Effects of ionized impurity and interface roughness scatterings on the electron mobility in InAs/GaSb type II superlattices at low temperatures

2016 ◽  
Vol 30 (32n33) ◽  
pp. 1650384
Author(s):  
S. Safa ◽  
A. Asgari
Keyword(s):  
Electron Mobility ◽  
Low Temperatures ◽  
Structural Parameters ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Type Ii ◽  
Type Ii Superlattices ◽  
Interface Roughness Scattering ◽  
Different Temperatures ◽  
Scattering Rates

The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices (SLs) at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting the electron transport at low temperatures. For this purpose, the band structures and wave functions of electrons in such SLs are calculated by solving the K.P Hamiltonian using the numerical Finite Difference method. The scattering rates have been obtained for different temperatures and structural parameters. We show that the scattering rates are high in thin-layer SLs and the mobility rises as the temperature increases in low-temperature regime.

Interface roughness scattering in type II broken-gap GaInAsSb/InAs single heterostructures

2007 ◽  
Vol 102 (11) ◽  
pp. 113710 ◽  
Author(s):  
M. P. Mikhailova ◽  
K. D. Moiseev ◽  
T. I. Voronina ◽  
T. S. Lagunova ◽  
Yu. P. Yakovlev
Keyword(s):  
Interface Roughness ◽  
Type Ii ◽  
Interface Roughness Scattering ◽  
Broken Gap

Interface roughness scattering-limited electron mobility in AlAs/GaAs and Ga0.5In0.5P/GaAs wells

1999 ◽  
Vol 86 (1) ◽  
pp. 459-463 ◽  
Author(s):  
B. R. Nag ◽  
Sanghamitra Mukhopadhyay ◽  
Madhumita Das
Keyword(s):  
Electron Mobility ◽  
Interface Roughness ◽  
Interface Roughness Scattering

THE MONTE CARLO METHOD APPLIED TO CARRIER TRANSPORT IN Si/SiGe QUANTUM WELLS

2005 ◽  
Vol 19 (21) ◽  
pp. 3353-3377 ◽  
Author(s):  
V. A. VETTCHINKINA ◽  
A. BLOM ◽  
M. A. ODNOBLYUDOV
Keyword(s):  
Monte Carlo ◽  
Quantum Wells ◽  
Electric Fields ◽  
Carrier Transport ◽  
Impurity Scattering ◽  
Resonant Scattering ◽  
Interface Roughness ◽  
The Monte Carlo Method ◽  
Analytic Expressions ◽  
Different Temperatures

We present a complete Monte Carlo simulation of the transport properties of a Si/SiGe quantum well. The scattering mechanisms, viz. intervalley phonons, acoustic phonons, interface roughness and impurity scattering (including resonant scattering), are considered in detail, and we derive analytic expressions for the scattering rates, in each case properly taking the quantized electron wave functions into account. The numerically obtained distribution function is used to discuss the influence of each scattering mechanism for different electric fields applied parallel to the interfaces and also different temperatures.

MAGNETORESISTANCE OF A SILICON MOSFET ON THE (111) SURFACE IN A PARALLEL MAGNETIC FIELD

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1529-1534 ◽  
Author(s):  
A. GOLD ◽  
O. ANTONIE
Keyword(s):  
Magnetic Field ◽  
Electron Gas ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Zero Temperature ◽  
Parallel Magnetic Field ◽  
Interface Roughness Scattering ◽  
Dimensional Electron Gas ◽  
Passivated Silicon ◽  
Theoretical Results

In comparison with silicon (100) we argue that the silicon (111) surface is a surface with higher mobility and stronger Coulomb interaction effects. For the resistance of the two-dimensional electron gas we discuss the effects of a magnetic field parallel to the surface: for zero temperature we present theoretical results for the magnetoresistance of an electron gas at the surface of silicon (111) with a six-fold valley degeneracy. Impurity scattering and interface roughness scattering are taken into account. A recent study of a hydrogen-passivated silicon (111) surface showed a mobility proportional to the electron density. We present, using a model for neutral impurities, predictions for the magnetoresistance of this sample in a parallel magnetic field.

scholarly journals Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures containing quantum wells

Open Physics ◽  
2008 ◽  
Vol 6 (3) ◽  
Author(s):  
Safi Altunöz ◽  
Hüseyin Çelik ◽  
Mehmet Cankurtaran
Keyword(s):  
Quantum Wells ◽  
Applied Voltage ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Vertical Transport ◽  
Interface Roughness ◽  
Polar Optical Phonon ◽  
Optical Phonon Scattering ◽  
Interface Roughness Scattering ◽  
The Difference

AbstractThe mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures was investigated using geometric magnetoresistance measurements in the dark. The samples studied had Ga1−y AlyAs (0 ≤ y ≤ 0:26) linearly graded barriers between the n+-GaAs contacts and the Ga0:74Al0:26As central barrier, which contain N w (=0, 2, 4, 7 and 10) n-doped GaAs quantum wells. The mobility was determined as functions of (i) temperature (80–290 K) at low applied voltage (0.01–0.1 V) and (ii) applied voltage (0.005–1.6 V) at selected temperatures in the range 3.5–290 K. The experimental results for the temperature dependence of low-field mobility suggest that space-charge scattering is dominant in the samples with N w=0 and 2, whereas ionized impurity scattering is dominant in the samples with N w=4, 7 and 10. The effect of polar optical phonon scattering on the mobility becomes significant in all barrier structures at temperatures above about 200 K. The difference between the measured mobility and the calculated total mobility in the samples with N w=4, 7 and 10, observed above 200 K, is attributed to the reflection of electrons from well-barrier interfaces in the quantum wells and interface roughness scattering. The rapid decrease of mobility with applied voltage at high voltages is explained by intervalley scattering of hot electrons.

scholarly journals Evidence of Intersubband Linewidth Narrowing Using Growth Interruption Technique

Photonics ◽  
2019 ◽  
Vol 6 (2) ◽  
pp. 38 ◽  
Author(s):  
Ngoc Tran ◽  
Giorgio Biasiol ◽  
Arnaud Jollivet ◽  
Alberto Bertocci ◽  
François Julien ◽  
...  
Keyword(s):  
Impurity Scattering ◽  
Undoped Sample ◽  
Interface Roughness ◽  
Threshold Intensity ◽  
Scattering Mechanism ◽  
Intersubband Transitions ◽  
Growth Interruption ◽  
Ionized Impurity Scattering ◽  
Interface Roughness Scattering ◽  
Coherent Emission

We report on the systematic study of two main scattering mechanisms on intersubband transitions, namely ionized impurity scattering and interface roughness scattering. The former mechanism has been investigated as a function of the dopants position within a multiple GaAs/AlGaAs quantum well structure and compared to the transition of an undoped sample. The study on the latter scattering mechanism has been conducted using the growth interruption technique. We report an improvement of the intersubband (ISB) transition linewidth up to 11% by interrupting growth at GaAs-on-AlGaAs interfaces. As a result, the lifetime of intersubband polaritons could be improved up to 9%. This leads to a reduction of 17% of the theoretical threshold intensity for polaritonic coherent emission. This work brings a useful contribution towards the realization of polariton-based devices.

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