scholarly journals SPECTRA OF RADIATION AND CREATED PARTICLES AT INTERMEDIATE ENERGY IN ORIENTED CRYSTAL TAKING INTO ACCOUNT ENERGY LOSS

2010 ◽  
Vol 25 (supp01) ◽  
pp. 34-46
Author(s):  
V. N. BAIER ◽  
V. M. KATKOV
Keyword(s):  
Energy Loss ◽  
Single Crystal ◽  
Multiple Scattering ◽  
Spectral Distribution ◽  
Charged Particles ◽  
Intermediate Energy ◽  
Photon Absorption ◽  
Oriented Crystal ◽  
Intermediate Energies ◽  
Oriented Single Crystal

The spectral distribution of positron created by photon and the spectral distribution of photons radiated from electron in an oriented single crystal of intermediate thickness is calculated at intermediate energies. The energy loss of charged particles as well as photon absorption are taken into account. The used basic probabilities of processes include the action of field of axis as well as the multiple scattering of radiating electron or particles of the created pair (the Landau-Pomeranchuk-Migdal (LPM) effect).

Energy loss distribution for swift positively charged particles in an oriented single crystal

1989 ◽  
Vol 324 (2) ◽  
pp. 277-295 ◽  
Author(s):  
N.A. Kudryashov ◽  
V.A. Arutyunov ◽  
M.N. Strikhanov ◽  
S.A. Vorobyov
Keyword(s):  
Energy Loss ◽  
Single Crystal ◽  
Charged Particles ◽  
Loss Distribution ◽  
Positively Charged ◽  
Oriented Single Crystal

scholarly journals Multiple Scattering Calculation for Ionisation of Helium Atoms by Electrons at Intermediate Energies

1994 ◽  
Vol 47 (1) ◽  
pp. 49 ◽  
Author(s):  
S Seal ◽  
JN Das
Keyword(s):  
Electron Impact ◽  
Multiple Scattering ◽  
Intermediate Energy ◽  
Present Calculation ◽  
Triple Differential Cross Section ◽  
Helium Atoms ◽  
Intermediate Energies ◽  
Impact Ionisation ◽  
The Impact ◽  
Better Than

The triple differential cross section for electron impact ionisation of helium atoms has been calculated in the coplanar asymmetric geometry following the multiple scattering approach of Das. The method has already been successfully employed to describe the electron impact ionisation problem for the hydrogen atom. Here the impact energy of the incident electron is taken to be 150 and 250 eV in an intermediate energy range where there are still some discrepancies between theory and experiment. Present results are compared with the available experimental data and with two of the most recent calculations in some cases, and are found to be in reasonable accord with experiment, particularly in the binary peak region. The present calculation for 250 e V incident energy reproduces the experimental results in some cases better than other theories.

A simple device for transferring an oriented crystal from an X-ray Laue diffractometer to a cutting machine

2017 ◽  
Vol 50 (5) ◽  
pp. 1554-1555 ◽  
Author(s):  
S. M. Stishov
Keyword(s):  
Single Crystal ◽  
Simple Device ◽  
Oriented Crystal ◽  
X Ray ◽  
Cutting Machine ◽  
Transfer Device ◽  
Oriented Single Crystal

A simple transfer device is described that enables cutting of an oriented single crystal.

Studies of Oxide Formation on Copper Thin Films by Electron Microscopy

1977 ◽  
Vol 35 ◽  
pp. 316-317
Author(s):  
G. G. Hembree ◽  
M. A. Otooni ◽  
J. M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Single Crystal ◽  
Crystal Surface ◽  
Crystal Defects ◽  
Diffraction Reflection ◽  
Reaction Products ◽  
Intermediate Energies ◽  
Crystal Films ◽  
Reflection Electron Microscopy

The formation of oxide structures on single crystal films of metals has been investigated using the REMEDIE system (for Reflection Electron Microscopy and Electron Diffraction at Intermediate Energies) (1). Using this instrument scanning images can be obtained with a 5 to 15keV incident electron beam by collecting either secondary or diffracted electrons from the crystal surface (2). It is particularly suited to studies of the present sort where the surface reactions are strongly related to surface morphology and crystal defects and the growth of reaction products is inhomogeneous and not adequately described in terms of a single parameter. Observation of the samples has also been made by reflection electron diffraction, reflection electron microscopy and replication techniques in a JEM-100B electron microscope.A thin single crystal film of copper, epitaxially grown on NaCl of (100) orientation, was repositioned on a large copper single crystal of (111) orientation.

Background Fitting in the Low-Loss Region of Electron Energy Loss Spectra

1990 ◽  
Vol 48 (2) ◽  
pp. 56-57
Author(s):  
C P Scott ◽  
A J Craven ◽  
C J Gilmore ◽  
A W Bowen
Keyword(s):  
Energy Loss ◽  
Multiple Scattering ◽  
Simple Form ◽  
Single Scattering ◽  
Low Loss ◽  
Characteristic Energy ◽  
Normal Method ◽  
Fitting In ◽  
Electron Energy Loss ◽  
Electron Energy Loss Spectra

The normal method of background subtraction in quantitative EELS analysis involves fitting an expression of the form I=AE-r to an energy window preceding the edge of interest; E is energy loss, A and r are fitting parameters. The calculated fit is then extrapolated under the edge, allowing the required signal to be extracted. In the case where the characteristic energy loss is small (E < 100eV), the background does not approximate to this simple form. One cause of this is multiple scattering. Even if the effects of multiple scattering are removed by deconvolution, it is not clear that the background from the recovered single scattering distribution follows this simple form, and, in any case, deconvolution can introduce artefacts.The above difficulties are particularly severe in the case of Al-Li alloys, where the Li K edge at ~52eV overlaps the Al L2,3 edge at ~72eV, and sharp plasmon peaks occur at intervals of ~15eV in the low loss region. An alternative background fitting technique, based on the work of Zanchi et al, has been tested on spectra taken from pure Al films, with a view to extending the analysis to Al-Li alloys.

scholarly journals Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Loss ◽  
Single Crystal ◽  
Oxygen Stoichiometry ◽  
High Resistivity ◽  
Edge Structure ◽  
Glass Substrates ◽  
Lower Resistivity

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.

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