SIMS Determination of MG+ and AS+ Range Profiles in Photoresist and Polyimide Implant Masks.

1989 ◽  
Vol 147 ◽  
Author(s):  
D. L. Dugger ◽  
M. B. Stern ◽  
T. M. Rubico
Keyword(s):  
Standard Deviation ◽  
Mass Spectroscopy ◽  
Range Data ◽  
Profile Data ◽  
Projected Range ◽  
Range Profile ◽  
P Type ◽  
Secondary Ion ◽  
Good Agreement

AbstractThe distribution of Mg+ (a p-type dopant for GaAs) and As+ (an p-type dopant for Si) implanted into both photoresist (PR) and polyimide (PI) have been determined experimentally. Range data of Mg ions at 200 keV and 300 keV and As ions at 150 keV have been measured by Secondary Ion Mass Spectroscopy (SIMS). SIMS values for the projected range Rp and the standard deviation ARp were compared to range profile data calculated using the Projected Range Algorithm (PRAL) of Biersack [1] as well as the standard LSS theory [2]. While the values for Rp calculated from the PRAL model generally agreed within 10% of the SIMS values, the calculations underestimated Rp for PR but were in good agreement for PI. The LSS calculations underestimated Rp in both materials.

Implantation ionique à haute énergie du Si dans l'AsGa

1987 ◽  
Vol 65 (8) ◽  
pp. 979-981
Author(s):  
A. Azelmad ◽  
J. F. Currie ◽  
A. Yelon ◽  
P. Sood
Keyword(s):  
Monte Carlo ◽  
Standard Deviation ◽  
Penetration Depth ◽  
Mass Spectroscopy ◽  
Monte Carlo Calculation ◽  
Ion Collisions ◽  
Rapid Annealing ◽  
Maximal Activation ◽  
Secondary Ion ◽  
Good Agreement

We present a study of the implantations of 7 MeV Si ions into GaAs at a dose of 1014 ions/cm2. The depth profile of the ions is measured by secondary-ion mass spectroscopy. It is found to be in good agreement with a Monte Carlo calculation based on the Lindhard, Scharff and Schiott model of ion collisions in solids. The penetration depth of the Si ions is Rp = 3.38 μm, with a standard deviation ΔRp = 0.35 μm. The samples are annealed in a rapid annealing oven. A maximal activation of dopants is obtained with a temperature of 850 °C for 20 s. The resistivity and average mobility after this anneal are ρ = 3.48 × 10−3 Ω∙cm and μn = 2800 cm2∙V−1∙s−1. This suggests that the majority of ions are activated.

Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

Automated Method for the Analysis of Riboflavin in Milk, with Application to Other Selected Foods

1974 ◽  
Vol 57 (5) ◽  
pp. 1085-1088
Author(s):  
James R Kirk
Keyword(s):  
Standard Deviation ◽  
Continuous Flow ◽  
Quantitative Method ◽  
Green Fluorescence ◽  
Internal Standards ◽  
Automated Method ◽  
Sodium Hydrosulfite ◽  
Automated Technique ◽  
Good Agreement

Abstract A continuous flow automated technique was developed for the determination of riboflavin in milk. The determination is based on the measurement of the natural yellow-green fluorescence of riboflavin at an excitation of 436 nm and emission of 510 nm. Blank values are determined for each sample after sodium hydrosulfite reduction of the riboflavin. Mean recovery and standard deviation for riboflavin in milk determined by the continuous flow procedure using internal standards were 9 7% and ± 2.42%, respectively. The recovery value was in good agreement with that determined using a manual procedure, while the standard deviation was 33% less than that found when using the manual procedure. The results from this study indicate that the continuous flow automated procedure for the determination of riboflavin in milk is a simple, quantitative method which eliminates many of the time-consuming analytical steps.

A photothermal method of simultaneous determination of ultra-shallow junction depth and abruptness

2004 ◽  
Vol 810 ◽  
Author(s):  
Alex Salnick ◽  
Lena Nicolaides ◽  
Jon Opsal ◽  
Amitabh Jain ◽  
Duncan Rogers ◽  
...  
Keyword(s):  
Simultaneous Determination ◽  
Mass Spectroscopy ◽  
Junction Depth ◽  
Semiconductor Wafer ◽  
Photothermal Method ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Secondary Ion ◽  
Better Than

ABSTRACTThermal wave (TW) studies of ultra-shallow junctions (USJ) formed by ion implantation into a semiconductor wafer followed by rapid thermal annealing (RTP) are described. It is shown that using the TW technique allows for a simultaneous determination of the most important USJ parameters – depth and profile abruptness. Experimental results for junction depth and abruptness obtained on a set of B+-implanted, RTP-annealed USJ samples show better than 0.99 correlations to the corresponding secondary ion mass spectroscopy (SIMS) data.

Determination of Ca diffusion in YBCO films by Secondary Ion Mass Spectroscopy

2003 ◽  
Vol 164 (3-4) ◽  
pp. 149-158 ◽  
Author(s):  
A.V. Berenov ◽  
S.R. Foltyn ◽  
C.W. Schneider ◽  
P.A. Warburton ◽  
J.L. MacManus-Driscoll
Keyword(s):  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Ybco Films ◽  
Secondary Ion

Amino Acid Analysis in Feeds and Feedstuifs Using Precolumn Phenylisothiocyanate Derivatization and Liquid Chromatography—Preliminary Study

1987 ◽  
Vol 70 (3) ◽  
pp. 425-428 ◽  
Author(s):  
Rodney W Beaver ◽  
David M Wilson ◽  
Helen M Jones ◽  
Keith D Haydon
Keyword(s):  
Amino Acids ◽  
Liquid Chromatography ◽  
Standard Deviation ◽  
Poultry Feed ◽  
Reverse Phase ◽  
Relative Standard ◽  
Preliminary Study ◽  
Feed Samples ◽  
Good Agreement

Abstract A method for the determination of amino acids in feed hydrolysates is described. The method uses precolumn phenylisothiocyanate (PITC) derealization and liquid chromatography on reverse phase columns with UV detection at 254 nm. The precision of the method on replicate samples of a wheat hydrolysate ranges from 1.9 to 6.7% relative standard deviation for the amino acids examined. (Met and Cys were not determined.) Recoveries were near 100% for most amino acids. Comparisons of the values obtained by PITC method with accepted wines show good agreement in wheat and poultry feed samples.

Determination of Neostigmine Bromide by Ion-Pairing Column Chromatography

1973 ◽  
Vol 56 (1) ◽  
pp. 128-131
Author(s):  
Rita E Kling
Keyword(s):  
Standard Deviation ◽  
Hydrolysis Product ◽  
Ion Pairing ◽  
Commercial Products ◽  
Product Standard ◽  
Ophthalmic Solutions ◽  
Column Chromatographic ◽  
Sensitive Method ◽  
Good Agreement

Abstract A rapid and sensitive method for the assay of neostigmine bromide (NBr) in tablets and ophthalmic solutions has been developed. NBr is isolated from its pharmaceutical excipients by the ion-pairing partition column chromatographic principles of Levine and Doyle followed by ultraviolet determination of its alkaline hydrolysis product. Standard recoveries of NBr from simulated tablet mixtures and ophthalmic solutions averaged 99.8%. The standard deviation of repeated analyses of commercial products was less than±1%. The results of the proposed method for commercial products are in good agreement with the USP XVIII procedure. The procedure is applicable to individual tablet assay.

Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon

1998 ◽  
Vol 510 ◽  
Author(s):  
R. Job ◽  
W. R. Fahrner ◽  
A. I. Ivanov ◽  
L. Palmetshofer ◽  
A. G Ulyashin
Keyword(s):  
High Temperature ◽  
Mass Spectroscopy ◽  
Heat Treatments ◽  
Secondary Ion Mass Spectroscopy ◽  
Spreading Resistance ◽  
Czochralski Silicon ◽  
Implantation Damage ◽  
P Type ◽  
Secondary Ion ◽  
Post Implantation

AbstractP-type Czochralski (Cz) Si was implanted with H (180 keV, 2.7.1016 cm−2) or He (300 keV, 1.1016 cm−2) ions. The gettering of O and H atoms by the buried implantation damage layers during annealing up to 4 hours (1000°C in H2 or N2 ambient) was studied by secondary ion mass spectroscopy (SIMS) and spreading resistance probe (SRP) measurements. Buried defect layers act as good getter centers for O and H atoms at appropriate heat treatments. The enhanced gettering of O atoms in H implanted Cz Si (as compared to the gettering of O in He implanted samples) as well as the enhanced gettering of O during annealing in H2 flow (as compared to N2 ambient) can be explained by a hydrogen enhanced O diffusion towards the defect layers. According to a strong accumulation of O at the buried damage layers and near the surface some anomalies of the SRP profiles can be observed after post-implantation annealing.

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