Some properties of amorphous hydrogenated silicon nitride prepared by ion-beam-assisted deposition

Thin films of a-SiNx:H were deposited using the ion-beam-assisted deposition technique. Silicon was evaporated from a resistively heated carbon crucible while the substrate was bombarded with low-energy ions (100 eV). The feed gas used for the ion source was primarily ammonia (NH3), but a 90% nitrogen, 10% hydrogen mixture was also tried. The nitrogen–hydrogen mixture resulted in nonhydrogenated films. Both the absence of absorption in the IR spectrum owing to oxygen, and the increase in slope of the Tauc plots are evidence of an improvement in film morphology owing to the ion bombardment. The wide band-gap films photoconduct when exposed to UV light. The photoconducting property is lost when the films are exposed to air, and is restored when the samples are thermally annealed in a vacuum.

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Inorganic-Organic Hybrid Nanocomposites for Photovoltaic Applications

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.571.120 ◽

2012 ◽

Vol 571 ◽

pp. 120-124

Author(s):

Liang Min Zhang

Keyword(s):

Solar Cells ◽

Uv Light ◽

Solar Spectrum ◽

Wide Band ◽

Hybrid Nanocomposites ◽

Wide Band Gap ◽

Inorganic Semiconductors ◽

The Cost ◽

Ruthenium Dye ◽

Photovoltaic Characteristics

Hybrid photovoltaic concepts based on a nanoscale combination of organic and inorganic semiconductors are promising way to enhance the cost efficiency of solar cells through a better use of the solar spectrum, a higher ratio of interface-to-volume, and the flexible processability of polymers. In this work, two types of thin film solar cells have been developed. In both types of solar cells, poly-N-vinylcarbazole (PVK) is used as electron donor, cadmium sulfide (CdS) and titanium dioxide (TiO2) nanocrystals are used as electron acceptors, respectively. Since TiO2 has a wide band gap and can only absorb UV light, in the second type of solar cell, ruthenium dye is used as photo-sensitizer. The preliminary results of photoconductive and photovoltaic characteristics of these two inorganic-organic composites are presented.

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Specific features of photoelectric and optical properties of amorphous hydrogenated silicon films produced by plasmochemical deposition from monosilane–hydrogen mixture

Semiconductors ◽

10.1134/s1063782611040117 ◽

2011 ◽

Vol 45 (4) ◽

pp. 510-514 ◽

Cited By ~ 4

Author(s):

A. G. Kazanskii ◽

E. I. Terukov ◽

P. A. Forsh ◽

M. V. Khenkin

Keyword(s):

Optical Properties ◽

Silicon Films ◽

Hydrogenated Silicon ◽

Hydrogen Mixture ◽

Amorphous Hydrogenated Silicon

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Ion Sources for Ion Beam Assisted Thin Film Deposmon

MRS Proceedings ◽

10.1557/proc-396-635 ◽

1995 ◽

Vol 396 ◽

Cited By ~ 1

Author(s):

Igor V. Svadkovsk ◽

Anatoly P. Dostanko

Keyword(s):

Ion Beam ◽

Ion Source ◽

Ion Sources ◽

Inert Gases ◽

Anode Layer ◽

High Current ◽

Ion Beam Assisted Deposition ◽

Ion Energies ◽

Extended Range ◽

Basic Distinction

AbstractTwo types of the ion sources for ion beam assisted deposition using inert gases, oxygen or nitrogen are reported. Their design and operational features are presented. Each of them has the properties of two existing main types of the gridless Hall sources: an end-Hall source and the anode-layer version a closed-drift ion source. Basic distinction of the developed sources is the extended range of ion energies in high-current beam for optimization of deposition, cleaning and etching processes.

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Electrical and optical properties of amorphous hydrogenated silicon prepared by reactive ion beam sputtering

Journal of Applied Physics ◽

10.1063/1.334080 ◽

1984 ◽

Vol 56 (4) ◽

pp. 1097-1103 ◽

Cited By ~ 7

Author(s):

Jagriti Singh ◽

R. C. Budhani ◽

K. L. Chopra

Keyword(s):

Optical Properties ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Electrical And Optical Properties ◽

Hydrogenated Silicon ◽

Amorphous Hydrogenated Silicon ◽

Beam Sputtering

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Optical properties of thin amorphous silicon and amorphous hydrogenated silicon films produced by ion beam techniques

Thin Solid Films ◽

10.1016/0040-6090(83)90469-8 ◽

1983 ◽

Vol 100 (2) ◽

pp. 141-148 ◽

Cited By ~ 21

Author(s):

P.J. Martin ◽

R.P. Netterfield ◽

W.G. Sainty ◽

D.R. McKenzie

Keyword(s):

Optical Properties ◽

Amorphous Silicon ◽

Ion Beam ◽

Silicon Films ◽

Hydrogenated Silicon ◽

Amorphous Hydrogenated Silicon

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Thermoluminescence Response of AlN+Y2O3 Ceramics to Sunlight and X-Ray Irradiation

Latvian Journal of Physics and Technical Sciences ◽

10.2478/lpts-2021-0001 ◽

2021 ◽

Vol 58 (1) ◽

pp. 3-14

Author(s):

J. Cipa ◽

L. Trinkler ◽

B. Berzina

Keyword(s):

Emission Spectrum ◽

Glow Curve ◽

Uv Light ◽

Emission Spectra ◽

Wide Band ◽

Practical Application ◽

Irradiation Effects ◽

Wide Band Gap ◽

Sunlight Irradiation ◽

X Ray

AbstractAlN is a wide band gap material with promising properties for dosimetric applications, especially in UV dosimetry. In the present research, the thermoluminescence method is used in order to better understand sunlight and X-ray irradiation effects on yttria doped AlN ceramics. In general, the TL response is characterised by a broad TL peak with maxima around 400–450 K and a TL emission spectrum with UV (400 nm), Blue (480 nm) and Red (600 nm) bands. Compared to the X-ray irradiation, sunlight irradiation creates a wider TL glow curve peak with a maximum shifted to higher temperatures by 50 K.Furthermore, in the TL emission spectra of AlN irradiated with sunlight the UV band is suppressed. The reasons of the TL peculiarities under two types of irradiation are discussed. Practical application of AlN ceramics as material for UV light TL dosimetry and, in particular, for sunlight dosimetry is estimated.

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A new and simple ion source for ion beam assisted deposition of thin films

phys stat sol (a) ◽

10.1002/pssa.2211270137 ◽

1991 ◽

Vol 127 (1) ◽

pp. K19-K23 ◽

Cited By ~ 2

Author(s):

R. Hübler ◽

W. H. Schreiner ◽

I. J. R. Baumvol

Keyword(s):

Thin Films ◽

Ion Beam ◽

Ion Source ◽

Ion Beam Assisted Deposition

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A broad beam cold cathode Penning ionization gauge ion source for ion‐beam‐assisted deposition

Review of Scientific Instruments ◽

10.1063/1.1147165 ◽

1996 ◽

Vol 67 (10) ◽

pp. 3494-3496 ◽

Cited By ~ 3

Author(s):

Yusheng Rao ◽

Jiannan Wu ◽

Taoguang Xu

Keyword(s):

Ion Beam ◽

Ion Source ◽

Cold Cathode ◽

Penning Ionization ◽

Ionization Gauge ◽

Broad Beam ◽

Ion Beam Assisted Deposition

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Formation of catalytic and corrosion protective layers with use of ion beam assisted deposition of metals from vacuum arc discharge plasma

Journal of Physics Conference Series ◽

10.1088/1742-6596/2064/1/012054 ◽

2021 ◽

Vol 2064 (1) ◽

pp. 012054

Author(s):

V V Poplavsky ◽

A V Dorozhko ◽

V G Matys

Keyword(s):

Discharge Plasma ◽

Arc Discharge ◽

Ion Beam ◽

Substrate Surface ◽

Ion Source ◽

Vacuum Arc ◽

Corrosion Properties ◽

Ion Beam Assisted Deposition ◽

Deposited Metal ◽

Catalytically Active

Abstract This paper presents a brief overview of our studies on the modification of materials using ion beam assisted deposition (IBAD) of metals from vacuum arc discharge plasma in order to form catalytically active and corrosion-resistant layers on the surface. Deposition of metals on different materials with simultaneous mixing of the deposited layer with the substrate surface by accelerated ions of the deposited metal was carried out in an experimental setup with a pulsed electric arc ion source. Catalytic and corrosion properties of the materials with the obtained layers were studied using electrochemical voltammetric measurements. The microstructure and composition of the resulting layers were studied using the SEM, EDX, WD-XRF, XPS, EBSD, and RBS methods.

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