A LOW VOLTAGE BIAS TECHNIQUE TO INCREASE SENSITIVITY OF MOSFETS DOSIMETERS

2001 ◽  
Author(s):  
G. FIKOS ◽  
S. SISKOS ◽  
A. CHATZIGIANNAKI ◽  
G. SARRABAYROUSE
Keyword(s):  
Low Voltage ◽  
Voltage Bias

Conducting Properties of a Contact Between Open-End Carbon Nanotube and Various Electrodes

2009 ◽  
Author(s):  
Feng Gao ◽  
Jianmin Qu ◽  
Matthew Yao
Keyword(s):  
Electronic Structure ◽  
Carbon Nanotube ◽  
Density Functional ◽  
Low Voltage ◽  
Local Density ◽  
Electrical Contact ◽  
Metal Electrode ◽  
Electrode System ◽  
Voltage Bias ◽  
Electronic Conductance

The carbon nanotube (CNT) is becoming a promising candidate as electrical interconnects in nanoscale electronics. This paper reports the electronic structure and the electrical conducting properties at the interface between an open-end single wall CNT (SWCNT) and various metal electrodes, such as Al, Au, Cu, and Pd. A simulation cell consisting of an SWCNT with each end connected to the metal electrode was constructed. A voltage bias is prescribed between the left- and right-electrodes to compute the electronic conductance. Due to the electronic structure, the electron density and local density of states (LDOS) are calculated to reveal the interaction behavior at the interfaces. The first-principle quantum mechanical density functional and non-equilibrium Green’s function (NEGF) approaches are adopted to compute the transport coefficient. After that, the voltage-current relation is calculated using the Landauer-Buttiker formalism. The results show that electrons are conducted through the electrode/CNT/electrode two-probe system. The contact electronic resistance is calculated by averaging the values in the low voltage bias regime (0.0–0.1 V), in which the voltage–current relationship is found to be linear. And the electrical contact conductance of electrode/CNT/electrode system show the electrode-type dependent, however, the amplitude for different electrodes is of the same order.

IMPROVED TWO-TERMINAL SILICON FUNCTIONAL OPTICAL SENSOR

2001 ◽  
Vol 15 (17n19) ◽  
pp. 722-725 ◽  
Author(s):  
A. MALIK ◽  
M. ACEVES
Keyword(s):  
Optical Sensor ◽  
Low Voltage ◽  
Electronic Components ◽  
Digital Output ◽  
Optical Signals ◽  
Voltage Bias ◽  
Wide Range ◽  
Optoelectronic Applications ◽  
Silicon Based

The modelling of two-terminal silicon-based multi-layered functional photosensor that operates at low-voltage bias is presented. The devices developed do not require external active electronic components (transistors, microminiature circuits, etc) to execute their functions. Neither to transform analogue input optical signals to digital output form that is very important for a wide range of optoelectronic applications.

An effective strategy to promote hematite photoanode at low voltage bias via Zr4+/Al3+ codoping and CoOx OER co-catalyst

2019 ◽  
Vol 319 ◽  
pp. 444-455 ◽  
Author(s):  
Arunprabaharan Subramanian ◽  
Mahadeo A. Mahadik ◽  
Jin-Woo Park ◽  
In Kwon Jeong ◽  
Hee-Suk Chung ◽  
...  
Keyword(s):  
Low Voltage ◽  
Effective Strategy ◽  
Co Catalyst ◽  
Voltage Bias

Processing of human melanoma cells for correlative TEM, LVSEM, and LM

1991 ◽  
Vol 49 ◽  
pp. 106-107
Author(s):  
Marek Malecki ◽  
J. Victor Small ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Low Voltage ◽  
Fluorescent Microscopy ◽  
Blood Stream ◽  
Surface Topology ◽  
Integrin Receptors ◽  
Transmission Electron ◽  
Develop Technology ◽  
Voltage Scanning ◽  
Mechanisms Of Adhesion

The relative roles of adhesion and locomotion in malignancy have yet to be clearly established. In a tumor, subpopulations of cells may be recognized according to their capacity to invade neighbouring tissue,or to enter the blood stream and metastasize. The mechanisms of adhesion and locomotion are themselves tightly linked to the cytoskeletal apparatus and cell surface topology, including expression of integrin receptors. In our studies on melanomas with Fluorescent Microscopy (FM) and Cell Sorter(FACS), we noticed that cells in cultures derived from metastases had more numerous actin bundles, then cells from primary foci. Following this track, we attempted to develop technology allowing to compare ultrastructure of these cells using correlative Transmission Electron Microscopy(TEM) and Low Voltage Scanning Electron Microscopy(LVSEM).

High-pressure freezing of cells in suspension for low-voltage scanning electron microscopy (LVSEM)

1991 ◽  
Vol 49 ◽  
pp. 64-65
Author(s):  
Marek Malecki ◽  
James Pawley ◽  
Hans Ris
Keyword(s):  
Electron Microscopy ◽  
High Pressure ◽  
Low Voltage ◽  
Culture Media ◽  
Cell Structure ◽  
Freeze Substitution ◽  
Ice Crystal ◽  
High Pressure Freezing ◽  
Cell Culture Media ◽  
Voltage Scanning

The ultrastructure of cells suspended in physiological fluids or cell culture media can only be studied if the living processes are stopped while the cells remain in suspension. Attachment of living cells to carrier surfaces to facilitate further processing for electron microscopy produces a rapid reorganization of cell structure eradicating most traces of the structures present when the cells were in suspension. The structure of cells in suspension can be immobilized by either chemical fixation or, much faster, by rapid freezing (cryo-immobilization). The fixation speed is particularly important in studies of cell surface reorganization over time. High pressure freezing provides conditions where specimens up to 500μm thick can be frozen in milliseconds without ice crystal damage. This volume is sufficient for cells to remain in suspension until frozen. However, special procedures are needed to assure that the unattached cells are not lost during subsequent processing for LVSEM or HVEM using freeze-substitution or freeze drying. We recently developed such a procedure.

Development of a conical anode Fe-gun for low voltage SEM

1988 ◽  
Vol 46 ◽  
pp. 978-979
Author(s):  
T. Miyokawa ◽  
S. Norioka ◽  
S. Goto
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Low Voltage ◽  
Irradiation Damage ◽  
Cold Cathode ◽  
Virtual Source ◽  
Source Position ◽  
Electrostatic Lens ◽  
Electrostatic Lenses ◽  
Wide Range

Field emission SEMs (FE-SEMs) are becoming popular due to their high resolution needs. In the field of semiconductor product, it is demanded to use the low accelerating voltage FE-SEM to avoid the electron irradiation damage and the electron charging up on samples. However the accelerating voltage of usual SEM with FE-gun is limited until 1 kV, which is not enough small for the present demands, because the virtual source goes far from the tip in lower accelerating voltages. This virtual source position depends on the shape of the electrostatic lens. So, we investigated several types of electrostatic lenses to be applicable to the lower accelerating voltage. In the result, it is found a field emission gun with a conical anode is effectively applied for a wide range of low accelerating voltages.A field emission gun usually consists of a field emission tip (cold cathode) and the Butler type electrostatic lens.

SEM analysis of DC magnetron sputtered beryllium films

1988 ◽  
Vol 46 ◽  
pp. 960-961
Author(s):  
E. F. Lindsey ◽  
C. W. Price ◽  
E. L. Pierce ◽  
E. J. Hsieh
Keyword(s):  
Fine Structure ◽  
Electron Emission ◽  
Secondary Electron ◽  
Low Voltage ◽  
Ion Beam ◽  
Secondary Electron Emission ◽  
Sem Analysis ◽  
Fused Silica ◽  
Grain Structure ◽  
Silica Substrate

Columnar structures produced by DC magnetron sputtering can be altered by using RF biased sputtering or by exposing the film to nitrogen pulses during sputtering, and these techniques are being evaluated to refine the grain structure in sputtered beryllium films deposited on fused silica substrates. Beryllium is brittle, and fractures in sputtered beryllium films tend to be intergranular; therefore, a convenient technique to analyze grain structure in these films is to fracture the coated specimens and examine them in an SEM. However, fine structure in sputtered deposits is difficult to image in an SEM, and both the low density and the low secondary electron emission coefficient of beryllium seriously compound this problem. Secondary electron emission can be improved by coating beryllium with Au or Au-Pd, and coating also was required to overcome severe charging of the fused silica substrate even at low voltage. The coating structure can obliterate much of the fine structure in beryllium films, but reasonable results were obtained by using the high-resolution capability of an Hitachi S-800 SEM and either ion-beam coating with Au-Pd or carbon coating by thermal evaporation.

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