DISCRETIZATION METHOD OF HYDRODYNAMIC EQUATIONS FOR SIMULATION OF GaN MESFETs
A finite discretization method in two dimensions has been developed and used to model electron transport in wurtzite phase GaN MESFETs. The model is based on the solutions of the highly-coupled nonlinear hydrodynamic partial differential equations. These solutions allow us to calculate the electron drift velocity and other device parameters as a function of the applied electric field. This model is able to describe inertia effects which play an increasing role in different fields of micro and optoelectronics where simplified charge transport models like drift-diffusion model and energy balance model are no longer applicable. Results of numerical simulations are shown for a two-dimensional GaN MESFET device which are in fair agreement with other theoretical or experimental methods.