Low Frequency Noise Behavior in Semiconductors

1997 ◽  
Vol 11 (20) ◽  
pp. 899-907
Author(s):  
S. V. Melkonyan ◽  
F. V. Gasparyan ◽  
V. M. Aroutiunyan
Keyword(s):  
Spectral Density ◽  
Characteristic Frequency ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Low Frequencies ◽  
Frequency Behavior

The low frequency behavior of the generation-recombination noise in the homogeneous semiconductors is investigated. The form of Lorentz law for spectral density of noise at low frequencies is made more precise. It is shown that at superlow frequencies the spectrum of generation-recombination noise changes into the 1/f-law. The characteristic frequency of this change depends on the temperature and dimensions of the sample.

Low Frequency Noise Annoyance Assessment by Low Frequency Noise Rating (LFNR) Curves

1983 ◽  
Vol 2 (1) ◽  
pp. 20-28 ◽  
Author(s):  
N. Broner ◽  
H.G. Leventhall
Keyword(s):  
Laboratory Experiments ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Low Frequencies ◽  
Noise Annoyance

Over recent years, it has become apparent that low frequency noise annoyance is more widespread than originally believed. Annoyance has occurred where the emitted noise is unbalanced towards the low frequencies even though the dB(A) level has been low. Following laboratory experiments carried out as part of an investigation into low frequency annoyance, combined with field annoyance data, the Low Frequency Noise Rating (LFNR) curves are proposed for the assessment of low frequency noise annoyance complaints.

scholarly journals Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs

2017 ◽  
Vol 12 (2) ◽  
pp. 62-70
Author(s):  
Rafael Assalti ◽  
Rodrigo T. Doria ◽  
Denis Flandre ◽  
Michelly De Souza
Keyword(s):  
Spectral Density ◽  
Gate Voltage ◽  
Low Frequency ◽  
Drain Current ◽  
Current Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Fully Depleted ◽  
Self Cascode

In this paper the origin of low-frequency noise in the Asymmetric Self-Cascode (A-SC) structure composed by Fully Depleted SOI nMOSFETs is investigated through experimental results. It is shown that the predominant noise source of the A-SC structure is linked to carrier number fluctuations, being governed by the noise generated in the transistor near the source. Larger channel doping concentrations degrade the quality of the Si-SiO2 interface and the gate oxide, which causes an increase of the normalized drain current noise spectral density, just as the reduction of the gate voltage overdrive, since there are few carriers in the channel. The A-SC structures have showed higher noise compared with single transistors. In saturation regime, the increase of the gate voltage overdrive has incremented the corner frequency, shifting the g-r noise to higher frequencies. Besides that, the normalized noise has been significantly increased when compared with the linear regime due to the rise of the drain current noise spectral density.

scholarly journals Factors influencing low-frequency noise reduction in typical Chinese dwelling layouts

2020 ◽  
pp. 146134842094297
Author(s):  
Yang Song ◽  
Jian Kang
Keyword(s):  
Noise Reduction ◽  
Noise Exposure ◽  
Noise Source ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Low Frequencies ◽  
Factors Influencing ◽  
Polyline Distance

Existing approaches to reducing the low-frequency noise exposure of dwellings are not always sufficient. This study investigated the significance of dwelling layout design for low-frequency noise control. The sound distribution in six typical Chinese dwelling layouts was analysed using in-situ measurements under steady-state noise of various low frequencies. The results showed that among two-bedroom dwelling layouts, the overall average noise reduction varied considerably (6 dB). The noise reduction for room levels (number of rooms sound crosses) 1–2 and 2–3 varies by 5 and 3 dB, respectively, and the noise reduction at door openings varies by 5 dB. A model to approximate the low-frequency noise reduction of a layout was developed using the polyline distance from the noise source and the number of walls the polyline has to cross, which were clearly shown to influence low-frequency noise reduction and seem to be the strongest investigated factors.

Attenuation of Earmuffs against Low Frequency Noise

1987 ◽  
Vol 6 (4) ◽  
pp. 167-174 ◽  
Author(s):  
Jukka Starck ◽  
Jussi Pekkarinen ◽  
Seppo Aatola
Keyword(s):  
Low Frequency ◽  
Peak Level ◽  
Standard Test ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Low Frequencies ◽  
Hearing Protectors ◽  
Noise Measurements ◽  
Attenuation Values ◽  
Very High

The standard test for hearing protectors cannot be applied to determine the attenuation values for low frequency noise or for noise consisting of high intensity impulses. Moreover, the aging of earmuffs and the use of spectacles may cause leakage which decreases attenuation mainly at low frequencies. To study the real attenuation of earmuffs, noise measurements were taken outside and inside the earmuffs of workers at industrial work places, and of military conscripts when shooting with different firearms. The effect of spectacles on the attenuation was measured under laboratory conditions. In industrial workplaces the average attenuation was 4 dB in the 63 and 125 Hz octave bands. For shooting noise the attenuation was found to be good for small calibre weapons but poor for large calibre weapons, which generate very high peak level impulses at low frequencies. Spectacles decreased earmuff attenuation by 9–11 dB.

1/f NOISES OF HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS

2000 ◽  
Vol 14 (07) ◽  
pp. 751-760 ◽  
Author(s):  
F. V. GASPARYAN ◽  
S. V. MELKONYAN ◽  
V. M. AROUTIOUNYAN ◽  
H. V. ASRIYAN
Keyword(s):  
Experimental Data ◽  
Spectral Density ◽  
Temperature Dependence ◽  
Conduction Electron ◽  
Optical Phonon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Analytical Expressions

The low-frequency noise spectral density with the 1/f spectrum for homopolar and heteropolar semi-conductors is theoretically obtained taking into account conduction electron–optical phonon interactions. The analytical expressions of the spectral density and Hooge's α H parameter are presented. The analytical temperature dependence of Hooge's parameter is compared with experimental data for n-Si and n-GaAs.

scholarly journals Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes

Materials ◽  
2019 ◽  
Vol 12 (4) ◽  
pp. 673 ◽  
Author(s):  
Justinas Glemža ◽  
Vilius Palenskis ◽  
Andrejus Geižutis ◽  
Bronislovas Čechavičius ◽  
Renata Butkutė ◽  
...  
Keyword(s):  
Spectral Density ◽  
Laser Diodes ◽  
Low Frequency ◽  
Electrical Noise ◽  
Frequency Noise ◽  
Type I ◽  
Material System ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Forward Current

GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources should be clarified. A detailed study of near-infrared 1.09 μm wavelength GaAsBi type-I laser diodes using the low-frequency noise spectroscopy in a temperature range of (180–300) K is presented. Different types of voltage fluctuation spectral density dependencies on the forward current far below the lasing threshold have been observed. According to this, investigated samples have been classified into two groups and two equivalent noise circuits with the corresponding voltage noise sources are presented. Calculations on the voltage spectral density of the electrical noise and current-voltage characteristic approximations have been performed and the results are consistent with the experimental data. The analysis showed that one group of LDs is characterized by 1/fα-type electrical fluctuations with one steep electrical bump in the electrical noise dependence on forward current, and the origin of these fluctuations is the surface leakage channel. The LDs of the other group have two bumps in the electrical noise dependence on current where the first bump is determined by overall LD defectiveness and the second bump by Bi-related defects in the active area of LD with characteristic Lorentzian-type fluctuations having the activation energy of (0.16–0.18) eV.

Low-frequency noise correlations in lateral pnp bipolar transistors

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1112-1117
Author(s):  
A. Nathan ◽  
E. Charbon ◽  
W. Kung ◽  
A. Salim
Keyword(s):  
Integrated Circuit ◽  
Low Frequency ◽  
Intrinsic Noise ◽  
Low Noise ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Low Noise Amplifiers ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Low Frequencies

Measurement results of low-frequency noise behaviour, and in particular, the noise correlations in lateral pnp bipolar transistors are presented for various bias conditions in both forward active and saturation regimes. The correlation in output collector noise is very high with a value close to unity only when the device is in medium injection. At extremely high injection, the degree of coherence degrades, depicting a behaviour similar to the forward current gain of the device. This degradation can be attributed to emitter-crowding effects. The correlation in output noise can be exploited to drastically suppress the intrinsic noise, particularly at low frequencies, making such devices useful for the input stage of amplifiers; the first step towards realisation of ultra low-noise amplifiers in standard integrated circuit technology.

Noise induced hearing loss in low frequencies in employees in a hospital microbiology department

2021 ◽  
Vol 7 (5) ◽  
pp. 861
Author(s):  
Konstantina Chrysouli ◽  
Dimitrios Kikidis
Keyword(s):  
Hearing Loss ◽  
Low Frequency ◽  
Control Group ◽  
Frequency Noise ◽  
Noise Induced Hearing Loss ◽  
Low Frequency Noise ◽  
Low Frequencies ◽  
History Of ◽  
Laboratory Workers ◽  
The Impact

<p class="abstract">Noise induced hearing loss (NIHL) is regarded as a serious problem and one of the most recorded occupational disorders in Europe and in the rest of the world and amounts to between 7% and 21% of the hearing loss. Aim of this study is to explore the development and the prevalence of low frequency noise-induced hearing loss (NIHL) in a hospital, especially in microbiology laboratory workers. Generally it is known that 4 KHz is the main NIHL frequency. Despite current theories, our study suggests for the first time the impact of low frequency noise in hearing loss among laboratory workers. According to the results, the population examined, namely the employees at the Microbiology Department of the Hospital, showed lower hearing levels compared to the control group, who had no history of occupational exposure to noise. There are many other studies which suggest that prolonged exposures to high noise levels have negative physiological and psychological effects on workers. The finding of the correlation of noise frequency with the frequency of the generated hearing loss is involved in the controversy about the pathophysiology of noise effect.</p>

Sign in / Sign up

Export Citation Format

Share Document