The preparation and some properties of low resistivity Zn3P2 films prepared using a hot-wall deposition method

1989 ◽  
Vol 67 (9) ◽  
pp. 893-895 ◽  
Author(s):  
A. Haque ◽  
D. E. Brodie
Keyword(s):  
Schottky Barrier ◽  
Deposition Method ◽  
Low Resistivity ◽  
Hole Trapping ◽  
Wall Deposition ◽  
Deposition Parameters

Low resistivity (100 Ω cm) films of polycrystalline Zn3P2 have been prepared by a hot-wall technique. The films are made up of randomly oriented crystals about 5 μm across. Films from 4 to 30 μm thick have been studied and a range of deposition parameters have been investigated. Doping densities of 1016/cm3 were achieved and three-hole trapping levels (near 0.37, 0.42, and 0.77 eV) were detected in Schottky barrier devices fabricated using these films.

Using Statistical Methods to Optimize Patterning Parameters for Tungsten Deposition

2007 ◽  
Author(s):  
Michael DiBattista ◽  
Kimball Skinner ◽  
Rick Kneedler ◽  
Leonid Vasilvey ◽  
Lukas Drybcak ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Statistical Methods ◽  
Deposition Rates ◽  
Low Resistivity ◽  
Material Deposition ◽  
Deposition Parameters ◽  
Beam Parameters

Abstract Circuit edit and failure analysis require tungsten deposition parameters to accomplish different goals. Circuit edit applications desire low resistivity values for rewiring, while failure analysis requires high deposition rates for capping layers. Tungsten deposition can be a well controlled process for a variety of beam parameters. For circuit edit, tungsten resistivity approaching below 150 µohm-cm and 50 μm3/nC is predicted. Material deposition rates of 80 μm3/nC can be achieved with reasonable pattern accuracy using defocus as a parameter.

Electrical properties of PbxSn1-xS thin films prepared by hot wall deposition method

2010 ◽  
Vol 45 (11) ◽  
pp. 1113-1116 ◽  
Author(s):  
D. M. Unuchak ◽  
K. Bente ◽  
V. A. Ivanov ◽  
V. F. Gremenok
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Deposition Method ◽  
Wall Deposition

Formation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping

2011 ◽  
Vol 1305 ◽  
Author(s):  
K. Sawano ◽  
Y. Hoshi ◽  
K. Kasahara ◽  
K. Yamane ◽  
K. Hamaya ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Ohmic Contacts ◽  
Doping Profile ◽  
Nanometer Scale ◽  
Shallow Junction ◽  
Low Resistivity ◽  
Current Voltage ◽  
Delta Doping ◽  
Current Voltage Characteristics

ABSTRACTWe demonstrate low-resistivity Ohmic contacts for n-Ge with ultra-shallow junction. Using the impurity δ-doping techniques with Ge homoepitaxy on Ge(111) below 400 ºC, we can achieve a very abrupt doping profile within a nanometer-scale width. By introducing the δ-doping to atomically controlled metal/Ge contacts, the current-voltage characteristics clearly show Ohmic conductions owing to the effective tunneling through the Schottky barrier. This approach is promising for a formation technology of ultra-shallow source/drain contacts for scaled Ge devices.

Hole‐trapping effects in reverse‐biased Si‐doped Al Schottky‐barrier diodes

1978 ◽  
Vol 49 (6) ◽  
pp. 3574-3577 ◽  
Author(s):  
M. J. Sullivan ◽  
T. M. Reith ◽  
M. Av‐Ron ◽  
M. Shatzkes
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Hole Trapping ◽  
Si Doped ◽  
Trapping Effects

Electrophoretic Deposition of Titania Nanopowders

2009 ◽  
Vol 412 ◽  
pp. 77-82 ◽  
Author(s):  
Mohammad Ghorbani ◽  
Milad Roushanafshar
Keyword(s):  
Electrophoretic Deposition ◽  
Steel Sheet ◽  
Scanning Probe ◽  
Deposition Method ◽  
Stainless Steel Sheet ◽  
Deposition Parameters ◽  
Probe Microscope ◽  
The Stability ◽  
Scanning Electron ◽  
Deposition Conditions

Titania Nanopowders were successfully deposited on stainless steel sheet by means of electrophoretic deposition method from titania suspension in which isopropanol was employed as a solvent and Triethanolamine as a dispersant. The effect of TEA addition on the stability of nanopowders in suspensions was examined by sedimentation test; in addition, Malvern zeta sizer was employed for determination their particle size. Electrophoretic Deposition was done at different deposition conditions of voltage (5-20 volts) and time (5-60 sec) and the scanning electron microscopy (SEM) was used to investigate the effect of suspension composition and deposition parameters on the microstructure of coatings. Furthermore, the effect of deposition parameters on the consistencies of different coatings was analyzed by Scanning Probe Microscope (SPM).

scholarly journals Ионно-лучевое осаждение тонких пленок AlN на Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

2019 ◽  
Vol 45 (24) ◽  
pp. 21
Author(s):  
Л.С. Лунин ◽  
О.В. Девицкий ◽  
И.А. Сысоев ◽  
А.С. Пащенко ◽  
И.В. Касьянов ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ion Beam ◽  
Gas Mixture ◽  
Deposition Method ◽  
Sapphire Substrates ◽  
Ion Beam Deposition ◽  
Deposition Parameters ◽  
Scanning Electron ◽  
Beam Deposition

Thin AlN films were obtained by the ion-beam deposition method on sapphire substrates. Studies were carried out using scanning electron microscopy, Raman scattering and optical spectroscopy. Dependences of influence of the ion-beam deposition parameters (composition of gas mixture, energy of the ion beam) on morphology, structure and optical properties of the AlN films on sapphire were revealed.

scholarly journals Aluminum Patterned Electroplating from AlCl3–[EMIm]Cl Ionic Liquid towards Microsystems Application

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 589 ◽  
Author(s):  
Muhammad Al Farisi ◽  
Silvia Hertel ◽  
Maik Wiemer ◽  
Thomas Otto
Keyword(s):  
Ionic Liquid ◽  
Surface Morphology ◽  
Current Efficiency ◽  
Metallic Materials ◽  
Deposition Method ◽  
Wafer Level ◽  
Microstructure Formation ◽  
Deposition Parameters ◽  
Electroplating Process ◽  
Seed Layers

Electroplating process is being used to deposit a relatively thick film of metallic materials for various microsystems applications, such as for the wafer-level bonding sealing frame and as a thermal actuator. Recently, the Al electroplating process from ionic liquid has been an attractive deposition method for anti-corrosion coatings. To extend the utilization of the film, in particular for microsystems application, a microstructure formation by patterned electroplating of Al from AlCl 3 –1-ethyl-3-methylimidazolium chloride ((EMIm)Cl) ionic liquid is investigated in this study. The influences of each deposition parameters to the electroplating process as well as the resulting surface morphology are evaluated. Electroplated Al deposits on both Au and Al seed layers are both studied. It is also found that a recurrent galvanic pulse plating process yields in a higher current efficiency. Finally, Al electroplating on a 2 µm-trenched 100 mm-wafer is also demonstrated.

Hetero-Epitaxy of Group Va Metals on Sapphire

1972 ◽  
Vol 30 ◽  
pp. 492-493
Author(s):  
J. E. O'Neal ◽  
J. J. Bellina ◽  
B. B. Rath
Keyword(s):  
Thermal Contact ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Ultra High Vacuum ◽  
Backing Plate ◽  
Sapphire Substrates ◽  
Deposition Parameters ◽  
Polishing Damage ◽  
Reflection Electron Diffraction

Thin films of the bcc metals vanadium, niobium and tantalum were epitaxially grown on (0001) and sapphire substrates. Prior to deposition, the mechanical polishing damage on the substrates was removed by an in-situ etch. The metal films were deposited by electron-beam evaporation in ultra-high vacuum. The substrates were heated by thermal contact with an electron-bombarded backing plate. The deposition parameters are summarized in Table 1.The films were replicated and examined by electron microscopy and their crystallographic orientation and texture were determined by reflection electron diffraction. Verneuil-grown and Czochralskigrown sapphire substrates of both orientations were employed for each evaporation. The orientation of the metal deposit was not affected by either increasing the density of sub-grain boundaries by about a factor of ten or decreasing the deposition rate by a factor of two. The results on growth epitaxy are summarized in Tables 2 and 3.

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