scholarly journals Luminescence and Structure of ZnO Grown by Physical Vapor Deposition

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
R. García-Gutiérrez ◽  
M. Barboza-Flores ◽  
D. Berman-Mendoza ◽  
R. Rangel-Segura ◽  
O. E. Contreras-López
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Luminescent Properties ◽  
Growth Direction ◽  
X Ray Diffraction ◽  
Band Emission ◽  
Ultra High Purity ◽  
Vapor Deposition Technique ◽  
Physical Vapor Deposition Technique ◽  
Xrd Patterns

Nanostructured ZnO was deposited on different substrates (Si, SiO2, and Au/SiO2) by an enhanced physical vapor deposition technique that presents excellent luminescent properties. This technique consists in a horizontal quartz tube reactor that uses ultra-high purity Zn and UHP oxygen as precursors. The morphology and structure of ZnO grown in this work were studied by electron microscopy and X-ray diffraction. The XRD patterns revealed the highly crystalline phase of wurtzite polycrystalline structure, with a preferred (1011) growth direction. Room temperature cathodoluminescence studies revealed two features in the luminescence properties of the ZnO obtained by this technique, first a high-intensity narrow peak centered at 390 nm (~3.2 eV) corresponding to a near band-to-band emission, and secondly, a broad peak centered around 517 nm (2.4 eV), the typical green-yellow luminescence, related to an unintentionally doped ZnO.

DEPOSITION OF THIN FILM COPPER NANOSTRUCTURES BY ELECTRON BEAM PHYSICAL VAPOR DEPOSITION TECHNIQUE ON SiO2/p-TYPE Si(100) AND STUDY OF ITS OXIDATION BEHAVIOR

2011 ◽  
Vol 25 (19) ◽  
pp. 2567-2574 ◽  
Author(s):  
M. YEGANEH ◽  
M. SAREMI
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Integrated Circuits ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Oxidation Behavior ◽  
X Ray Diffraction ◽  
Vapor Deposition Technique ◽  
Physical Vapor Deposition Technique ◽  
P Type

Electron beam physical vapor deposition (EBPVD) is being used in coating components for many applications such as for producing nanostructures and integrated circuits (ICs) coating in electronic industry. In this work, copper was deposited on the SiO 2/p-type Si (100). Thin film characteristics are investigated by scanning electron microscopy and X-ray diffraction (XRD). Then oxidation behavior of deposits was evaluated by Dektak Surface Profiler and weight gain method at 200 and 300°C. Results showed that thin film copper deposited by EBPVD has better oxidation characteristics in comparison with copper foil.

Microstructure of Fe-Based ODS High-Temperature Alloy Sheet Prepared by EBPVD

2007 ◽  
Vol 353-358 ◽  
pp. 1637-1640 ◽  
Author(s):  
Xiu Lin ◽  
Yue Sun ◽  
Guang Pin Song ◽  
Xiao Dong He
Keyword(s):  
High Temperature ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Orientation Angle ◽  
Alloy Sheet ◽  
Columnar Microstructure ◽  
High Temperature Alloy ◽  
Vapor Deposition Technique ◽  
Physical Vapor Deposition Technique

Large-sized Fe-based ODS (Oxide Dispersive Strengthen) high-temperature alloy sheets were successfully synthesized by EBPVD (Electron Beam Physical Vapor Deposition) technique. The sheets were about 120μm thick, and having a diameter of 1000mm, whose surface roughness was less than 1μm (Ra<1μm). The microstructures were examined by SEM (Scanning Electron Microscope). The grain size was 1-4μm. When the substrate temperature was 600°C, the sheet had sharp irregular polyhedral grain, and when the substrate temperature was 700°C the sheet had quite regular grains. The morphological orientation angle increased with the distance from the center of the sheet. During the first period of deposition, the sheet was growing in a G-L-S mode, which corresponded with the corn-like microstructure in the cross-section. While during the final period, the sheet changed into a G-S growing mode, which corresponded to the smooth columnar microstructure.

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