteristics

Systematic studies have been performed on 1000 Å YBa2Cu3O7−δ films produced by the BaF2 process and annealed in an oxygen partial pressure (Po2) range from 740 Torr to 10 mTorr as well as a temperature range from 600 to 1050 °C. The results show that while high quality films can be annealed in a wide range of oxygen partial pressure, they have different characteristics. In general, crystalline quality and Tc are optimized at high Po2 and high annealing temperature, while strong flux pinning and low normal state resistivity are achieved at lower values of both variables. Under optimized low Po2 conditions, an ion channeling Xmin of 6% is obtained on films as thick as 5000 Å. This study will serve as a useful guide to tailoring film properties to the application at hand.

Characterization of Ruo2 Films Prepared by Rf Reactive Magnetron Sputtering

1998 ◽  
Vol 541 ◽  
Author(s):  
Li-jian Meng ◽  
M.P. dos Santos
Keyword(s):  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Total Pressure ◽  
High Stress ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
Partial Pressures

AbstractRuthenium dioxide films have been prepared by rf reactive magnetron sputtering at different oxygen partial pressures and total sputtering pressures. The films have been characterized by scanning electron microscopy, X-ray diffraction and electrical conductivity. The films prepared at low oxygen partial pressure and total pressure show a strong preferred orientation along the [110] direction. As both pressures increased, the peak intensity decreases. All the films are subject to a compressive stress. As the total pressure is decreased and the oxygen partial pressure is increased, the stress increases. When the total pressure is lower than 6 × 10−3 mbar and the oxygen partial pressure is higher than 1 × 103 mbar, the films peeled off automatically from the substrate because of the high stress. The films prepared at high oxygen partial pressure and high total pressure have a rough surface and those prepared at low pressure show smooth surface. In this paper, these phenomena have been discussed. In addition, the electrical properties of the films are also discussed.

scholarly journals Structural, Electrical, and Optical Properties of Reactively Sputtered Ag-Cu-O Films

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna
Keyword(s):  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Crystallographic Structure ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Partial Pressures ◽  
Effect Of Oxygen

Thin films of silver-copper-oxide were deposited on glass substrates by RF magnetron sputtering of Ag80Cu20 target under various oxygen partial pressures in the range 5×10−3–8×10−2 Pa. The effect of oxygen partial pressure on the crystallographic structure and surface morphology and electrical and optical properties was systematically studied and the results were reported. The oxygen content in the films was correlated with the oxygen partial pressure maintained during the growth of the films. The films which formed at low oxygen partial pressure of 5×10−3 Pa were mixed in phase of Ag2Cu2O3 and Ag while those deposited at 2×10−2 Pa were grown with Ag2Cu2O3 and Ag2Cu2O4 phases. The films which formed at oxygen partial pressure of 2×10−2 Pa showed electrical resistivity of 2.3 Ωcm and optical band gap of 1.47 eV.

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