Formation processes of additional charge carriers in nanosilicon under the influence of epithermal neutrons

2020 ◽  
Vol 34 (27) ◽  
pp. 2050246
Author(s):  
A. A. Garibli ◽  
A. A. Garibov
Keyword(s):  
Charge Carriers ◽  
Formation Processes ◽  
Nuclear Transmutation ◽  
Unstable Nuclei ◽  
Epithermal Neutrons ◽  
Additional Charge

The nuclear transmutation in the nanosilicon under the influence of epithermal neutrons and the formation processes of charge carriers under the influence of gamma and beta rays emitted by unstable nuclei were theoretically and experimentally investigated. These studies may provide information on the origin and number of electroactive defects in neutron-irradiated nanosilicon.

Hall Effect Measurements On SixGe1−x Bulk Alloys

1996 ◽  
Vol 442 ◽  
Author(s):  
T. Mchedlidze ◽  
I. Yonenaga
Keyword(s):  
Hall Effect ◽  
Carrier Transport ◽  
Czochralski Method ◽  
Charge Carriers ◽  
Transport Measurement ◽  
Type Conductivity ◽  
Measurement Results ◽  
Hall Effect Measurements ◽  
Bulk Alloys ◽  
Additional Charge

AbstractCarrier transport measurement results for SixGe1−x bulk alloys with 0.03≤x≤0.9, grown by the Czochralski method are presented. Both monocrystalline (x=0.03 and x=0.23) and polycrystalline (x=0.12, 0.25, 0.4, 0.5, 0.75, 0.9) samples were analyzed. In all samples additional charge carriers were created during growth or/and cooling of crystals. With n-type starting materials only alloy with x=0.9 revealed n-type conductivity, all other alloys were of ptype. Creation of acceptors in the SixGe1−x alloy grown by Czochralski method is maximal for 0.4≤x≤0.75.

THE EFFECT OF THE AMBIENT OXYGEN ON THE ELECTRICAL PROPERTIES OF AN EVAPORATED FILM OF PENTACENE

1961 ◽  
Vol 39 (10) ◽  
pp. 1981-1988 ◽  
Author(s):  
Haruo Kuroda ◽  
E. A. Flood
Keyword(s):  
Electrical Properties ◽  
Oxygen Pressure ◽  
Dark Current ◽  
Charge Carriers ◽  
Oxygen Effect ◽  
Surface Complex ◽  
Ambient Oxygen ◽  
Additional Charge ◽  
Photocurrent Decay

The "oxygen effect" on the dark current as well as that on the photocurrent was investigated using thin evaporated films of pentacene, 1,2-benzpentacene, 1,2,8,9-dibenzpentacene, 6,13-diphenylpentacene, and 5,7,12,14-tetraphenylpentacene. No oxygen effect could be detected in the dark current.From the photocurrent dependence on oxygen pressure and from the rate of photocurrent decay, it is concluded that additional charge carriers are produced on illumination by photoexcitation of a surface complex.

scholarly journals Исследование механизмов изменения степени униполярности при термической обработке сильно легированных кристаллов LiNbO-=SUB=-3-=/SUB=-:ZnO

2020 ◽  
Vol 90 (8) ◽  
pp. 1296
Author(s):  
М.Н. Палатников ◽  
В.А. Сандлер ◽  
Н.В. Сидоров ◽  
О.В. Макарова
Keyword(s):  
Thermal Decomposition ◽  
Thermal Treatment ◽  
Thermal Behavior ◽  
Domain Structure ◽  
Domain Walls ◽  
Short Circuit ◽  
Charge Carriers ◽  
Order Of Magnitude ◽  
Polar Clusters ◽  
Additional Charge

Phenomenological mechanisms of an increase in unipolarity degree at thermal treatment under short circuit conditions of strongly doped crystals are researched by comparison with thermal behavior of nominally pure LiNbO3 crystals of congruent composition. It has been shown that an increase in unipolarity degree, and correspondingly vanishing of domain structure in strongly doped LiNbO3:ZnО crystals starts by thermal decomposition of charged polar clusters. These clusters stabilize domain walls. The decomposition is accompanied by sharp jump-like injection of additional charge carriers (Li+ cations). Due to this, conductivity of LiNbO3:ZnО crystals is one order of magnitude higher at temperature above 800K than in nominally pure LiNbO3 crystals of congruent composition. The injection leads to decomposition of domain structure in LiNbO3:ZnО crystals in spite of LiNbO3 crystals of congruent composition.

Defect formation processes in the silicon nanoparticles under the neutron irradiation

2019 ◽  
Vol 33 (26) ◽  
pp. 1950315 ◽  
Author(s):  
A. A. Garibli ◽  
A. A. Garibov ◽  
E. M. Huseynov
Keyword(s):  
Cross Section ◽  
Neutron Irradiation ◽  
Silicon Nanoparticles ◽  
Defect Formation ◽  
Formation Processes ◽  
Free Electrons ◽  
Paramagnetic Resonance ◽  
Epithermal Neutrons ◽  
Before And After ◽  
Electron Paramagnetic

Silicon nanoparticles have been irradiated by neutrons up to 20 h. Free electrons and defects in the nanosilicon particles have been comparatively investigated before and after neutron irradiation using electron paramagnetic resonance (EPR) method. The neutron scattering and capture cross-section processes have been calculated for natural [Formula: see text], [Formula: see text], [Formula: see text] isotopes, which are main part of nanosilicon samples when irradiated for 20 h by epithermal neutrons. Particle size, agglomeration and other surface effects of silicon nanoparticles were studied with scanning electron microscope (SEM) before and after neutron irradiation.

Detector strategies for environmental scanning electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1296-1297
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Vacuum ◽  
Environmental Scanning Electron Microscopy ◽  
Charge Carriers ◽  
Environmental Scanning ◽  
Surface Information ◽  
X Ray ◽  
Detector Electrode ◽  
Electrons And Ions ◽  
Low Energy Electrons ◽  
Environmental Sem

Environmental SEM operate at specimen chamber pressures of ∼20 torr (2.7 kPa) allowing stabilization of liquid water at room temperature, working on rugged insulators, and generation of an environmental secondary electron (ESE) signal. All signals available in conventional high vacuum instruments are also utilized in the environmental SEM, including BSE, SE, absorbed current, CL, and X-ray. In addition, the ESEM allows utilization of the flux of charge carriers as information, providing exciting new signal modes not available to BSE imaging or to conventional high vacuum SEM.In the ESEM, at low vacuum, SE electrons are collected with a “gaseous detector”. This detector collects low energy electrons (and ions) with biased wires or plates similar to those used in early high vacuum SEM for SE detection. The detector electrode can be integrated into the first PLA or positioned at any other place resulting in a versatile system that provides a variety of surface information.

Direct imaging of charge transfer

1996 ◽  
Vol 54 ◽  
pp. 680-681
Author(s):  
Yimei Zhu ◽  
J. Tafto
Keyword(s):  
Charge Transfer ◽  
Electron Diffraction ◽  
Scattering Amplitude ◽  
High Temperature Superconductors ◽  
Charge Carriers ◽  
Image Charge ◽  
Net Charge ◽  
Long Time ◽  
Electron Holes ◽  
First Time

The electron holes confined to the CuO2-plane are the charge carriers in high-temperature superconductors, and thus, the distribution of charge plays a key role in determining their superconducting properties. While it has been known for a long time that in principle, electron diffraction at low angles is very sensitive to charge transfer, we, for the first time, show that under a proper TEM imaging condition, it is possible to directly image charge in crystals with a large unit cell. We apply this new way of studying charge distribution to the technologically important Bi2Sr2Ca1Cu2O8+δ superconductors.Charged particles interact with the electrostatic potential, and thus, for small scattering angles, the incident particle sees a nuclei that is screened by the electron cloud. Hence, the scattering amplitude mainly is determined by the net charge of the ion. Comparing with the high Z neutral Bi atom, we note that the scattering amplitude of the hole or an electron is larger at small scattering angles. This is in stark contrast to the displacements which contribute negligibly to the electron diffraction pattern at small angles because of the short g-vectors.

I Like Her, Because I Like Myself: Self-Evaluation as a Source of Interpersonal Attitudes

2003 ◽  
Vol 50 (4) ◽  
pp. 239-246 ◽  
Author(s):  
Eva Walther ◽  
Claudia Trasselli
Keyword(s):  
Opposite Effect ◽  
Learning Phase ◽  
The Self ◽  
Attitude Formation ◽  
Formation Processes ◽  
False Feedback ◽  
Self Evaluation ◽  
Evaluation Group ◽  
Group A ◽  
The Difference

Abstract. Two experiments tested the hypothesis that self-evaluation can serve as a source of interpersonal attitudes. In the first study, self-evaluation was manipulated by means of false feedback. A subsequent learning phase demonstrated that the co-occurrence of the self with another individual influenced the evaluation of this previously neutral target. Whereas evaluative self-target similarity increased under conditions of negative self-evaluation, an opposite effect emerged in the positive self-evaluation group. A second study replicated these findings and showed that the difference between positive and negative self-evaluation conditions disappeared when a load manipulation was applied. The implications of self-evaluation for attitude formation processes are discussed.

Optical pumping and unstable nuclei

1985 ◽  
Vol 10 (6) ◽  
pp. 659-674 ◽  
Author(s):  
E.W. Otten
Keyword(s):  
Optical Pumping ◽  
Unstable Nuclei
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