Doping effect on exciton binding energy in semiconductor quantum well

2017 ◽  
Vol 31 (03) ◽  
pp. 1750004
Author(s):  
Yongkai Li ◽  
Shuangbo Yang
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Doping Concentration ◽  
Binding Energies ◽  
The Self ◽  
Mass Approximation ◽  
Self Consistent ◽  
Semiconductor Quantum Well ◽  
Si Doped

By solving the Schrödinger equation and Poisson’s equation self-consistently, we have calculated the electronic structure for Si-doped GaAs/Al[Formula: see text]Ga[Formula: see text]As quantum well system at [Formula: see text] K in the effective mass approximation. We obtain the self-consistent potentials, eigen-envelope functions and the subband energies for different doping concentrations and for different thicknesses of the doping layer. The binding energies of exciton in GaAs/Al[Formula: see text]Ga[Formula: see text]As quantum wells under different doping conditions are calculated by using a variational method. And the variation of the binding energy with the thickness of the doped layer and the doping concentration is analyzed. It is found that at a given doping concentration, with the increase of thickness of the doping layer, the self-consistent potential becomes wider and more shallow, the binding energy of exciton decreases. At a given thickness of the doping layer, with the increase of the doping concentration, the self-consistent potential becomes narrower and deeper, the binding energy of exciton increases.

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

Luminescence Studies of MBE Grown SI/SIGE Quantum Wells

1993 ◽  
Vol 298 ◽  
Author(s):  
M. Gail ◽  
J. Brunner ◽  
U. Menczigar ◽  
A. Zrenner ◽  
G. Abstreiter
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Elevated Temperatures ◽  
Variational Calculation ◽  
Exciton Binding Energy ◽  
Quantum Well Structures ◽  
Mass Approximation ◽  
Wide Range ◽  
Good Agreement

AbstractWe report on detailed luminescence studies of MBE grown Si/Si1-xGex quantum well structures. Both well width and composition is varied over a wide range. Bandgap photoluminescence is observed for all samples grown at elevated temperatures. The measured bandgap energies are in good agreement with subband calculations based on effective mass approximation and taking into account the segregation of Ge atoms during growth. Diffusion is found to limit quantum well (QW) growth with Ge-contents above 35% at high temperatures. The photoluminescence signals are detected up to about 100K and can be attributed to interband transitions of free excitons. We also present investigations of the exciton binding energy as a function of well width and composition. The observed shift of the exciton binding energy is compared with results of a variational calculation. A distinct onset in photocurrent and electroluminescence up to 200 K are observed in quantum well diodes.

Simultaneous effects of pressure and temperature on excitons in Pöschl–Teller quantum well

2017 ◽  
Vol 31 (08) ◽  
pp. 1750050 ◽  
Author(s):  
A. Anitha ◽  
M. Arulmozhi
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Effective Mass ◽  
Heavy Hole ◽  
Light Hole ◽  
Binding Energies ◽  
Exciton Binding Energy ◽  
Effective Mass Approximation ◽  
Mass Approximation ◽  
Asymmetric Configuration

Binding energies of the heavy hole and light hole exciton in a quantum well with Pöschl–Teller (PT) potential composed of GaAs have been studied variationally within effective mass approximation. The effects of pressure and temperature on exciton binding energy are analyzed individually and also simultaneously for symmetric and asymmetric configuration of the well. The results show that exciton binding energy (i) decreases as the well width increases, (ii) increases with pressure and (iii) decreases with temperature. Simultaneous effects of these perturbations lead to more binding of the exciton. The results are compared with the existing literature.

OMVPE Growth of GalnAs/InP Quantum Well Structures

1987 ◽  
Vol 102 ◽  
Author(s):  
G. B. Stringfellow
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Growth Conditions ◽  
Binding Energies ◽  
Optimum Conditions ◽  
Quantum Well Structures ◽  
Maximum Value

ABSTRACTInP/GalnAs/InP quantum well structures have been grown using atmospheric pressure organometallic vapor phase epitaxy (AP-OMVPE). The optimum conditions for growth of extremely abrupt interfaces were studied. The optimum orientation was exactly (100). The growth had to be interrupted for 40 seconds at the first interface and 2 minutes at the 2nd interface to obtain the most abrupt interfaces. The narrowest photoluminescence half widths were obtained at the lowest values (31) of V/III ratio in the input vapor phase. These growth conditions allow the growth of wells as thin as <10Å with photoluminescence (PL) spectra consisting of doublets or triplets. The extremely narrow peaks correspond to regions of the quantum well differing in thickness by a single monolayer. The energy separations of the neighboring peaks are found to increase with decreasing well width until, at a thickness of approximately 12 Å, the separation begins to decrease rapidly with decreasing well width. The exciton binding energies in the quantum wells have also been measured using thermally modulated PL. The binding energy is found to increase with decreasing well width until a maximum value of approximately 17 meV is measured for a nominal well width of approximately 13 Å. For thinner wells the exciton binding energy is found to decrease with decreasing well width.

EFFECT OF LASER ON THE NONPARABOLICITY OF THE CONDUCTION BAND AND HYDROGENIC IMPURITY STATES IN A SEMICONDUCTOR QUANTUM WELL

2011 ◽  
Vol 25 (13) ◽  
pp. 1785-1790 ◽  
Author(s):  
A. MERWYN JASPER D. REUBEN ◽  
P. NITHIANANTHI ◽  
C. RAJA MOHAN ◽  
K. JAYAKUMAR
Keyword(s):  
Quantum Well ◽  
Conduction Band ◽  
Binding Energies ◽  
Hydrogenic Impurity ◽  
Mass Approximation ◽  
Hydrogenic Donor ◽  
Semiconductor Quantum Well ◽  
Finite Barrier ◽  
Donor States ◽  
Limiting Values

The effect of laser on the nonparabolicity of the conduction band for hydrogenic donor states like 1s, 2s, 2p± and 2p0 in a GaAs/Al x Ga 1-x As quantum well have been computed in a finite barrier model using variational principle in the effective mass approximation. The limiting values of the ground state and few excited state binding energies for a laser dressed-donor have been obtained. The results are presented and discussed.

scholarly journals Positive and Negative Donor Impurity in an InAs/AlAs Quantum Wire

2010 ◽  
Vol 2 (3) ◽  
pp. 433
Author(s):  
N. Arunachalam ◽  
A. J. Peter
Keyword(s):  
Binding Energy ◽  
Quantum Wire ◽  
Optical Transition ◽  
Binding Energies ◽  
Impurity Level ◽  
Wire Radius ◽  
Emission Energy ◽  
Interband Optical Transition ◽  
Mass Approximation ◽  
Charged Donor

Binding energies of positive and negative charged donor impurities in an InAs/AlAs cylindrical quantum wire are investigated. Numerical calculations are performed using the variational procedure within the single band effective mass approximation. We assume that the impurity is located at the axis of the wire. The interband optical transition with and without the exciton is computed as a function of wire radius. The valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. Neutral shallow donors comprise a positively charged donor and a single bound electron. It is observed that (i) negative trions have a higher binding energy than positive trions, (ii) the binding energy of the heavy-hole exciton is much larger than that of the light-hole exciton due to different hole mass values (iii) the exciton binding energy and the interband emission energy are both increased when the radius of the cylindrical quantum wire is decreased and (iv) the effect of exciton influences the interband emission energy. Our results are in good agreement with the recent published results. Keywords: Quantum wire; Impurity level; Binding energy; Excitons. © 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v2i3.4715                 J. Sci. Res. 2 (3), 433-441 (2010)  

BARRIER THICKNESS DEPENDENCE OF OPTICAL ABSORPTION OF EXCITONS IN GaAs COUPLED QUANTUM WIRE

2004 ◽  
Vol 11 (01) ◽  
pp. 49-55 ◽  
Author(s):  
E. KASAPOGLU ◽  
M. GUNES ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Quantum Wire ◽  
Variational Approach ◽  
Quantum Wires ◽  
Binding Energies ◽  
Barrier Thickness ◽  
Mass Approximation ◽  
Quantum Well Wires ◽  
Coupled Quantum Well

We have calculated the binding energy of excitons, and the interband optical absorption in rectangular coupled quantum-well wires of GaAs surrounded by Ga 1-x Al x As in effective-mass approximation, using the variational approach. Results obtained show that the exciton binding energies and optical absorption depend on the sizes of the wire and barrier thickness. To the best of our knowledge the exciton binding energy and interband optical absorption in the rectangular coupled quantum wires have not been clarified yet.

Sign in / Sign up

Export Citation Format

Share Document