On electrical and interfacial properties of iron and platinum Schottky barrier diodes on (111) n-type Si0.65Ge0.35

Current–voltage (I–V), capacitance–voltage–frequency (C–V–f) and conductance–voltage–frequency (G/[Formula: see text]–V–f) characteristics of Molecular Beam Epitaxy (MBE)-deposited Fe/n-Si[Formula: see text]Ge[Formula: see text] (FM1) and Pt/[Formula: see text]-Si[Formula: see text]Ge[Formula: see text](PM2) (111) orientated Schottky barrier diodes (SBDs) have been investigated at room-temperature. Barrier height ([Formula: see text]), ideality factor (n) and series resistance (R[Formula: see text]) were extracted. Dominant current conduction mechanisms were determined. They revealed that Poole–Frenkel-type conduction mechanism dominated reverse current. Differences in shunt resistance confirmed the difference found in leakage current. Under forward bias, quasi-ohmic conduction is found at low voltage regions and space charge-limited conduction (SCLC) at higher voltage regions for both SBDs. Density of interface states (N[Formula: see text]) indicated a difference in interface reactivity. Distribution profiles of series resistance (R[Formula: see text]) with bias gives a peak in depletion region at low-frequencies that disappears with increasing frequencies. These results show that interface states density and series resistance of Schottky diodes are important parameters that strongly influence electrical properties of FM1 and PM2 structures.

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AN ASSESSMENT ON ELECTRICAL CHARACTERIZATION OF Ni/n-Si SCHOTTKY RECTIFIERS WITH AND WITHOUT Ta2O5 INTERFACIAL OXIDE LAYER

Surface Review and Letters ◽

10.1142/s0218625x19500732 ◽

2019 ◽

Vol 26 (10) ◽

pp. 1950073 ◽

Cited By ~ 2

Author(s):

N. NANDA KUMAR REDDY ◽

P. ANANDA ◽

V. K. VERMA ◽

K. RAHIM BAKASH

Keyword(s):

Schottky Barrier ◽

Oxide Layer ◽

Barrier Height ◽

Series Resistance ◽

Schottky Diodes ◽

Forward Bias ◽

Thermionic Emission ◽

Mis Structure ◽

Schottky Barrier Diodes ◽

Mis Structures

We have fabricated Ni/[Formula: see text]-Si metal–semiconductor (MS) and Ni/Ta2O5/[Formula: see text]-Si metal-insulator–semiconductor (MIS) Schottky barrier diodes at room temperature and studied their current density–voltage (J–V) and capacitance–voltage (C–V) characteristic properties. The forward bias J–V characteristics of the fabricated MS and MIS devices have been evaluated with the help of the thermionic emission (TE) mechanism. Schottky barrier height (SBH) values of 0.73 and 0.84[Formula: see text]eV and ideality factor values of 1.75 and 1.46 are extracted using J–V measurements for MS and MIS Schottky barrier diodes without and with Ta2O5 interfacial oxide layer, respectively. It was noted that the incorporation of Ta2O5 interfacial oxide layer enhanced the value of SBH for the MIS device because this oxide layer produced the substantial barrier between Ni and [Formula: see text]-Si and this obtained barrier height value is better than the conventional metal/[Formula: see text]-Si (MS) Schottky diodes. The rectification ratio (RR) calculated at [Formula: see text][Formula: see text]V for the MS structure is found to be [Formula: see text] and the MIS structure is found to be [Formula: see text]. Using Chung’s method, the series resistance ([Formula: see text]) values are calculated using [Formula: see text]/[Formula: see text] vs I plot and are found to be 21,603[Formula: see text][Formula: see text] for the Ni/[Formula: see text]-Si (MS) and 5489[Formula: see text][Formula: see text] for the Ni/Ta2O5/[Formula: see text]-Si (MIS) structures, respectively. In addition, [Formula: see text] vs [Formula: see text] plot has been utilized to evaluate the series resistance ([Formula: see text]) values and are found to be 14,064[Formula: see text][Formula: see text] for the Ni/[Formula: see text]-Si (MS) and 2236[Formula: see text][Formula: see text] for the Ni/Ta2O5/[Formula: see text]-Si (MIS) structures, respectively. In conclusion, by analyzing the experimental results, it is confirmed that the good quality performance is observed in Ni/Ta2O5/[Formula: see text]-Si (MIS) type SBD when compared to Ni/[Formula: see text]-Si (MS) type SBD and can be accredited to the intentionally formed thin Ta2O5 interfacial oxide layer between Nickel and [Formula: see text]-type Si.

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Effect of series resistance and interface states on the I–V, C–V and G/ω–V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature

Current Applied Physics ◽

10.1016/j.cap.2011.06.016 ◽

2012 ◽

Vol 12 (1) ◽

pp. 266-272 ◽

Cited By ~ 64

Author(s):

S. Demirezen ◽

Z. Sönmez ◽

U. Aydemir ◽

Ş. Altındal

Keyword(s):

Polyvinyl Alcohol ◽

Schottky Barrier ◽

Room Temperature ◽

Series Resistance ◽

Interface States ◽

Schottky Barrier Diodes

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The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2010.04.210 ◽

2010 ◽

Vol 503 (1) ◽

pp. 96-102 ◽

Cited By ~ 40

Author(s):

H. Uslu ◽

Ş. Altındal ◽

U. Aydemir ◽

İ. Dökme ◽

İ.M. Afandiyeva

Keyword(s):

Schottky Barrier ◽

Reverse Bias ◽

Series Resistance ◽

Interface States ◽

Schottky Barrier Diodes

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The effect of series resistance and interface states on the frequency dependent C–V and G/w–V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes

Current Applied Physics ◽

10.1016/j.cap.2013.03.014 ◽

2013 ◽

Vol 13 (7) ◽

pp. 1225-1230 ◽

Cited By ~ 43

Author(s):

S. Zeyrek ◽

E. Acaroğlu ◽

Ş. Altındal ◽

S. Birdoğan ◽

M.M. Bülbül

Keyword(s):

Schottky Barrier ◽

Series Resistance ◽

Interface States ◽

Schottky Barrier Diodes ◽

Frequency Dependent

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Statistical Analysis of the Current–Voltage (I–V) and Capacitance–Voltage (C–V) Characteristics of the Au/Ir/n-InGaN Schottky Barrier Diodes

Advanced Science Letters ◽

10.1166/asl.2018.12154 ◽

2018 ◽

Vol 24 (8) ◽

pp. 5582-5586

Author(s):

R Padma ◽

V. Rajagopal Reddy

Keyword(s):

Schottky Barrier ◽

Ideality Factor ◽

Series Resistance ◽

Electron Beam Evaporation ◽

Statistical Distribution ◽

Schottky Barrier Diodes ◽

Shunt Resistance ◽

Current Voltage ◽

Capacitance Voltage ◽

The Mean

In the present work, 20 Au/Ir/n-InGaN Schottky barrier diodes (SBDs) are fabricated using a electron beam evaporation technique. The Schottky barrier parameters such as ideality factor (n), Schottky barrier height (SBH) (Φb) and donar concentration (Nd) values are determined by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. From I–V measurements, the statistical distribution of data gives the mean SBH value of 0.70 eV with a normal deviation of 10 meV and mean ideality factor value of 1.50 with a normal deviation of 0.0478. Two important parameters such as series resistance (RS) and shunt resistance (RSh) are also evaluated from the I–V characteristics. Furthermore, Norde and Cheung’s methods are used to evaluate the SBH, ideality factor and series resistance. The statistical distribution of C–V data gives the mean SBH value of 0.91 eV with a normal deviation of 12 meV and mean donar concentration of 0.71 × 1017 cm−3, with a normal deviation of 0.018 × 1017 cm−3 respectively.

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Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2018.08.019 ◽

2019 ◽

Vol 89 ◽

pp. 26-31 ◽

Cited By ~ 17

Author(s):

Ç.Ş. Güçlü ◽

A.F. Özdemir ◽

A. Karabulut ◽

A. Kökce ◽

Ş. Altındal

Keyword(s):

Schottky Barrier ◽

Forward Bias ◽

Negative Capacitance ◽

Schottky Barrier Diodes ◽

Temperature Dependent

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High Temperature capable SiC Schottky diodes, based on buried grid design.

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/hitec-tp11 ◽

2014 ◽

Vol 2014 (HITEC) ◽

pp. 000058-000060

Author(s):

Tomas Hjort ◽

Adolf Schöner ◽

Andy Zhang ◽

Mietek Bakowski ◽

Jang-Kwon Lim ◽

...

Keyword(s):

High Temperature ◽

Schottky Barrier ◽

Leakage Current ◽

Schottky Diode ◽

Schottky Diodes ◽

Electrical Characteristics ◽

Schottky Barrier Diodes ◽

Grid Design ◽

High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

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