PREPARATION OF 1-3 CONNECTIVITY COMPOSITE FILMS OF WELL-ALIGNED ZnO WHISKER ARRAYS WITH AN ORGANIC RESIN

2006 ◽  
Vol 20 (25n27) ◽  
pp. 3658-3662
Author(s):  
YUE ZHANG ◽  
XUE-CHUAN ZHANG ◽  
SHU-BING WANG
Keyword(s):  
Composite Film ◽  
Composite Films ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Piezoelectric Composite ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Method ◽  
Crystal Silicon ◽  
Actuator Arrays ◽  
Oxide Whisker

Zinc oxide whisker arrays well-aligned along [0001] direction have been grown on the substrates of glass and single crystal silicon by atmospheric metal organic chemical vapor deposition method (MOCVD). The SEM observation indicated that the whiskers were quite uniform in length and diameter. The whisker arrays were very dense, and the gap among the whiskers was less than 1 μm. The array materials were proposed as the component to prepare 1-3 piezoelectric composite film in-situ. Epoxy resin was used as the matrix materials. The key points to prepare the composites are how to make the resin enter the array and control a suitable thickness of the resin films. Several approaches were studied. The results showed that the best was the vertical sucking method. The SEM observations indicated that the thickness was well controlled as almost same as the length of the whiskers, and the resin perfectly entered the array without pore. The 1-3 piezoelectric composite film has great potential applications in micro sensor and actuator arrays.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

Selective and low temperature synthesis of polycrystalline diamond

1991 ◽  
Vol 6 (6) ◽  
pp. 1278-1286 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel ◽  
C. Ellis ◽  
D.A. Jaworske ◽  
W. Baugh
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Microwave Plasma ◽  
Diamond Particle ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Crystal Silicon ◽  
Diamond Thin Films

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 °C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

scholarly journals Horizontal Assembly of Single Nanowire Diode Fabricated byp-nJunction GaN NW Grown by MOCVD

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Ji-Hyeon Park ◽  
Suthan Kissinger ◽  
Yong Ho Ra ◽  
Kang San ◽  
Min Ji Park ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Uv Light ◽  
Light Exposure ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Method ◽  
Transport Studies ◽  
Transmission Electron ◽  
Metal Organic ◽  
Parallel Assembly

Uniaxiallyp-njunction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111) substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a <0001> growth axis. The parallel assembly of thep-njunction nanowire was prepared on a Si substrate with a thermally grown SiO2layer. The transport studies of horizontal gallium nitride nanowire structures assembled fromp- andn-type materials show that these junctions correspond to well-definedp-njunction diodes. Thep-njunction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

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