A NEW FRACTAL DESIGN OF POROUS AlN/BN/SiOC COMPOSITES WITH LOW-k AND HIGH THERMAL CONDUCTIVITY

Fractals ◽  
2019 ◽  
Vol 27 (07) ◽  
pp. 1950124
Author(s):  
XIJIE DONG ◽  
YIFAN HU ◽  
MEIJUAN YUAN ◽  
JUN ZHAO ◽  
LING CHEN
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Constant ◽  
Effective Medium Theory ◽  
Fractal Theory ◽  
Dielectric Constants ◽  
High Thermal Conductivity ◽  
Low Dielectric Constant ◽  
Medium Theory ◽  
Low Dielectric ◽  
Low K

In this work, we propose a new model for the dielectric constant and thermal conductivity, and apply it to the design of composites with low dielectric constant and high thermal conductivity based on fractal theory and effective medium theory. In particular, we use this model to prepare porous AlN/BN/SiOC composites with low dielectric constant and high thermal conductivity in different component fractions. We successfully synthesize ceramic samples with low dielectric constants [Formula: see text] and high thermal conductivity ([Formula: see text]). These results indicate that the proposed fractal design is valid.

Revealing crystal structures and relative dielectric constants of fluorinated silicon oxides

2021 ◽  
Author(s):  
Pengyan Xue ◽  
Junwei Feng ◽  
Congwei Xie ◽  
Lan Wang ◽  
Abudukadi Tudi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Crystal Structures ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silicon Oxides ◽  
Low Dielectric ◽  
Materials Used ◽  
Low K

Low dielectric constant (low-k) fluorinated silica is one of the most important materials used in ultralarge scale integrated circuits (ULSIs); however, it is remains unclear what the minimum k possible...

Composites for Electronic Substrate Applications

1987 ◽  
Vol 108 ◽  
Author(s):  
R. Gerhardt
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Constant ◽  
Thermal Expansion ◽  
Experimental Evidence ◽  
Single Phase ◽  
High Thermal Conductivity ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Composite Approach ◽  
Electronic Substrates

ABSTRACTThe need for low dielectric constant, high thermal conductivity, matched thermal expansion and co-processability in electronic substrates is reviewed. Since no single phase material is able to satisfy all the requirements, a microscopic composite approach is proposed. Recent experimental evidence supporting the concept is also presented.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

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