Implantation ionique à haute énergie du Si dans l'AsGa
Keyword(s):
We present a study of the implantations of 7 MeV Si ions into GaAs at a dose of 1014 ions/cm2. The depth profile of the ions is measured by secondary-ion mass spectroscopy. It is found to be in good agreement with a Monte Carlo calculation based on the Lindhard, Scharff and Schiott model of ion collisions in solids. The penetration depth of the Si ions is Rp = 3.38 μm, with a standard deviation ΔRp = 0.35 μm. The samples are annealed in a rapid annealing oven. A maximal activation of dopants is obtained with a temperature of 850 °C for 20 s. The resistivity and average mobility after this anneal are ρ = 3.48 × 10−3 Ω∙cm and μn = 2800 cm2∙V−1∙s−1. This suggests that the majority of ions are activated.
1972 ◽
Vol 27
(8-9)
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pp. 1239-1246
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2010 ◽
Vol 47
(8)
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pp. 739-753
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Keyword(s):
2009 ◽
Vol 152-153
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pp. 493-496
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2018 ◽
Vol 1
(1)
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pp. 30-34
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