scholarly journals Secrets revealed — Spatially selective wetting of plasma-patterned periodic mesoporous organosilica

2012 ◽  
Vol 90 (12) ◽  
pp. 1063-1068
Author(s):  
Wendong Wang ◽  
Ian B. Burgess ◽  
Benjamin D. Hatton ◽  
Jack Alvarenga ◽  
Joanna Aizenberg
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Information Security ◽  
Oxygen Plasma ◽  
Periodic Mesoporous Organosilica ◽  
Simple Method ◽  
Wetting Properties ◽  
Mesoporous Organosilica ◽  
Selective Wetting

We report a simple method to pattern wetting properties on thin films of periodic mesoporous organosilica (PMO). A hydrophobic methane PMO thin film was covered by masks and exposed to oxygen plasma to make the unmasked area hydrophilic. The wettability patterns could be revealed only when the films were immersed in water or exposed to moisture. We expect that our method would extend the utility of PMO to such areas as sensing and information security.

Synthesis of visible-light-absorptive and hole-transporting periodic mesoporous organosilica thin films for organic solar cells

2014 ◽  
Vol 2 (30) ◽  
pp. 11857-11865 ◽  
Author(s):  
Masamichi Ikai ◽  
Yoshifumi Maegawa ◽  
Yasutomo Goto ◽  
Takao Tani ◽  
Shinji Inagaki
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Visible Light ◽  
Organic Solar Cells ◽  
Mesoporous Films ◽  
Periodic Mesoporous Organosilica ◽  
Mesoporous Organosilica ◽  
Type Layer ◽  
Hole Transporting ◽  
P Type

Mesoporous films containing 4,7-dithienyl-2,1,3-benzothiadiazole units in the frameworks were synthesized and demonstrated to function as a p-type layer for organic solar cells by filling an n-type PCBM in the mesopores.

Thermochromic VO2 Thin Film Prepared by Post Annealing Treatment of V2O5 Thin Film

2009 ◽  
Vol 79-82 ◽  
pp. 747-750 ◽  
Author(s):  
Dong Qing Liu ◽  
Wen Wei Zheng ◽  
Hai Feng Cheng ◽  
Hai Tao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Simple Method ◽  
X Ray ◽  
Post Annealing ◽  
Vo2 Thin Films

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.

A SIMPLE MODEL FOR OBTAINING OPTICAL CONSTANTS OF POROUS SILICON

2001 ◽  
Vol 15 (17n19) ◽  
pp. 745-748
Author(s):  
JAIME TORRES ◽  
JAIRO GIRALDO
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Simple Model ◽  
Porous Silicon ◽  
Optical Constants ◽  
Normal Incidence ◽  
Sample Thickness ◽  
Infinite Dimensions ◽  
Simple Method ◽  
Harmonic Oscillator Model

A simple method is proposed to calculate optical constants from porous silicon (PS) thin films, out of the simulation of normal incidence reflection spectrums. In the optical system used in this model, PS one considers as a homogeneous uniform thin film when deposited upon a substrate with semi-infinite dimensions. The PS and Substrate refractive indexes are obtained using the Simple Harmonic Oscillator Model, proposed by Wemple and DiDomenico. In addition, the absorption coefficient and sample thickness are also be obtained. The model to calculate the optical constants of some samples prepared at different anodisation times is used.

Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing

2015 ◽  
Vol 815 ◽  
pp. 8-13
Author(s):  
Chun Min Zhang ◽  
Xiao Yong Liu ◽  
Lin Qing Zhang ◽  
Hong Liang Lu ◽  
Peng Fei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Processing ◽  
Oxygen Plasma ◽  
Film Formation ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Line Process ◽  
Formation Method ◽  
Thin Film Formation

A novel Ru thin film formation method was proposed to deposit metallic Ru thin films on TiN substrate for future backend of line process in semiconductor technologies. RuO2 thin films were first grown on TiN substrate by oxygen plasma-enhanced atomic layer deposition technique. The deposited RuO2 thin films were then reduced into metallic Ru thin films by H2/N2-assisted annealing.

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