THE EFFECT OF THE AMBIENT OXYGEN ON THE ELECTRICAL PROPERTIES OF AN EVAPORATED FILM OF PENTACENE

1961 ◽  
Vol 39 (10) ◽  
pp. 1981-1988 ◽  
Author(s):  
Haruo Kuroda ◽  
E. A. Flood

The "oxygen effect" on the dark current as well as that on the photocurrent was investigated using thin evaporated films of pentacene, 1,2-benzpentacene, 1,2,8,9-dibenzpentacene, 6,13-diphenylpentacene, and 5,7,12,14-tetraphenylpentacene. No oxygen effect could be detected in the dark current.From the photocurrent dependence on oxygen pressure and from the rate of photocurrent decay, it is concluded that additional charge carriers are produced on illumination by photoexcitation of a surface complex.

1997 ◽  
Vol 500 ◽  
Author(s):  
M. Park ◽  
G. M. Choi

ABSTRACTComposition. dependence of electrical conductivity of ionic-electronic composite was camined using yttria(8mol%) stabilized zirconia-NiO composites. The contributions of ectronic and ionic charge carriers to the electrical conductivity were determined by Hebb-Vagner polarization technique and electromotive force measurement of galvanic cell. Up to 6 sol% NiO addition, the conductivity decreased since the electronic NiO acted as an insulator in onic matrix. However the ionic transport was dominant until NiO content reaches 26 vol%. Mixed conduction was observed between 26 and 68 vol% of NiO. The effects of composition on he electrical properties were explained by the microstructure and thus by the distribution of two hases.


2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Tuhina Tiwari ◽  
Neelam Srivastava ◽  
P. C. Srivastava

The effect of different anions, namely,SCN−,I−, andClO4−, on the electrical properties of starch-based polymer electrolytes has been studied. Anion size and conductivity are having an inverse trend indicating systems to be predominantly anionic conductor. Impact of anion size and multiplet forming tendency is reflected in number of charge carriers and mobility, respectively. Ion dynamics study reveals the presence of different mechanisms in different frequency ranges. Interestingly, superlinear power law (SLPL) is found to be present at <5 MHz frequency, which is further confirmed by dielectric data.


1994 ◽  
Vol 22 (1-12) ◽  
pp. 106-110 ◽  
Author(s):  
Tetsuo Sakamoto ◽  
Bunbunoshin Tomiyasu ◽  
Masanori Owari ◽  
Yoshimasa Nihei
Keyword(s):  

2019 ◽  
Vol 45 (10) ◽  
pp. 13518-13522 ◽  
Author(s):  
Shan Jiao ◽  
Yi Zhang ◽  
Zhihua Duan ◽  
Tao Wang ◽  
Yanxue Tang ◽  
...  

2020 ◽  
Vol 34 (27) ◽  
pp. 2050246
Author(s):  
A. A. Garibli ◽  
A. A. Garibov

The nuclear transmutation in the nanosilicon under the influence of epithermal neutrons and the formation processes of charge carriers under the influence of gamma and beta rays emitted by unstable nuclei were theoretically and experimentally investigated. These studies may provide information on the origin and number of electroactive defects in neutron-irradiated nanosilicon.


2008 ◽  
Vol 368-372 ◽  
pp. 653-655
Author(s):  
Xin Wang ◽  
Yu Dong Lu ◽  
Zhi Qiang Zhuang

Sb-doped BaPbO3 ceramics were prepared by sol-gel method. The influence of Pb/Ba ratio and Sb concentration on the electrical properties of BaPb1+x-ySbyO3 (x=0.0, 0.1, 0.2 and 0≤y≤0.2) compositions were investigated. Holes and Pb vacancies were the major defects in lightly donor-doped BaPbO3, where the increase of donor concentration resulted in decrease of charge carriers (holes), leading to resistivity increasing. In the highly donor-doped conditions, the microstructure or solid solubility substituted defect structure as the main factor affecting the variety of resistivity. The lowest electrical resistivity of Sb-doped BaPbO3 was 2.69 × 10-4 /·cm when the Sb concentration y=0.12~0.13. Excess of Pb causes the born of barium vacancies. And, the observed PTCR behavior of BaPb1.2O3 involves the Barium vacancies in grain boundaries. 0.5 mol% Sb-doped BaPbO3 showed the best PTCR behavior and its Curie temperature was about 850°C.


1998 ◽  
Vol 541 ◽  
Author(s):  
K. M. Lee ◽  
D. Thomas ◽  
S. H. Kim ◽  
J. P. Maria ◽  
A. I. Kingon ◽  
...  

AbstractThe polarization suppression and electrical properties directly associated with the electrical polarization fatigue in SrBi2Ta2O9system were systematically investigated using Pt/SBT/Pt capacitors. Three general observations were made after 109 switching cycles: (i) ∼95% of the remanent polarization was conserved, (ii) both high and zero bias field capacitance decreased, and (iii) leakage current density increased from approximately 10−7 to 10−5 A/cm2at ∼30kV/cm2. In addition, the “knee” field, at which the leakage abruptly increases, assumed smaller values with cumulative switching cycles. Temperature dependent leakage data was collected for both as-deposited and field-cycled samples. Based on these results, we propose the possibilities of enhanced concentration of charge carriers or additional reductions in interfacial conduction barriers. Motion of oxygen vacancies to less-shallow energy levels near electrode/ferroelectric interface may allow this mechanism to occur.


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